arXiv subjects

Ioana Pintilie

Publications and source records attributed to Ioana Pintilie.

At least 19 recordsLinked to original sources

arXiv2026

Gain-Layer Project

Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is destroyed is not available on a defect level. Only measurements for materials with much lower effective doping concentrations are available. The direct study of the gain-layer is not possible with typical defect spectroscopy measurements like Thermally Stimulated Currents (TSC) and Deep-Level Transient Spectroscopy (DLTS). To combat this problem and gain a better understanding of the processes which degrade LGADs, the Gain-Layer Project was started. This project produced 19050 diodes with various Boron, Phosphorus, Oxygen and Carbon concentrations. The material used is low-resistivity p-type Silicon. The effective doping concentrations are in the order of a LGAD gain-layer. These diodes will serve the defect community in the coming years for various studies. This article introduces this project with detailed descriptions of the diodes, their flavours and their processing, and reports on results from I-V, C-V, SIMS and DLTS measurements on unirradiated diodes.

physics.ins-det↗

arXiv2026

Impact of interface defects on the band alignment and performance of TiO$_2$/MAPI/Cu$_2$O perovskite solar cells

Optimizing the interfaces in perovskite solar cells (PSCs) is essential for enhancing their performance, improving their stability, and making them commercially viable for large-scale deployment in solar energy harvesting applications. Point defects, like vacancies, have a dual role, as they can inherently provide a proper doping, but they can also reduce the collected current by trap-assisted recombination. Moreover, they can play an active role in ion migration and degradation. Using ab initio density functional theory (DFT) calculations we investigate the changes in the band alignment induced by interfacial vacancy defects in a TiO$_2$/MAPI/Cu$_2$O based PSC. Depending on the type of the vacancy (Ti, Cu, O, Pb, I) in the oxide and perovskite materials, additional doping is superimposed on the already existing background. Their effect on the performance of the PSCs becomes visible, as shown by SCAPS simulations. The most significant impact is observed for $p$ type doping of TiO$_2$ and $n$ type doping of Cu$_2$O, while the effective doping of the perovskite layer affects one of the two interfaces. We discuss these results based on modifications of the band structure near the active interfaces and provide further insights concerning the optimization of electron and hole collection.

cond-mat.mtrl-sci↗

arXiv2026

TailLoR: Protecting Principal Components in Parameter-Efficient Continual Learning

Parameter-efficient finetuning methods based on spectral decomposition have enabled progress in Continual Learning. In this paper we introduce TailLoR, which utilizes the singular bases U and V of the pre-trained weights as a fixed reference frame to learn a low-rank update applied to the singular value matrix. A soft spectral penalty discourages updates aligned with dominant singular directions, reducing interference while routing fine-grained adaptation into the highly flexible, long-tail spectral coordinates.

cs.LG↗

arXiv2026

JumpLoRA: Sparse Adapters for Continual Learning in Large Language Models

Adapter-based methods have become a cost-effective approach to continual learning (CL) for Large Language Models (LLMs), by sequentially learning a low-rank update matrix for each task. To mitigate catastrophic forgetting, state-of-the-art approaches impose constraints on new adapters with respect to the previous ones, by targeting either subspace or coordinate-wise interference. In this paper, we propose JumpLoRA, a novel framework to adaptively induce sparsity in the Low-Rank Adaptation (LoRA) blocks through the use of JumpReLU gating. The method achieves dynamic parameter isolation, which helps prevent task interference. We demonstrate that our method is highly modular and compatible with LoRA-based CL approaches. Specifically, it significantly boosts the performance of IncLoRA and outperforms the leading state-of-the-art CL method, ELLA.

cs.LG↗

arXiv2025

C-ing Clearly: Enhanced Binary Code Explanations using C code

Large Language Models (LLMs) typically excel at coding tasks involving high-level programming languages, as opposed to lower-level programming languages, such as assembly. We propose a synthetic data generation method named C-ing Clearly, which leverages the corresponding C code to enhance an LLM's understanding of assembly. By fine-tuning on data generated through our method, we demonstrate improved LLM performance for binary code summarization and vulnerability detection. Our approach demonstrates consistent gains across different LLM families and model sizes.

cs.CL↗

arXiv2025

ChronoGraph: A Real-World Graph-Based Multivariate Time Series Dataset

We present ChronoGraph, a graph-structured multivariate time series forecasting dataset built from real-world production microservices. Each node is a service that emits a multivariate stream of system-level performance metrics, capturing CPU, memory, and network usage patterns, while directed edges encode dependencies between services. The primary task is forecasting future values of these signals at the service level. In addition, ChronoGraph provides expert-annotated incident windows as anomaly labels, enabling evaluation of anomaly detection methods and assessment of forecast robustness during operational disruptions. Compared to existing benchmarks from industrial control systems or traffic and air-quality domains, ChronoGraph uniquely combines (i) multivariate time series, (ii) an explicit, machine-readable dependency graph, and (iii) anomaly labels aligned with real incidents. We report baseline results spanning forecasting models, pretrained time-series foundation models, and standard anomaly detectors. ChronoGraph offers a realistic benchmark for studying structure-aware forecasting and incident-aware evaluation in microservice systems.

cs.LG↗

arXiv2025

On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission

The elusive X-Defect, a defect found in low-resistivity $p$-type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i}$ defect (Boron-interstitial-Oxygen-interstitial complex) in Thermally Stimulated Current (TSC) measurements, was investigated to determine its properties, matching them with those of a previously identified defect. Through a combination of TSC, Deep-Level Transient Spectroscopy (DLTS), Difference-DLTS (DDLTS), numerical simulations of field-enhanced charge carrier emissions in TSC measurements and a comparison to literature, the X-Defect was identified as the singly positively charged Silicon di-vacancy $\mathrm{V}_2(+/0)$. This assignment is supported by an agreement in activation energy, capture cross-section, trap type and charge emission process, as well as simulations comparing the effects of phonon-assisted tunnelling (PAT) and Poole-Frenkel (PF) mechanisms on TSC spectra. DDTLS measurements revealed a quadratic dependence of the activation energy on the electric field strength, confirming PAT as the prevailing mechanism over PF in the case of the radiation-induced X-Defect. Assigning the X-Defect to an electrically neutral defect in the space charge region resolves previous contradictions regarding its deficiency in impacting on the effective doping concentration.

cond-mat.mtrl-sci↗

arXiv2025

Beyond Pass@k: Breadth-Depth Metrics for Reasoning Boundaries

Reinforcement Learning with Verifiable Rewards (RLVR) has emerged as a powerful paradigm to improve Large Language Models on reasoning tasks such as coding, math or logic. To assess the reasoning boundary (the fraction of problems a model can solve) researchers often report Pass@k at large sampling budgets. Recent results reveal a crossover phenomenon: while RLVR models outperform the base model at small k values, the base model usually outperforms them when sampling a very large number of completions. This has been interpreted as evidence that base models have a larger reasoning boundary. We argue that on tasks with discrete answer spaces, such as math with numeric outputs, Pass@k at large k reflects the increasingly higher chance of success in the limit of the number of trials rather than genuine reasoning, and can therefore be misleading. We propose Cover@tau, which measures the fraction of problems that a model can solve for which at least a tau proportion of completions are correct. Unlike Pass@k, Cover@tau captures reasoning under an explicit reliability threshold: models that rely on random guessing degrade rapidly as tau increases. We evaluate several RLVR models using Cover@tau-based metrics and illustrate how the relative rankings of popular algorithms change compared to Pass@1, offering a different perspective on reasoning boundaries.

cs.AI↗

arXiv2025

Defects and acceptor removal in 60Co γ-irradiated p-type silicon

Boron-doped silicon detectors used in high radiation environments like the future HL-LHC show a degradation in device performance due to the radiation induced deactivation of the active boron dopant. This effect, known as the so-called Acceptor Removal Effect (ARE), depends on particle type, particle energy and radiation dose and is usually explained by the formation of boroninterstitial - oxygen-interstitial (BiOi) defects that induce a donor-type defect level in the upper part of the Si band gap. Here we present defect characterization studies using Thermally Stimulated Current technique (TSC) and Deep Level Transient Spectroscopy (DLTS) on a set of epitaxially grown p-type silicon diodes of different resistivity, irradiated with 60Co γ-rays. We used the defect parameters (activation energy, charge carrier capture cross sections and defect concentration) obtained from DLTS experiments for modeling the corresponding TSC spectra, and subsequently compared those with the experimental TSC results. This approach shows that the di-vacancy which is well characterized by DLTS correlates with the so-far unspecified charge emission signal of the X-defect that partially overlaps with the BiOi peak in TSC spectra. Additionally, in order to evaluate the impact of BiOi defect formation on the macroscopic properties of the device, we compared the BiOi defect concentration with the change in the effective carrier concentration Neff obtained from C-V measurements. It shows that the variations in Neff are about twice the changes in the BiOi concentration, which is in perfect consistency with the assumption of boron deactivation by the formation of the BiOi donor in irradiated p-type Si.

hep-ex↗

arXiv2024

Electron transporting bilayers for perovskite solar cells: spray coating deposition of c-TiO2/m-SnO2-quantum dots

Herein we present a comparative study among different mesoporous electron transporter layers (ETLs), namely nanometric m-TiO2, m-SnO2 and m-SnO2 quantum dots (QDs), deposited by spray coating method. The experimental data correlated with the photovoltaic parameters indicate that the SnO2 mesoporous layer obtained from the spray deposition of the in-house prepared QDs solution is the best candidate between the three used mesoporous ETLs. The use of the in-house prepared SnO2 QDs solution presents smaller agglomerates composed of 3 nm NPs resulting in the formation of a thinner, more uniform, and compact mesoporous ETL, compared with the other two ETL solutions. The formamidinium-methylamonium-potassium (FAMA@10K) perovskite deposited on this m-SnO2 QDs ETL presents a lower RMS, more uniformity and, a higher amount of PbI2. Interestingly, this higher concentration for PbI2 seems to enhance the performance of the perovskite solar cells (PSC), compared to the other two mesoporous ETLs. Our work reveals that SnO2 QDs solution can be easily produced in the laboratory and it is more suited for the deposition of the mesoporous ETL when choosing a FAMA@10K configuration perovskite solar cell with power conversion efficiency (PCE) higher than 10%.

physics.app-ph↗

arXiv2023

Time Series Anomaly Detection using Diffusion-based Models

Diffusion models have been recently used for anomaly detection (AD) in images. In this paper we investigate whether they can also be leveraged for AD on multivariate time series (MTS). We test two diffusion-based models and compare them to several strong neural baselines. We also extend the PA%K protocol, by computing a ROCK-AUC metric, which is agnostic to both the detection threshold and the ratio K of correctly detected points. Our models outperform the baselines on synthetic datasets and are competitive on real-world datasets, illustrating the potential of diffusion-based methods for AD in multivariate time series.

cs.LG↗

arXiv2023

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

In this work, the effects of $^\text{60}$Co $γ$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) and microscopic (Thermally Stimulated Current~(TSC)) measurements were conducted to characterize the radiation-induced changes. The investigated diodes were manufactured on high resistivity $p$-type Float Zone (FZ) silicon and were further classified into two types based on the isolation technique between the pad and guard ring: $p$-stop and $p$-spray. After irradiation, the macroscopic results of current-voltage and capacitance-voltage measurements were obtained and compared with existing literature data. Additionally, the microscopic measurements focused on the development of the concentration of different radiation-induced defects, including the boron interstitial and oxygen interstitial (B$_\text{i}$O$_\text{i}$) complex, the carbon interstitial and oxygen interstitial C$_\text{i}$O$_\text{i}$ defect, the H40K, and the so-called I$_\text{P}^*$. To investigate the thermal stability of induced defects in the bulk, isochronal annealing studies were performed in the temperature range of \SI{80}{\celsius} to \SI{300}{\celsius}. These annealing processes were carried out on diodes irradiated with doses of 1 and \SI{2}{\mega Gy} and the corresponding TSC spectra were analysed. Furthermore, in order to investigate the unexpected results observed in the $C$-$V$ measurements after irradiation with high dose values, the surface conductance between the pad and guard ring was measured as a function of both dose and annealing temperature.

physics.ins-det↗

arXiv2023

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Two different types of diodes manufactured on p-type epitaxial and Czochralski silicon with a resistivity of about 10~$Ω\cdot$cm were irradiated with fluence values between \SI{1e15}{\per\square\centi\meter} and \SI{6e15}{\per\square\centi\meter}. Such diodes cannot be fully depleted and thus the accurate evaluation of defect concentrations and properties (activation energy, capture cross-section, concentration) from Thermally Stimulated Currents (TSC) experiments alone is not possible. In this study we demonstrate that by performing Thermally Stimulated Capacitance (TS-Cap) experiments in similar conditions to TSC measurements and developing theoretical models for simulating both types of B$_\text{i}$O$_\text{i}$ signals generated in TSC and TS-Cap measurements, accurate evaluations can be performed. The changes of the position-dependent electric field, the effective space charge density $N_\text{eff}$ profile as well as the occupation of the B$_\text{i}$O$_\text{i}$ defect during the electric field dependent electron emission, are simulated as a function of temperature. The macroscopic properties (leakage current and $N_\text{eff}$) extracted from current-voltage and capacitance-voltage measurements at \SI{20}{\celsius} are also presented and discussed

physics.app-ph↗

arXiv2023

Effect of pressure on the dynamics of iodine defects in MAPI: An atomistic simulation

The diffusion of iodine defects has been considered the most important degradation mechanism of methylammonium lead iodine (MAPI) in solar cells. The present study demonstrates the importance of the pressure inside this material on the dynamics of iodine defects, using molecular dynamics simulations. It is known that the diffusion coefficient of an iodine vacancy is an order of magnitude higher than that of interstitial iodine. We show that this difference systematically increases with increased tensile strain and that both diffusion coefficients tend to zero when a compressive strain is applied. This result suggests that compression of the MAPI can be a good solution to reduce its degradation rate. %Also, different methods of determining the diffusion coefficient, including mean squared displacement (MSD) and velocity auto-correlation function, are discussed and applied to the case of ${\rm V}_{\rm I}$. Besides, the statistical aspect of deriving the diffusion coefficient from the mean squared displacement (MSD) is discussed in terms of the initial conditions (positions and velocities) of the atoms and the simulation time, considering different seeds of the pseudo-random number generator used in the simulations performed with the LAMMPS software.

cond-mat.mtrl-sci↗

arXiv2022

Capacitive and inductive effects in perovskite solar cells: the different roles of ionic current and ionic charge accumulation

Dynamic hysteresis effects have been long known to occur in the J-V characteristics of perovskite solar cells (PSCs), with the ionic migration being identified as the primary factor. The hysteretic effects impacted early studies by the uncertainty in the evaluation of the power conversion efficiency, while currently, potential links to degradation mechanisms are in the focus. Therefore, understanding ion migration is a central goal, typically addressed by performing a combined large- and small signal analysis. The reported large capacitive and inductive effects created controversies with respect to the underlying mechanisms, yielding essentially two classes of models, one based on large accumulation capacitances and the other based on ionic modulation of the collected current. We introduce here an equivalent circuit model and interpret these phenomena in terms of recombination current modulation, identifying the distinct contributions from ion current and ionic charge accumulations. These contributions to the recombination current are associated with capacitive and inductive effects, respectively, and we corroborate the numerical simulations with electrochemical impedance spectroscopy (EIS) measurements. These show the role of the recombination currents of photogenerated carriers in producing both capacitive and inductive effects as the illumination is varied. Moreover, we provide a bridging point between the two classes of models and suggest a framework of investigation of defect states based on the observed inductive behavior, which would further aid the mitigation of the degradation effects.

cond-mat.mtrl-sci↗

arXiv2022

Optoelectronic and stability properties of quasi-2D alkylammonium based perovskites

Electronic and stability properties of quasi-2D alkylammonium perovskites are investigated using density functional theory (DFT) calculations and validated experimentally on selected classes of compounds. Our analysis is focused on perovskite structures of formula (A)$_2$(A$'$)$_{n-1}$Pb$_n$X$_{3n+1}$, with large cations A = butyl-, pentyl-, hexylammonium (BA, PA, HXA), small cations A$'$ = methylammonium, formamidinium, ethylammonium, guanidinium (MA,FA,EA,GA) and halogens X = I, Br, Cl. The role of the halogen ions is outlined for the band structure, stability and defect formation energies. Two opposing trends are found for the absorption efficiency versus stability, the latter being assessed with respect to possible degradation mechanisms. Experimental validation is performed on quasi-2D perovskites based on pentylammonium cations, namely: (PA)$_2$PbX$_4$ and (PA)$_2$(MA)Pb$_2$X$_7$, synthesized by antisolvent-assisted vapor crystallization. Structural and optical analysis are inline with the DFT based calculations. In addition, the thermogravimetric analysis shows an enhanced stability of bromide and chloride based compounds, in agreement with the theoretical predictions.

cond-mat.mtrl-sci↗

arXiv2022

Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors

High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a significant radiation tolerance. Thereby the impact of radiation on the highly boron-doped gain layer that enables the internal charge multiplication, is of special interest, since due to the so-called Acceptor Removal Effect (ARE) a radiation-induced deactivation of active boron dopants takes place. In this paper we present defect-spectroscopy measurements (Deep-Level Transient Spectroscopy and Thermally Stimulated Current technique) on neutron irradiated p-type silicon pad diodes of different resistivity as well as LGADs irradiated at fluences up to 1 x 10^15 neq/cm2. Thereby we show that while for the silicon pad diodes irradiated with electrons, neutrons or protons the determination of defect electronic properties and defect introduction rates is straightforward, DLTS and TSC measurements on LGADs are strongly influenced by the impact of the gain layer. It is shown that the measurability of the capacitance of the gain layer shows a strong frequency and temperature dependence leading to a capacitance drop in DLTS and non-reliable measurement results. With TSC defects formed in the LGADs can be very nicely observed and compared to the defects formed in the silicon pad diodes. However the exact assignment of defects to the gain layer or bulk region remains challenging and the charge amplification effect of the LGADs impacts the exact determination of defect concentrations. Additionally, we will demonstrate that depending on the TSC measurement conditions defect induced residual internal electric fields are built up in the irradiated LGADs that are influencing the current signal of carriers emitted from the defect states.

physics.ins-det↗

arXiv2019

The hysteresis-free behavior of perovskite solar cells from the perspective of the measurement conditions

We investigate in how far the hysteresis-free behavior of perovskite solar cells can be reproduced using particular pre-conditioning and measurement conditions. As there are currently more and more reports of perovskite solar cells without J-V hysteresis it is crucial to distinguish between genuine performance improvements and measurement artifacts. We focus on two of the parameters that influence the dynamic J-V scans, namely the bias scan rate and and the bias poling voltage, and point out measurement conditions for achieving a hysteresis-free behavior. In this context we discuss the suitability of defining a hysteresis index (HI) for the characterization of dynamic J-V scans. Using HI, aging effects are also investigated, establishing a potential connection between the sample degradation and the variation of the maximal hysteresis on one hand, and relaxation time scale of the slow process, on the other hand. Pre-poling induced recombinations effects are identified. In addition, our analysis based on sample pre-biasing reveals potential indication regarding two types of slow processes, with two different relaxation time scales, which provides further insight regarding ionic migration.

physics.app-ph↗