arXiv subjects

Irina V. Boylo

Publications and source records attributed to Irina V. Boylo.

4 recordsLinked to original sources

arXiv2026

Exact solution for stationary states of a closed memristor with mobile charged vacancies

A nonlinear model of a memristor based on charged mobile vacancies is considered taking into account the electrostatic interaction between them. This interaction significantly affects the stationary (limiting) vacancy distributions formed under the action of the electric current flowing through the memristor, for which analytical expressions are obtained in this work. Between the regions with reduced and increased vacancy concentrations, an intermediate electrically neutral region is formed due to the electrostatic interaction. Interestingly, the limiting resistances in the ``on'' and ``off'' states of such a memristor do not depend on the strength of the electrostatic interaction, at least in the leading first order in the vacancy concentration.

cond-mat.mes-hall↗

arXiv2025

Switching of a closed mobile vacancy based memristor, whose specific resistance linearly depends on local vacancy concentration

The linear (proportional to local vacancy concentration) term in specific resistance of the material does not directly contribute to the change of memristor's total resistance when the vacancies are redistributed inside while keeping their total number constant. But it still changes kinetics of the vacancy drift under the influence of a passing electric current. These changes are especially significant in the presence of metal-insulator phase transition in the memristor's material. In this paper, kinetic equation for local vacancy concentration is obtained, and exact solutions for its steady states are analyzed. It is shown that not only in the weakly nonlinear case (when the dependence of the specific resistance on the vacancy concentration can be neglected), but also in a strongly non-linear memristor with phase transition, its kinetics can be reduced to the classical exactly solvable Burgers equation.

cond-mat.mes-hall↗

arXiv2020

Nonlinear effects in memristors with mobile vacancies

Because the local concentration of vacancies in any material is bounded, their motion must be accompanied by nonlinear effects. Here we look for such effects in a simple model for electric field driven vacancy motion in memristors, solving the corresponding nonlinear Burgers' equation with impermeable nonlinear boundary conditions analytically. We find non-monotonous relaxation of the resistance while switching between the stable (``on''/``off'') states of the memristor; and qualitatively different film thickness dependencies of switching time (under applied current) and relaxation time (under no current). Our exact solution can serve as a useful benchmark for simulations of more complex memristor models.

cond-mat.mes-hall↗

arXiv2016

Role of nonlinearity in resistive switching phenomena of lanthanum calcium manganate heterostructures

The present paper examines the influence of a nonlinear relationship between the local oxygen-vacancy concentration and the local resistivity on resistive switching effects in complex oxides. The continuity equation has been used as a model for the motion of oxygen vacancies when a periodic time-dependent electrical current is applied. The question of endurance of the switching cycles is discussed. It is found that nonlinearity of the resistivity-concentration dependence enhances the endurance.

cond-mat.mes-hall↗