arXiv subjects

Irina V. Grigorieva

Publications and source records attributed to Irina V. Grigorieva.

At least 19 recordsLinked to original sources

arXiv2025

Unconventional magnetization in the multiphase superconductor PdBi$_2$

Unconventional superconductors have specific signatures in their magnetic properties, such as intrinsic magnetization at interfaces and around defects and fractional and multiquanta vortices, with much attention focused on heavy fermion and high-$T_c$ superconductors. Here, we report the observation of highly anomalous magnetization in $β$-PdBi$_2$, a layered superconductor previously shown to exhibit a magnetic field-induced transition from s-wave to nodal p-wave superconductivity at a transition field $H^*\sim$0.1 T ($H_{C1}<H^*<H_{C2}$). This transition is driven by the coupling between spin-polarized electronic bands and the in-plane magnetic field. In the unconventional phase (above $H^*$) we observe three striking features: strictly linear and non-hysteretic dc magnetization, a sharp drop in the ac susceptibility when the field is applied parallel to the ab-plane, and a pronounced anisotropy in the magnetic response between parallel and perpendicular field orientations. We show that these features are directly correlated with the expected transition to the nodal p-wave state and propose that the unusual magnetization behavior can be explained by a transition from a conventional vortex lattice in the low-field s-wave phase to a domain structure corresponding to spatial phase separation into superconducting (p-wave) and normal domains above $H^*$. Our work identifies new experimental signatures of unconventional multiphase superconductivity, offering an insight into the magnetic-field response of nodal states.

cond-mat.supr-con↗

arXiv2025

Proximity screening greatly enhances electronic quality of graphene

The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded record-quality two-dimensional gases with transport and quantum mobilities reaching close to 10$^8$ and 10$^6$ cm$^2$/Vs, respectively. Although the quality of graphene devices has also been improving, it remains comparatively lower. Here we report a transformative improvement in the electronic quality of graphene by employing graphite gates placed in its immediate proximity, at 1 nm separation. The resulting screening reduces charge inhomogeneity by two orders of magnitude, bringing it down to a few 10$^7$ cm$^-2$ and limiting potential fluctuations to less than 1 meV. Quantum mobilities reach 10$^7$ cm$^2$/Vs, surpassing those in the highest-quality semiconductor heterostructures by an order of magnitude, and the transport mobilities match their record. This quality enables Shubnikov-de Haas oscillations in fields as low as 1 mT and quantum Hall plateaus below 5 mT. Although proximity screening predictably suppresses electron-electron interactions, fractional quantum Hall states remain observable with their energy gaps reduced only by a factor of 3-5 compared to unscreened devices, demonstrating that many-body phenomena at spatial scales shorter than 10 nm remain robust. Our results offer a reliable route to improving electronic quality in graphene and other two-dimensional systems, which should facilitate the exploration of new physics previously obscured by disorder.

cond-mat.mes-hall↗

arXiv2025

Spin polarised quantised transport via one-dimensional nanowire-graphene contacts

Graphene spintronics offers a promising route to achieve low power 2D electronics for next generation classical and quantum computation. As device length scales are reduced to the limit of the electron mean free path, the transport mechanism crosses over to the ballistic regime. However, ballistic transport has yet to be shown in a graphene spintronic device, a necessary step towards realising ballistic spintronics. Here, we report ballistic injection of spin polarised carriers via one-dimensional contacts between magnetic nanowires and a high mobility graphene channel. The nanowire-graphene interface defines an effective constriction that confines charge carriers over a length scale smaller than that of their mean free path. This is evidenced by the observation of quantised conductance through the contacts with no applied magnetic field and a transition into the quantum Hall regime with increasing field strength. These effects occur in the absence of any constriction in the graphene itself and occur across several devices with transmission probability in the range T = 0.08 - 0.30.

cond-mat.mes-hall↗

arXiv2024

Multiphase superconductivity in PdBi2

Unconventional superconductivity, where electron pairing does not involve electron-phonon interactions, is often attributed to magnetic correlations in a material. Well known examples include high-T_c cuprates and uranium-based heavy fermion superconductors. Less explored are unconventional superconductors with strong spin-orbit coupling, where interactions between spin-polarised electrons and external magnetic field can result in multiple superconducting phases and field-induced transitions between them, a rare phenomenon in the superconducting state. Here we report a magnetic-field driven phase transition in β-PdBi2, a layered non-magnetic superconductor. Our tunnelling spectroscopy on thin PdBi2 monocrystals incorporated in planar superconductor-insulator-normal metal junctions reveals a marked discontinuity in the superconducting properties with increasing in-plane field, which is consistent with a transition from conventional (s-wave) to nodal pairing. Our theoretical analysis suggests that this phase transition may arise from spin polarisation and spin-momentum locking caused by locally broken inversion symmetry, with p-wave pairing becoming energetically favourable in high fields. Our findings also reconcile earlier predictions of unconventional multigap superconductivity in β-PdBi2 with previous experiments where only a single s-wave gap could be detected.

cond-mat.supr-con↗

arXiv2024

In-plane staging in lithium-ion intercalation of bilayer graphene

The ongoing efforts to optimize Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underpinning the storage capacity remain poorly understood. Here, using magnetotransport measurements, we report in-operando intercalation dynamics of bilayer graphene. Unexpectedly, we find four distinct intercalation stages that correspond to well-defined Li-ion densities. We refer to these stages as 'in-plane', with no in-plane analogues in bulk graphite. The fully intercalated bilayers represent a stoichiometric compound C14LiC14 with a Li density of 2.7x10^{14} cm^{-2}, notably lower than fully intercalated graphite. Combining the experimental findings and DFT calculations, we show that the critical step in bilayer intercalation is a transition from AB to AA stacking which occurs at a density of 0.9x10^{14} cm^{-2}. Our findings reveal the mechanism and limits for electrochemical intercalation of bilayer graphene and suggest possible avenues for increasing the Li storage capacity.

cond-mat.mtrl-sci↗

arXiv2024

Oblique spin injection to graphene via geometry controlled magnetic nanowires

We exploit the geometry of magnetic nanowires, which define 1D contacts to an encapsulated graphene channel, to introduce an out-of-plane component in the polarisation of spin carriers. By design, the magnetic nanowires traverse the angled sides of the 2D material heterostructure. Consequently, the easy axis of the nanowires is inclined, and so the local magnetisation is oblique at the injection point. As a result, when performing non-local spin valve measurements we simultaneously observe both switching and spin precession phenomena, implying the spin population possesses both in-plane and out-of-plane polarisation components. By comparing the relative magnitudes of these components, we quantify the angle of the total spin polarisation vector. The extracted angle is consistent with the angle of the nanowire at the graphene interface, evidencing that the effect is a consequence of the device geometry. This simple method of spin-based vector magnetometry provides an alternative technique to define the spin polarisation in 2D spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Thermopower in hBN/graphene/hBN superlattices

Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is aligned to one of the hBN layers, we demonstrate the presence of additional sign reversals in the thermopower as a function of carrier density, directly evidencing the presence of the moiré superlattice. We show that the temperature dependence of the thermopower enables the assessment of the role of built-in strain variation and van Hove singularities and hints at the presence of Umklapp electron-electron scattering processes. As the thermopower peaks around the neutrality point, this allows to probe the energy spectrum degeneracy. Further, when graphene is double-aligned with the top and bottom hBN crystals, the thermopower exhibits features evidencing multiple cloned Dirac points caused by the differential super-moiré lattice. For both cases we evaluate how well the thermopower agrees with Mott's equation. Finally, we show the same superlattice device can exhibit a temperature-driven thermopower reversal from positive to negative and vice versa, by controlling the carrier density. The study of thermopower provides an alternative approach to study the electronic structure of 2D superlattices, whilst offering opportunities to engineer the thermoelectric response on these heterostructures.

cond-mat.mes-hall↗

arXiv2023

Exploring room temperature spin transport under band gap opening in bilayer graphene

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.

cond-mat.mes-hall↗

arXiv2022

Tuneable spin injection in high-quality graphene with one-dimensional contacts

Spintronics involves the development of low-dimensional electronic systems with potential use in quantum-based computation. In graphene, there has been significant progress in improving spin transport characteristics by encapsulation and reducing impurities, but the influence of standard two-dimensional (2D) tunnel contacts, via pinholes and doping of the graphene channel, remains difficult to eliminate. Here, we report the observation of spin injection and tuneable spin signal in fully-encapsulated graphene, enabled by van der Waals heterostructures with one-dimensional (1D) contacts. This architecture prevents significant doping from the contacts, enabling high-quality graphene channels, currently with mobilities up to 130,000 cm$^2$V$^{-1}$s$^{-1}$ and spin diffusion lengths approaching 20 $μ$m. The nanoscale-wide 1D contacts allow spin injection both at room and at low temperature, with the latter exhibiting efficiency comparable with 2D tunnel contacts. At low temperature, the spin signals can be enhanced by as much as an order of magnitude by electrostatic gating, adding new functionality.

cond-mat.mes-hall↗

arXiv2021

Magnetization signature of topological surface states in a non-symmorphic superconductor

Superconductors with nontrivial band structure topology represent a class of materials with unconventional and potentially useful properties. Recent years have seen much success in creating artificial hybrid structures exhibiting main characteristics of two-dimensional (2D) topological superconductors. Yet, bulk materials known to combine inherent superconductivity with nontrivial topology remain scarce, largely because distinguishing their central characteristic -- topological surface states -- proved challenging due to a dominant contribution from the superconducting bulk. Reported here is a highly anomalous behaviour of surface superconductivity in topologically nontrivial 3D superconductor In2Bi where the surface states result from its nontrivial band structure, which itself is a consequence of the non-symmorphic crystal symmetry and strong spin-orbit coupling. In contrast to smoothly decreasing diamagnetic susceptibility above the bulk critical field Hc2, associated with surface superconductivity in conventional superconductors, we observe near-perfect, Meissner-like screening of low-frequency magnetic fields well above Hc2. The enhanced diamagnetism disappears at a new phase transition close to the critical field of surface superconductivity Hc3. Using theoretical modelling, we show that the anomalous screening is consistent with modification of surface superconductivity due to the presence of topological surface states. The demonstrated possibility to detect signatures of the surface states using macroscopic magnetization measurements provides an important new tool for discovery and identification of topological superconductors.

cond-mat.supr-con↗

arXiv2020

Quantum rescaling, domain metastability and hybrid domain-walls in two-dimensional CrI3 magnets

Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) CrI3 as a quantum non-Heisenberg material with properties far beyond an Ising magnet as initially assumed. We find that biquadratic exchange interactions are essential to quantitatively describe the magnetism of CrI3 but requiring quantum rescaling corrections to reproduce its thermal properties. The quantum nature of the heat bath represented by discrete electron-spin and phonon-spin scattering processes induced the formation of spin fluctuations in the low temperature regime. These fluctuations induce the formation of metastable magnetic domains evolving into a single macroscopic magnetization or even a monodomain over surface areas of a few micrometers. Such domains display hybrid characteristics of Neel and Bloch types with a narrow domain wall width in the range of 3-5 nm. Similar behaviour is expected for the majority of 2D vdW magnets where higher-order exchange interactions are appreciable.

cond-mat.mes-hall↗

arXiv2020

Characterization of domain formation during random sequential adsorption of stiff linear $k$-mers onto a square lattice

Using computer simulation, we have studied the random sequential adsorption of stiff linear $k$-mers onto a square lattice. Each such particle occupies $k$ adjacent lattice sites. During deposition, the two mutually perpendicular orientations of the particles are equiprobable, hence, a macroscopically isotropic monolayer is formed. However, this monolayer is locally anisotropic, since the deposited particles tend to form domains of particles with the same orientation. Using the "excluded area" concept, we have classified lattice sites into several types and examined how the fraction of each type of lattice site varies as the number of deposited particles increases. The behaviors of these quantities have allowed us to identify the following stages of domain formation (i) the emergence of domain seeds; (ii) the filling of domains; (iii) densification of the domains.

cond-mat.stat-mech↗

arXiv2020

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

cond-mat.mtrl-sci↗

arXiv2018

Fluidity Onset in Graphene

Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated electron transport in solids. Here we report on a direct observation of the transition to this long-sought-for state of matter in a high-mobility electron system in graphene. Unexpectedly, the electron flow is found to be interaction-dominated but non-hydrodynamic (quasiballistic) in a wide temperature range, showing signatures of viscous flows only at relatively high temperatures. The transition between the two regimes is characterized by a sharp maximum of negative resistance, probed in proximity to the current injector. The resistance decreases as the system goes deeper into the hydrodynamic regime. In a perfect darkness-before-daybreak manner, the interaction-dominated negative response is strongest at the transition to the quasiballistic regime. Our work provides the first demonstration of how the viscous fluid behavior emerges in an interacting electron system.

cond-mat.mes-hall↗

arXiv2018

Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers

Hexagonal boron nitride (hBN) is a prototypical high-quality two-dimensional insulator and an ideal material to study tunneling phenomena, as it can be easily integrated in vertical van der Waals devices. For spintronic devices, its potential has been demonstrated both for efficient spin injection in lateral spin valves and as a barrier in magnetic tunnel junctions (MTJs). Here we reveal the effect of point defects inevitably present in mechanically exfoliated hBN on the tunnel magnetoresistance of Co-hBN-NiFe MTJs. We observe a clear enhancement of both the conductance and magnetoresistance of the junction at well-defined bias voltages, indicating resonant tunneling through magnetic (spin-polarized) defect states. The spin polarization of the defect states is attributed to exchange coupling of a paramagnetic impurity in the few-atomic-layer thick hBN to the ferromagnetic electrodes. This is confirmed by excellent agreement with theoretical modelling. Our findings should be taken into account in analyzing tunneling processes in hBN-based magnetic devices. More generally, our study shows the potential of using atomically thin hBN barriers with defects to engineer the magnetoresistance of MTJs and to achieve spin filtering, opening the door towards exploiting the spin degree of freedom in current studies of point defects as quantum emitters.

cond-mat.mes-hall↗

arXiv2018

Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2

It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors.

cond-mat.supr-con↗

arXiv2017

Intercalant-independent transition temperature in superconducting black phosphorus

Research on black phosphorus (BP) has been experiencing a renaissance over the last few years, after the demonstration that few-layer BP exhibits high carrier mobility and a thickness-dependent band gap. For a long time, bulk BP is also known to be a superconductor under high pressure exceeding 10 GPa. The superconductivity is due to a structural transformation into another allotrope of phosphorous and accompanied by a semiconductor-metal transition. No superconductivity could be achieved for BP itself (that is, in its normal orthorhombic form) despite several attempts reported in the literature. Here we describe successful intercalation of BP by several alkali metals (Li, K, Rb, Cs) and alkali-earth Ca. All the intercalated compounds are found to be superconducting, exhibiting the same (within our experimental accuracy) critical temperature of 3.8+-0.1 K and practically identical characteristics in the superconducting state. Such universal superconductivity, independent of the chemical composition, is highly unusual. We attribute it to intrinsic superconductivity of heavily-doped individual phosphorene layers, while the intercalated layers of metal atoms mostly play a role of charge reservoirs.

cond-mat.mtrl-sci↗

arXiv2015

Superconductivity in potassium-doped metallic polymorphs of MoS2

Superconducting layered transition metal dichalcogenides (TMDs) stand out among other superconductors due to the tunable nature of the superconducting transition, coexistence with other collective electronic excitations (charge density waves) and strong intrinsic spin-orbit coupling. Molybdenum disulphide (MoS2) is the most studied representative of this family of materials, especially since the recent demonstration of the possibility to tune its critical temperature, Tc, by electric-field doping. However, just one of its polymorphs, band-insulator 2H-MoS2, has so far been explored for its potential to host superconductivity. We have investigated the possibility to induce superconductivity in metallic polytypes, 1T- and 1T'-MoS2, by potassium (K) intercalation. We demonstrate that at doping levels significantly higher than that required to induce superconductivity in 2H-MoS2, both 1T and 1T' phases become superconducting, with Tc = 2.8 and 4.6K, respectively. Unusually, K intercalation in this case is responsible both for the structural and superconducting phase transitions. By adding new members to the family of superconducting TMDs our findings open the way to further manipulate and enhance the electronic properties of these technologically important materials.

cond-mat.supr-con↗