arXiv subjects

Iosif Galanakis

Publications and source records attributed to Iosif Galanakis.

11 recordsLinked to original sources

arXiv2023

First-principles prediction of energy band gaps in 18-valence electron semiconducting half-Heusler compounds: Exploring the role of exchange and correlation

The choice of exchange functional is a critical factor in determining the energy bandgap of semiconductors. Ab initio calculations using different exchange functionals, including the conventional generalized-gradient approximation (GGA) functionals, meta-GGA functionals, and hybrid functionals, show significant differences in the calculated energy bandgap for semiconducting half-Heusler compounds. These compounds, which have 18 valence electrons per unit cell, are of great interest due to their thermoelectric properties, making them suitable for energy conversion applications. In addition, accounting for electronic correlations using the GW method also affects the calculated energy bandgaps compared to standard GGA calculations. The variations in calculated energy bandgaps are specific to each material when using different functionals. Hence, a detailed investigation of the electronic properties of each compound is necessary to determine the most appropriate functional for an accurate description of the electronic properties. Our results indicate that no general rules can be established and a comparison with experimental results is required to determine the most appropriate functional.

cond-mat.mtrl-sci↗

arXiv2023

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction interfaces become not only metallic but also magnetic. The emergence of spin-polarization is accompanied by the formation of two-dimensional electron gas (2DEG) or hole gas (2DHG) at the interface. We qualitatively discuss the origin of the spin polarization at the interfaces on the basis of the Stoner model. For the cases of magnetic interfaces where half-metallicity is also present, we propose a modified Slater-Pauling rule similar to the one for bulk half-metallic half-Heusler compounds. Additionally, we calculate exchange parameters, Curie temperatures and magnetic anisotropy energies for magnetic interfaces. Our study, combined with the recent experimental evidence for the presence of 2DEG at CoTiSb/NiTiSn heterojunctions might motivate future efforts and studies toward the experimental realization of devices using the proposed heterojunctions.

cond-mat.mtrl-sci↗

arXiv2022

Ab-initio study of stable 3d, 4d and 5d transition metal based Quaternary Heusler compounds

The realization of the stable structure of Heusler compounds and the study of different properties is an important step for their potential application in spintronics and magnetoelectronic devices. In this paper, using the plane-wave pseudopotential method within the framework of density functional theory (DFT), we investigate 25 Quaternary Heusler compounds for their electronic, magnetic, and mechanical properties. The Open Quantum Materials Database (OQMD) is used to screen a large number of compounds to narrow down the possible synthesizable materials. The convex-hull distance and elastic constants are exploited to confirm the thermodynamic and mechanical stability of the compounds. The careful study of the different structures suggests that 5 of the compounds crystallize in type-1 structure whereas 20 compounds adopt type-3 structure. The possible explanation for the observed behavior is made by invoking electronegativity arguments and through the study of individual spin magnetic moments in different structures. The compounds with diverse electronic and magnetic properties such as half-metallicity, spin gapless semiconducting behavior, and non-magnetic semi-conducting property have been identified.

cond-mat.mtrl-sci↗

arXiv2021

Prediction of half-metallicity and spin-gapless semiconducting behavior in the new series of FeCr-based quaternary Heusler alloys: an ab initio study

This paper presents a detailed investigation of FeCr-based quaternary Heusler alloys. By using ultrasoft pseudopotential, electronic and magnetic properties of the compounds are studied within the framework of Density Functional Theory (DFT) by using the Quantum Espresso package. The thermodynamic, mechanical, and dynamical stability of the compounds is established through the comprehensive study of different mechanical parameters and phonon dispersion curves. The meticulous study of elastic parameters such as bulk, Young's, shear moduli, etc. is done to understand different mechanical properties. The FeCr-based compounds containing also Yttrium are studied to redress the contradictory electronic and magnetic properties observed in the literature. The interesting properties like half-metallicity and spin-gapless semiconducting (SGS) behavior are realized in the compounds under study.

cond-mat.mtrl-sci↗

arXiv2020

Ab initio study of the half-metallic full-Heusler compounds Co$_2$ZAl [Z = Sc, Ti, V, Cr, Mn, Fe]; the role of electronic correlations

We study the structural, electronic, and magnetic properties of Co$_2$ZAl compounds employing a pseudopotential electronic bandstructure method. The stability of the compounds is established through the formation and cohesive energy calculations. The effect of the lattice parameter variation on the electronic and magnetic properties of the compounds is investigated and meticulous explanation is provided for the observed behavior. The variation of the individual spin magnetic moments and the stability of the total spin magnetic moment during the expansion and contraction of the lattice parameter is observed and an attempt is made to understand the obtained behavior. Finally, we implement DFT+U to examine its consequences on the electronic and magnetic properties of the Co$_2$ZAl compounds. We find that the use of DFT+U is not justified for these compounds and in some cases like Co$_2$MnAl it produces unrealistic properties. The exception is Co2FeAl where the desired half-metallicity is restored after the inclusion of on-site correlations. We explain why the on-site correlations might be important for Co$_2$FeAl by comparing it with other Heusler alloys where the correlation was found to be meaningful to explain the observed magnetic moments.

cond-mat.mtrl-sci↗

arXiv2016

Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study

Heusler compounds are widely studied due to their variety of magnetic properties making them ideal candidates for spintronic and magnetoelectronic applications. V$_3$Al in its metastable D0$_3$-type Heusler structure is a prototype for a rare antiferromagnetic gapless behavior. We provide an extensive study on the electronic and magnetic properties of V$_3$Al, V$_3$Ga and V$_3$In compounds based on state-of-the-art electronic structure calculations. We show that the ground state for all three is a G-type itinerant antiferromagnetic gapless semiconductor. The large antiferromagnetic exchange interactions lead to very high Néel temperatures, which are predicted to be around 1000 K. The coexistence of the gapless and antiferromagnetic behaviors in these compounds can be explained considering the simultaneous presence of three V atoms at the unit cell using arguments which have been employed for usual inverse Heusler compounds. We expect that our study on these compounds to enhance further the interest on them towards the optimization of their growth conditions and their eventual incorporation in devices.

cond-mat.mtrl-sci↗

arXiv2015

Effect of the double-counting functional on the electronic and magnetic properties of half-metallic magnets using the GGA+U method

Methods based on the combination of the usual density functional theory (DFT) codes with the Hubbard models are widely used to investigate the properties of strongly correlated materials. Using first-principle calculations we study the electronic and magnetic properties of 20 half-metallic magnets performing self-consistent GGA+U calculations using both the atomic-limit (AL) and around-mean-field (AMF) functionals for the double counting term, used to subtract the correlation part from the DFT total energy, and compare these results to the usual generalized-gradient-approximation (GGA) calculations. Overall the use of AMF produces results similar to the GGA calculations. On the other hand the effect of AL is diversified depending on the studied material. In general the AL functional produces a stronger tendency towards magnetism leading in some cases to unphysical electronic and magnetic properties. Thus the choice of the adequate double-counting functional is crucial for the results obtained using the GGA+U method.

cond-mat.mtrl-sci↗

arXiv2013

A report on the magnetic order of transition-metal $δ$-doped cubic ZnO

Preliminary results on the properties of transition-metal (Ti, V, Cr, Mn, Fe, Co, Ni) $δ$-doped ZnO are reported. Using \emph{ab-initio} electronic structure calculations the magnetic order is studied assuming both the cubic rock-salt and zinc-blende structures for ZnO. The ground state magnetic order is found to depend strongly on the transition-metal atom.

cond-mat.mtrl-sci↗

arXiv2013

Ab-initio calculation of the effective on-site Coulomb interaction parameters for half-metallic magnets

Correlation effects play an important role in the electronic structure of half-metallic (HM) magnets. In particular, they give rise to non-quasiparticle states above (or below) the Fermi energy at finite temperatures that reduce the spin polarization and, as a consequence, the efficiency of spintronics devices. Employing the constrained random-phase approximation (cRPA) within the full-potential linearized augmented-plane-wave (FLAPW) method using maximally localized Wannier functions, we calculate the strength of the effective on-site Coulomb interaction (Hubbard $U$ and Hund exchange $J$) between localized electrons in different classes of HM magnets considering: (i) \emph{sp}-electron ferromagnets in rock-salt structure, (ii) zincblende 3\emph{d} binary ferromagnets, as well as (iii) ferromagnetic and ferrimagnetic semi- and full-Heusler compounds.

cond-mat.str-el↗

arXiv2007

Quasi two-dimensional carriers in dilute-magnetic-semiconductor quantum wells under in-plane magnetic field

Due to the competition between spatial and magnetic confinement, the density of states of a quasi two-dimensional system deviates from the ideal step-like form both quantitatively and qualitatively. We study how this affects the spin-subband populations and the spin-polarization as functions of the temperature, $T$, and the in-plane magnetic field, $B$, for narrow to wide dilute-magnetic-semiconductor quantum wells. We focus on the quantum well width, the magnitude of the spin-spin exchange interaction, and the sheet carrier concentration dependence. We look for ranges where the system is completely spin-polarized. Increasing $T$, the carrier spin-splitting, $U_{oσ}$, decreases, while increasing $B$, $U_{oσ}$ increases. Moreover, due to the density of states modification, all energetically higher subbands become gradually depopulated.

cond-mat.mtrl-sci↗

arXiv2002

Towards New Half-Metallic Systems: Zinc-Blende Compounds of Transition Elements with N, P, As, Sb, S, Se, and Te

We report systematic first-principles calculations for ordered zinc-blende compounds of the transition metal elements V, Cr, Mn with the sp elements N, P, As, Sb, S, Se, Te, motivated by recent fabrication of zinc-blende CrAs, CrSb, and MnAs. They show ferromagnetic half-metallic behavior for a wide range of lattice constants. We discuss the origin and trends of half-metallicity, present the calculated equilibrium lattice constants, and examine the half-metallic behavior of their transition element terminated (001) surfaces.

cond-mat.mtrl-sci↗