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Iman Taghavi

Publications and source records attributed to Iman Taghavi.

7 recordsLinked to original sources

DC-to-GHz Modulation In Microring Modulators Using Ferroelectric Nematic Liquid Crystal-on-Silicon in a Foundry Photonic Process

Silicon-organic hybrid (SOH) platforms exhibit exceptional electro-optic (EO) properties, including high-speed operation, low energy consumption, and compact footprints. However, the absence of a scalable poling method for EO polymers, combined with the slow switching speeds characteristic of liquid crystals, has impeded the integration and compatibility of these materials with commercial silicon photonic foundries. On the other hand, the realization of very-large-scale photonic integrated circuits (PICs) in the native silicon photonics platform itself is impeded by the complexities associated with the wavelength and thermal stabilization for microring modulators (MRMs). This study establishes the foundation for a poling-free, CMOS-compatible SOH MRM platform by exploiting simultaneous AC phase shifts in ferroelectric nematic liquid crystals (FN-LCs). We present the first demonstration of an MRM coated with FN-LC, with both the RF signal and the DC bias applied to the same electrodes, taking advantage of the dual phase shift uniquely available in FN-LC. An EO bandwidth of f$_{-6dB}\approx$ 7.8 GHz is achieved \textendash~ the highest reported value for an SOH MRM to date. As a proof of concept, we demonstrate an approximately linear resonance shift across the full width at half maximum ($\approx$ 150 pm/V), with a static power efficiency of $\approx$ 4.5 nW/$\pi$ for an MRM occupying a total footprint of $\approx$ 0.084 mm$^2$ and exhibiting an on-chip optical insertion loss of $\approx$ 0.78 dB. Successful infiltration of FN-LC, selectively patterned on top of phase shifters, along with optical input/output channels established using free-form photonic wire bonds, is demonstrated in the proposed PIC.

physics.optics

GHz-rate optical phase shift in light matter interaction-engineered, silicon-ferroelectric nematic liquid crystals

Organic electro-optic materials have demonstrated promising performance in developing electro-optic phase shifters. Their integration with other silicon photonic processes, nanofabrication complexities, and durability remains to be developed. While the required poling step in electro-optic polymers limits their potential and utilization on a large scale, devices made of paraelectric nematic liquid crystals suffer from slow bandwidth. In ferroelectric nematic liquid crystals, we report an additional GHz-fast phase shift that ultimately allows for significant second-order nonlinear optical coefficients related to the Pockels effect. It avoids poling issues and can pave the way for hybrid silicon-organic systems with CMOS-foundry compatibility. We report DC and AC modulation efficiencies of $\approx$~0.25 V$\cdot$mm (from liquid crystal orientation) and $\approx$~25.7 V$\cdot$mm (from Pockels effect), respectively, an on-chip insertion loss of $\approx$~2.6 dB, and an electro-optic bandwidth of $f_\text{-6dB}$>4.18 GHz, employing improved light-matter interaction in a waveguide architecture that calls for only one lithography step.

physics.optics

Enhanced Polling and Infiltration for Highly-Efficient Electro-Optic Polymer-Based Mach-Zehnder Modulators

An ultra-narrow slot waveguide is fabricated for use in highly-efficient, electro-optic-polymer-based, integrated-optic modulators. Measurement results indicate that $V_πL$'s below 1.2 V.mm are possible for balanced Mach-Zehnder modulators using this ultra-narrow slot waveguide on a silicon-organic hybrid platform. Simulated $V_πL$'s of 0.35 V.mm have also been obtained. In addition to adapting standard recipes, we developed two novel fabrication processes for achieving miniaturized devices with high modulation sensitivity. To boost compactness and decrease the overall footprint, we use a fabrication approach based on air bridge interconnects on thick, thermally-reflowed, MaN 2410 E-beam resist protected by an alumina layer. To overcome the challenges of high currents and imperfect infiltration of polymers into ultra-narrow slots, we use a carefully designed, atomically-thin layer of TiO$_2$ as a carrier-barrier to enhance the polling efficiency of our electro-optic polymers. Additionally, finite-difference time-domain simulations are employed to optimize the effect of the thin layer of TiO$_2$. As compared to other, non-optimized, cases, our peak measured current is reduced by a factor of 3; scanning electron microscopy images also demonstrate that we achieve almost perfect infiltration. The anticipated increase in total capacitance due to the TiO$_2$ layer is shown to be negligible. In fact, applying our TiO$_2$ surface treatment to our ultra-narrow slot, allows us to obtain an improved phase shift efficiency ($\partial n / \partial V$) of $\sim$94% for a 10 nm TiO$_2$ layer.

physics.app-ph

Large signal analysis of multiple quantum well transistor lasers: Investigation of imbalanced carrier and photon density distribution

In this paper, we present a large signal and switching analysis for the Heterojunction Bipolar Transistor Laser (TL) to reveal its optical and electrical behavior under high current injection conditions. Utilizing appropriate models for carrier transport, nonlinear optical gain and optical confinement factor (OCF), we have simulated the large signal response of the HBTL in relatively low and high modulation frequencies. Our results predict that for multiple quantum well structures at low frequencies there should not be a difference in carrier density either the photon density. However, carrier concentration can be differently distributed between subsequent wells in case of a high speed yet large signal input. This leads to increased linewidth instead as it depends on ΔNqw. We show the effect of different structural parameters on the switching behavior by performing a switching analysis of the Single Quantum Well (SQW) and Multiple Quantum Well (MQW) structures using computationally efficient numerical methods. A set of coupled rate equations is solved to investigate the large-signal and switching behavior of MQW-HBTL. Finally, to have a comprehensive judgment about this optoelectronic device, we introduce a relative performance factor to taking into account all the optoelectronic characteristics such as output power, ac current gain, modulation bandwidth, and base threshold current as well as turn-on time in order to design a suitable TL for Opto-Electronic Integrated Circuits (OEICs).

physics.app-ph

High Resolution Compressed Sensing Radar using Difference Set Codes

In this paper, we consider compressive sensing (CS)-based recovery of delays and Doppler frequencies of targets in high resolution radars. We propose a novel sub-Nyquist sampling method in the Fourier domain based on difference sets (DS), called DS-sampling, to create dictionaries with highly incoherent atoms. The coherence of the dictionary reaches the Welch minimum bound if the DS-sampling is employed. This property let us to implement sub-Nyquist high resolution radars with minimum number of samples. We also develop a low complexity recovery method, based on structured CS and propose a new waveform, called difference set--frequency coded modulated (DS-FCM) waveform, to boost the recovery performance of the sub-Nyquist radar in noisy environments. The proposed method solves some of the common problems in many CS-based radars and overcome disadvantages of the conventional Nyquist processing, i.e. matched filtering in high resolution radar systems. The proposed method allows us to design sub-Nyquist radars, which require less than 2% of Nyquist samples and recover targets without resolution degradation in comparison to the conventional Nyquist processing.

cs.IT

Graded index SCH transistor laser: Analysis of various confinement structures

New configuration of confinement structure is utilized to improve optoelectronic performances, including threshold current, AC current gain as well as optical bandwidth and optical output power of single quantum well transistor laser. Considering the drift component in addition to the diffusion term in electron current density, a new continuity equation is developed to analyze the proposed structures. Physical parameters including, electron mobility, recombination lifetime, optical confinement factor, electron capture time and photon lifetime is calculated for new structures. Based on solving continuity equation in separate confinement heterostructures, threshold current reduces 67% and optical output power increases 37%.

cond-mat.mes-hall

Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of \approx 60GHz is achieved in the case of 5 quantum wells each of 70A widths and a cavity length of 200um.

physics.optics