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Ioannis Varveris

Publications and source records attributed to Ioannis Varveris.

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Toward a CMOS-integrated quantum diamond biosensor based on NV centers

We report progress toward a CMOS-integrated quantum diamond biosensing platform that combines nitrogen-vacancy (NV) centers in diamond with a custom 40 nm CMOS Single-Photon Avalanche Diode (SPAD) array. The system integrates on-chip active quenching and digital readout with external FPGA-based photon counting, compact microwave delivery, and practical optical excitation and collection schemes to support widefield optically detected magnetic resonance (ODMR). System-level design considerations spanning fluorescence collection efficiency, detector count-rate capability, and microwave homogeneity are analyzed with biological compatibility and scalability in mind. Using superparamagnetic iron oxide nanoparticle (SPION)-labeled HEK293T cells as a representative use case, simple dipole-field estimates indicate that sub-$\mu$T sensitivity is required to resolve ODMR shifts within typical ensemble linewidths. Based on the proposed architecture and efficiency analysis, a magnetic field sensitivity of approximately 90 nT/$\sqrt{\mathrm{Hz}}$ per pixel is estimated. These results outline a practical path from optics-heavy quantum diamond microscopes toward compact, CMOS-integrated NV-based biosensors for quantitative magnetic imaging in complex biological environments.

physics.app-ph

Strain Effects in a Directly Bonded Diamond-on-Insulator Substrate

The direct bonding process of a diamond-on-insulator (DOI) substrate enables monolithic integration of diamond photonic structures for quantum computing by improving photon collection efficiency and entanglement generation rate between emitters. It also addresses key fabrication challenges, such as robustness, bonding strength, and scalability. This study investigates strain effects in DOI substrates following direct bonding. Strain generation is expected near the diamond-SiO$_2$/Si interface due to thermal expansion coefficient mismatch between the bonded materials. Strain-induced lattice distortions are characterized using nitrogen-vacancy (NV) centers in diamond via optically detected magnetic resonance (ODMR) and photoluminescence (PL) mapping. PL mapping reveals interference fringes in unbonded regions, indicating bonding irregularities. Depth-resolved ODMR measurements show a volumetric strain component increase of $\approx$0.45 MHz and a shear component increase of $\approx$0.71 MHz between the top surface and the DOI interface. However, ODMR signal contrast and peak linewidth remain largely unaffected, suggesting no visible deterioration in the optical properties of the emitters. By combining ODMR and PL mapping, this work establishes a robust methodology for assessing bonding quality and strain impact on NV centers, an essential step toward advancing scalable quantum technologies and integrated photonic circuits.

physics.app-ph