arXiv subjects

Intuon Chatratin

Publications and source records attributed to Intuon Chatratin.

5 recordsLinked to original sources

arXiv2026

Sequential Quenching to Predict Semiconductor Defect Concentrations from Formation & Migration Energies: The Case of CdTe:As Doping

Defect concentrations in semiconductors are strongly influenced by thermal history during growth and cooldown, yet most defect calculations assume either instantaneous quenching from high temperature or that full-equilibrium is maintained - two limiting cases rarely approached in reality. Here, we introduce sequential quenching (SQ) as a 3rd type of defect calculation utilizing defect formation and migration energies to model defect concentrations subject to diffusion-limited kinetics in samples cooled at finite rates. In SQ, the concentration of each defect is frozen at a characteristic temperature determined by its diffusion rate, distance to sources/sinks, and cooling rate. Because different charge-states interact through charge neutrality but freeze at different temperatures, the sequence of freeze-in events is non-commuting. Critically, not all room-temperature SQ solutions can be predicted from full equilibrium (EQ) or full-quenching (FQ) calculations - erroneous predictions are likely without SQ. We illustrate SQ using the example of As-doped CdTe, for which experimental data show differences in doping with cooling rate and between polycrystalline thin-films for photovoltaics and bulk crystals. SQ calculations reveal that fast-diffusing defects such as Cd-interstitials remain mobile to lower temperatures and freeze-in at larger characteristic distances, leading to strong compensation and n-type behavior in rapidly cooled or bulk samples. Slower cooling and reduced characteristic distances suppress donor freeze-in and enhance p-type activation. These results establish SQ as a physically transparent and computationally efficient framework for connecting cooling conditions, sample geometry, and defect kinetics to dopant activation in CdTe and related materials.

cond-mat.mtrl-sci↗

arXiv2026

Effects of uniaxial strain on monolayer transition-metal dichalcogenides revisited

Using hybrid density functional calculations including spin-orbit coupling, we compute the strain evolution of the band structure of monolayer 1H-phase transition-metal dichalcogenides, MX$_2$ (M= Mo, W; X= S, Se, Te), emphasizing an accurate reproduction of the quasiparticle band gap (as opposed to the excitonic optical gap). We show that tensile uniaxial strain applied along either the armchair or zigzag directions leads to a pronounced reduction of the fundamental gap, with the conduction-band edge generally exhibiting the stronger strain response. Both the conduction-band electron valleys (CBM) and the valence-band hole valleys (VBM) remain degenerate under uniaxial strain, while simultaneously drifting away from the high-symmetry $K$ point under strain ("valley drift"), such that the band extrema occur at nearby off-symmetry wave vectors. A minimal tight-binding model rationalizes the valley drift and the unequal electron- and hole-valley drift rates in the presence of strain, leading to indirect band gaps. In particular, for MoS$_2$ the indirectness increases with tensile strain, providing a natural explanation for the experimentally observed decrease in photoluminescence intensity under uniaxial deformation. These results provide quantitative guidance for tailoring band structures for optoelectronic and quantum-defect applications.

cond-mat.mtrl-sci↗

arXiv2022

Theoretically proposed another stable polymorph of two-dimensional penta-PdPSe

The theoretical discovery of new and stable 2D penta materials has stimulated the technological advancement due to the anticipated exotic properties of such structure, including the recent $α$ phase and $β$ phase of penta-NiPS based on first-principles calculations. Inspired by the similarity between the theoretically proposed penta-NiPS and the experimentally synthesized ($α$ phase) of penta-PdPSe, we preposed herein the $β$ phase penta-PdPSe as a new member of the penta-2D materials. Comprehensive analysis indicated that the $β$ phase penta-PdPSe is thermodynamically, dynamically, mechanically, and thermally stable, similar to the NiPS analog. It was found that $β$ penta-PdPSe is a wide band gap semiconductor with an indirect band gap of 1.58 eV, significantly lower than 2.15 eV for the $α$ phase. Moreover, the two polymorphs of penta-PdPSe are a soft material with 2D Young's modulus of $E_a$ = 151 Nm$^-1$ and $E_b$ = 123 Nm$^-1$ for the $β$ phase, to be compared with $E_a$ = 155 Nm$^-1$ and $E_b$ = 113 Nm$^-1$ for the $α$ phase. The calculated adsorption coefficient shows that $β$ phase penta-PdPSe is acceptable for electronic and optical nanodevice.

cond-mat.mtrl-sci↗

arXiv2022

Two-dimensional Penta-NiPS Sheets: Two Stable Polymorphs

The discovery of new and stable two-dimensional (2D) materials with exotic properties is essential for technological advancement. Inspired by the recently reported penta-PdPSe, we proposed penta-NiPS as a new member of the penta-2D materials based on first-principles calculations. The penta-NiPS monolayer is stable in two polymorphs including the alpha phase with identical structure as penta-PdPSe, and the newly proposed beta phase with rotated sublayers. Comprehensive analysis indicated that both phases are thermodynamically, dynamically, mechanically, and thermally stable. The penta-NiPS is a soft material with 2D Young's modulus of Ea=208 Nm^-1 and Eb=187 Nm^-1 for the alpha phase and Ea=184 Nm^-1 and Eb=140 Nm^-1 for the beta phase. Interestingly, the alpha-penta-NiPS showed nearly zero Poisson's ratios along the in-plane direction, where its dimensions would be maintained when being extended. For electronic applications, we demonstrated that penta-NiPS is the wide band gap semiconductor with an indirect band gap of 2.35 eV for alpha phase, and 2.20 eV for beta phase.

cond-mat.mtrl-sci↗

arXiv2022

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $β$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

cond-mat.mtrl-sci↗