arXiv subjects

Iman Santoso

Publications and source records attributed to Iman Santoso.

12 recordsLinked to original sources

arXiv2025

Anisotropic spin-split states with canted persistent spin textures in two-dimensional Janus $1T^{'}$ $MXX'$ ($M$ = Mo, W; $X\neq X'$= S, Se, Te) controlled by surface alloying

Two-dimensional tungsten-based transition metal dichalcogenides (TMDCs), $MX_{2}$ ($M$: W, Mo; $X$: S, Se, Te) monolayers (MLs) with a $1T'$ structure, serve as significant-gap quantum spin Hall insulators. However, due to the centrosymmetric nature of these crystals, spin degeneracy persists throughout their electronic band structures, limiting their potential for spintronic applications. By modifying the chalcogen ($X$) atoms in the TMDCs ML surface to create a higly stable Janus $MXX'$ MLs structure, we demonstrate through density-functional theory calculations that substantial spin splitting of the electronic states can be achieved. Taking the Janus $1T'$ WSTe ML as a representative case, we identify pronounced anisotropic spin-splitting bands, with maximum spin splittings of 0.14 eV and 0.10 eV occurring at the highest occupied states and lowest unoccupied states, respectively. These significant band splittings give rise to canted persistent spin textures (PST) in the spin polarization, which differ significantly from those in commonly studied PST materials. We demonstrate that this intricate spin splitting and unique spin textures stem from strong in-plane $p-d$ orbital interactions between tungsten (W) and the chalcogen atoms (Te and Se), driven by the reduced symmetry of the crystal's point group. Further analysis using a $\vec{k}\cdot\vec{p}$ model derived from symmetry considerations corroborates the origins of the observed anisotropic spin splitting and canted PST. the spin-split states are highly sensitive to surface imperfections caused by surface alloying effects, such as variations in the chalcogen composition on the monolayer surface. These findings underscore the potential of Janus $1T'$ $MXX'$ MLs as promising candidates for next-generation spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Strong unidirectional Rashba state induced by extended vacancy line defects in a $1T'$-WTe$_{2}$ monolayer

The correlation between spin-orbit coupling and low crystal symmetry in the $1T'$ phase of the tungsten ditellurides (WTe$_{2}$) monolayer (ML) plays a significant role in its electronic and topological properties. However, the centrosymmetric nature of the crystal maintains Kramer's spin degeneracy in its electronic states, which limits its functionality in spintronics. In this paper, through a systematic study using first-principles calculations, we show that significant spin splitting can be induced in the $1T'$-WTe$_{2}$ ML by introducing one dimensional (1D) vacancy line defect (VLD). We examine six configurations of the 1D VLD, which consist of three VLDs extended in the armchair direction including a Te$_{1}$ armchair-VLD ($ACV_{\texttt{Te}_{1}}$), Te$_{2}$ armchair-VLD ($ACV_{\texttt{Te}_{2}}$), and W armchair-VLD ($ACV_{\texttt{W}}$); and three VLDs elongated along the zigzag direction comprising a Te$_{1}$ zigzag-VLD ($ZZV_{\texttt{Te}_{1}}$), Te$_{2}$ zigzag-VLD ($ZZV_{\texttt{Te}_{2}}$), and W zigzag-VLD ($ZZV_{\texttt{W}}$), where Te$_{1}$ and Te$_{2}$ are two nonequivalent Te atoms located at the lower and higher sites in the top layer, respectively. We find that both the $ACV_{\texttt{Te}_{1}}$ and $ACV_{\texttt{W}}$ systems have the lowest formation energy. Concerning these two most stable VLD systems, we identify large spin splitting in the defect states near the Fermi level driven by a strong coupling of the in-plane $p-d$ orbitals, displaying highly unidirectional Rashba states with perfectly collinear spin configurations in the momentum space. This unique spin configuration gives rise to a specific spin mode that protects the spin from decoherence and leads to an exceptionally long spin lifetime...........

cond-mat.mes-hall↗

arXiv2023

Reversible canted persistent spin textures with large spin splitting in two-dimensional ferroelectric bilayer WTe$_{2}$

The recent discovery of materials hosting persistent spin texture (PST) opens an avenue for the realization of energy-saving spintronics since they support an extraordinarily long spin lifetime. However, the stability of the PST is sensitively affected by symmetry breaking of the crystal induced by external perturbation such as the electric field. In this paper, through first-principles calculations supplemented by symmetry analysis, we report the emergence of the robust and stable PST with large spin splitting in the two-dimensional ferroelectric bilayer WTe$_{2}$. Due to the low symmetry of the crystal ($C_{s}$ point group), we observe a canted PST in the spin-split bands around the Fermi level displaying a unidirectional spin configuration tilted along the $yz$ plane in the first Brillouin zone. Such a typical PST can be effectively reversed by out-of-plane ferroelectric switching induced by interlayer sliding along the in-plane direction. We further demonstrated that the reversible PST is realized by the application of an out-of-plane external electric field. Thus, our findings uncover the possibility of an electrically tunable PST in the 2D materials, offering a promising platform for highly efficient spintronics devices.

cond-mat.str-el↗

arXiv2022

Full-zone Persistent Spin Textures with Giant Spin Splitting in Two-dimensional Group IV-V Compounds

Persistent spin texture (PST), a property of solid-state materials maintaining unidirectional spin polarization in the momentum $k$-space, offers a route to deliver the necessary long carrier spin lifetimes through the persistent spin helix (PSH) mechanism. However, most of the discovered PST locally occurred in the small part around certain high symmetry $k$-points or lines in the first Brillouin zone (FBZ), thus limiting the stability of the PSH state. Herein, by symmetry analysis and first-principles calculations, we report the emergence of full-zone PST (FZPST), a phenomenon displaying the PST in the whole FBZ, in the two-dimensional group IV-V $A_{2}B_{2}$ ($A$ = Si, Sn, Ge; $B$ = Bi, Sb) compounds. Due to the existence of the in-plane mirror symmetry operation in the wave vector point group symmetry for the arbitrary $\vec{k}$ in the whole FBZ, fully out-of-plane spin polarization is observed in the $k$-space, thus maintaining the FZPST. Importantly, we observed giant spin splitting in which the PST sustains, supporting large SOC parameters and small wavelengths of the PSH states. Our $\vec{k}\cdot\vec{p}$ analysis demonstrated that the FZPST is robust for the non-degenerate bands, which can be effectively controlled by the application of an external electric field, thus offering a promising platform for future spintronic applications.

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arXiv2021

Highly persistent spin textures with giant tunable spin splitting in the two-dimensional germanium monochalcogenides

The ability to control the spin textures in semiconductors is a fundamental step toward novel spintronic devices, while seeking desirable materials exhibiting persistent spin texture (PST) remains a key challenge. The PST is the property of materials preserving a unidirectional spin orientation in the momentum space, which has been predicted to support an extraordinarily long spin lifetime of carriers. Herein, by using first-principles density functional theory calculations, we report the emergence of the PST in the two-dimensional (2D) germanium monochalcogenides (GeMC). By considering two stable formations of the 2D GeMC, namely the pure GeX and Janus Ge2XY monolayers (X, Y = S, Se, and Te), we observed the PST around the valence band maximum where the spin orientation is enforced by the lower point group symmetry of the crystal. In the case of the pure GeX monolayers, we found that the PST is characterized by fully out-of-plane spin orientation protected by C2v point group, while the canted PST in the y-z plane is observed in the case of the Janus Ge2XY monolayers due to the lowering symmetry into Cs point group. More importantly, we find large spin-orbit coupling (SOC) parameter in which the PST sustains, which could be effectively tuned by in-plane strain. The large SOC parameter observed in the present systems leads to the small wavelength of the spatially periodic mode of the spin polarization, which is promising for short spin channel in the spin Hall transistor devices.

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arXiv2020

Spin splitting with persistent spin textures induced by the line defect in 1T-phase of monolayer transition metal dichalcogenides

The spin splitting driven by spin-orbit coupling in monolayer (ML) transition metal dichalcogenides (TMDCs) family has been widely studied only for the 1H-phase structure, while it is not profound for the 1T-phase structure due to the centrosymmetric of the crystal. Based on first-principles calculations, we show that significant spin splitting can be induced in the ML 1T-TMDCs by introducing the line defect. Taking the ML PtSe2 as a representative example, we considered the most stable form of the line defects, namely Se-vacancy line defect (Se-VLD). We find that large spin splitting is observed in the defect states of the Se-VLD, exhibiting a highly unidirectional spin configuration in the momentum space. This peculiar spin configuration may yield the so-called persistent spin textures (PST), a specific spin structure resulting in protection against spin-decoherence and supporting an extraordinarily long spin lifetime. Moreover, by using k.p perturbation theory supplemented with symmetry analysis, we clarified that the emerging of the spin splitting maintaining the PST in the defect states is originated from the inversion symmetry breaking together with one-dimensional nature of the Se-VLD engineered ML PtSe2. Our findings pave a possible way to induce the significant spin splitting in the ML 1T-TMDCs, which could be highly important for designing spintronic devices.

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arXiv2017

Unravelling local spin polarization of Zhang-Rice singlet in lightly hole-doped cuprates using high-energy optical conductivity

Unrevealing local magnetic and electronic correlations in the vicinity of charge carriers is crucial in order to understand rich physical properties in correlated electron systems. Here, using high-energy optical conductivity (up to 35 eV) as a function of temperature and polarization, we observe a surprisingly strong spin polarization of the local spin singlet with enhanced ferromagnetic correlations between Cu spins near the doped holes in lightly hole-doped La$_{1.95}$Sr$_{0.05}$Cu$_{0.95}$Zn$_{0.05}$O$_{4}$. The changes of the local spin polarization manifest strongly in the temperature-dependent optical conductivity at ~7.2 eV, with an anomaly at the magnetic stripe phase (~25 K), accompanied by anomalous spectral-weight transfer in a broad energy range. Supported by theoretical calculations, we also assign high-energy optical transitions and their corresponding temperature dependence, particularly at ~2.5 ~8.7, ~9.7, ~11.3 and ~21.8 eV. Our result shows the importance of a strong mixture of spin singlet and triplet states in hole-doped cuprates and demonstrates a new strategy to probe local magnetic correlations using high- energy optical conductivity in correlated electron systems.

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arXiv2015

Self-consistent iteration procedure in analyzing reflectivity and spectroscopic ellipsometry data of multilayered materials and their interfaces

For multilayered materials, reflectivity depends on the complex dielectric function of all the constituent layers, and a detailed analysis is required to separate them. Furthermore, for some cases, new quantum states can occur at the interface which may change the optical properties of the material. In this paper, we discuss various aspects of such analysis, and present a self-consistent iteration procedure, a versatile method to extract and separate the complex dielectric function of each individual layer of a multilayered system. As a case study, we apply this method to LaAlO$_{3}$/SrTiO$_{3}$ heterostructure in which we are able to separate the effects of the interface from the LaAlO$_{3}$ film and the SrTiO$_{3}$ substrate. Our method can be applied to other complex multilayered systems with various numbers of layers.

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arXiv2014

Optical conductivity renormalization of graphene on SrTiO$_{3}$ due to resonant excitonic effects mediated by Ti 3\textit{d} orbitals

We present evidence of a drastic renormalization of the optical conductivity of graphene on SrTiO$_3$ resulting in almost full transparency in the ultraviolet region. These findings are attributed to resonant excitonic effects further supported by \emph{ab initio} Bethe-Salpeter equation and density functional theory calculations. The ($π$,$π$*)-orbitals of graphene and Ti-3\textit{d} $t_{2g}$ orbitals of SrTiO$_3$ are strongly hybridized and the interactions of electron-hole states residing in those orbitals play dominant role in the graphene optical conductivity. These interactions are present much below the optical band gap of bulk SrTiO$_3$. These results open a possibility of manipulating interaction strengths in graphene via \textit {d}-orbitals which could be crucial for optical applications.

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arXiv2013

Tunable optical absorption and interactions in graphene via oxygen plasma

We report significant changes of optical conductivity in single layer graphene induced by mild oxygen plasma exposure, and explore the interplay between carrier doping, disorder, and many-body interactions from their signatures in the absorption spectrum. The first distinctive effect is the reduction of the excitonic binding energy that can be extracted from the renormalized saddle point resonance at 4.64 eV. Secondly, the real part of the frequency-dependent conductivity is nearly completely suppressed below an exposure-dependent threshold in the near infrared range. The clear step-like suppression follows the Pauli blocking behaviour expected for doped monolayer graphene. The nearly zero residual conductivity at frequencies below 2Ef can be interpreted as arising from the weakening of the electronic self-energy. Our data shows that mild oxygen exposure can be used to controlably dope graphene without introducing the strong physical and chemical changes that are common in other approaches to oxidized graphene, allowing a controllable manipulation of the optical properties of graphene.

cond-mat.mes-hall↗

arXiv2012

Large spectral weight transfer in optical conductivity of SrTiO$_{3}$ induced by intrinsic vacancies

The optical conductivity ($σ_{1}$) of SrTiO$_{3}$ for various vacancies has been systematically studied using a combination of ultraviolet - vacuum ultraviolet (UV-VUV) reflectivity and spectroscopic ellipsometry. For cation (Ti) vacancies, $σ_{1}$ shows large spectral weight transfer over a wide range of energy from as high as 35 eV to as low as 0.5 eV and the presence of mid-gap states, suggesting that strong correlations play an important role. While for anion (O) vacancies $σ_{1}$ shows changes from 7.4 eV up to 35 eV. These unexpected results can be explained in terms of orbital reconstruction.

cond-mat.str-el↗

arXiv2012

Optical conductivity study of screening of many-body effects in graphene interfaces

Theoretical studies have shown that electron-electron (e-e) and electron-hole (e-h) interactions play important roles in many observed quantum properties of graphene making this an ideal system to study many body effects. In this report we show that spectroscopic ellipsometry can enable us to measure this interactions quantitatively. We present spectroscopic data in two extreme systems of graphene on quartz (GOQ), an insulator, and graphene on copper (GOC), a metal which show that for GOQ, both e-e and e-h interactions dominate while for GOC e-h interactions are screened. The data further enables the estimation of the strength of the many body interaction through the effective fine structure constant, $α_{g}^{*}$. The $α_{g}^{*}$ for GOQ indicates a strong correlation with an almost energy independent value of about 1.37. In contrast, $α_{g}^{*}$ value of GOC is photon energy dependent, is almost two orders of magnitude lower at low energies indicating very weak correlation.

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