arXiv subjects

Iman Santosa

Publications and source records attributed to Iman Santosa.

3 recordsLinked to original sources

arXiv2018

Strong Rashba effect in the localized impurity states of halogen-doped monolayer PtSe2

The recent epitaxial growth of 1T-phase of PtSe2 monolayer (ML) has opened a possibility for its novel applications, in particular for spintronics device. However, in contrast to 2H-phase of transition-metal dichalcogenides (TMDs), the absence of spin splitting in the PtSe2 ML may limit the functionality for spintronics application. Through fully-relativistic density-functional theory calculations, we show that large spin splitting can be induced in the PtSe2 ML by introducing a substitutional halogen impurity. Depending on the atomic number (Z) of the halogen dopants, we observe an enhancement of the spin splitting in the localized impurity states (LIS), which is due to the increased contribution of the p-d orbitals coupling. More importantly, we identify very large Rashba splitting in the LIS near Fermi level around the Gamma point characterized by hexagonal warping of the Fermi surface. We show that the Rashba splitting can be controlled by adjusting the doping concentration. Therefore, this work paves a possible way to induce the significant Rashba splitting in the two-dimensional TMDs, which is useful for spintronic devices operating at room temperature.

cond-mat.str-el↗

arXiv2017

Defect-induced large spin-orbit splitting in the monolayer of PtSe$_2$

The effect of spin-orbit coupling (SOC) on the electronic properties of monolayer (ML) PtSe$_2$ is dictated by the presence of the crystal inversion symmetry to exhibit spin polarized band without characteristic of spin splitting. Through fully-relativistic density-functional theory calculations, we show that large spin-orbit splitting can be induced by introducing point defects. We calculate stability of native point defects such as a Se vacancy (V$_{\texttt{Se}}$), a Se interstitial (Se$_{i}$), a Pt vacancy (V$_{\texttt{Pt}}$), and a Pt interstitial (Pt$_{i}$), and find that both the V$_{\texttt{Se}}$ and Se$_{i}$ have the lowest formation energy. We also find that in contrast to the Se$_{i}$ case exhibiting spin degeneracy in the defect states, the large spin-orbit splitting up to 152 meV is observed in the defect states of the V$_{\texttt{Se}}$. Our analyses of orbital contributions to the defect states show that the large spin splitting is originated from the strong hybridization between Pt-$d_{x{^2}+y{^2}}+d_{xy}$ and Se-$p_{x}+p_{y}$ orbitals. Our study clarifies that the defects play an important role in the spin splitting properties of the PtSe$_2$ ML, which is important for designing future spintronic devices.

cond-mat.str-el↗

arXiv2017

Polarity tuning of spin-orbit-induced spin splitting in two-dimensional transition metal dichalcogenides semiconductors

The established spin splitting in monolayer (ML) of transition metal dichalcogenides (TMDs) that is caused by inversion symmetry breaking is dictated by mirror symmetry operations to exhibit fully out-of-plane direction of spin polarization. Through first-principles density functional theory calculations, we show that polarity-induced mirror symmetry breaking leads to new sizable spin splitting having in-plane spin polarization. These splittings are effectively controlled by tuning the polarity using biaxial strain. Furthermore, the admixtures of the out-of-plane and in-plane spin-polarized states in the strained polar systems are identified, which is expected to influence the spin relaxation through the Dyakonov-Perel mechanism. Our study clarified that the polarity-induced mirror symmetry breaking plays an important role in controlling the spin splitting and spin relaxation in the TMDs ML, which is useful for designing future spintronic devices.

cond-mat.str-el↗