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Irina V. Kondakova

Publications and source records attributed to Irina V. Kondakova.

2 recordsLinked to original sources

Colossal dielectric response of HfxZr1-xO2 nanoparticles

We reveal a colossal dielectric response of small (5 - 10 nm) oxygen-deficient HfxZr1-xO2 nanoparticles (x = 1 - 0.4), prepared by the solid-state organonitrate synthesis. The effective dielectric permittivity of the pressed HfxZr1-xO2 nanopowders has a pronounced maximum at 38 - 88 C, which shape can be fitted by the Curie-Weiss type dependence modified for the diffuse ferroelectric-paraelectric phase transition. The maximal value of the dielectric permittivity increases from 1.5*10^3 (for x = 1) to 1.5*10^5 (for x= 0.4) at low frequencies (~4 Hz); being much smaller, namely changing from 7 (for x = 1) to 20 (for x = 0.4) at high frequencies (~500 kHz). The frequency dispersion of the dielectric permittivity maximum position is almost absent, meanwhile the shape and width of the maximum changes in a complex way with increase in frequency. The temperature dependencies of the dielectric permittivity and resistivity are almost mirror-like turned over in respect to each other, which means that all their features, such as position and shape of maxima, plateau, minima and inflexions, almost coincide after the mirror reflection in respect to the temperature axis. These correlations of resistivity and dielectric permittivity are well-described in the Heywang barrier model applied together with the variable range hopping conduction model in semiconducting ferroelectrics. The ferroelectric-like behavior of the small oxygen-deficient HfxZr1-xO2 nanoparticles is expected from the Landau-Ginzburg-Devonshire approach and density functional theory calculations. Obtained results may be useful for developing silicon-compatible functional nanomaterials based on HfxZr1-xO2 nanoparticles.

cond-mat.mtrl-sci↗

Resistive switching and charge accumulation in Hf0.5Zr0.5O2 nanoparticles

We revealed the resistive switching, negative differential resistance and charge accumulation effects in Hf0.5Zr0.5O2 nanopowders sintered by the auto-combustion sol-gel method and annealed at temperatures from 500°C to 800°C. The fraction of the orthorhombic phase, determined by the X-ray diffraction (XRD), decreases from 91 vol.% to 7 vol.% with an increase in the annealing temperature from 600°C to 800°C. The electron paramagnetic resonance (EPR) spectra reveal the great amount of oxygen vacancies in the annealed samples, at that the decrease of the orthorhombic phase fraction (observed with an increase in the annealing temperature) correlates with a decrease in the intensity of EPR spectral lines associated with the oxygen vacancies and impurities. This indicates the participation of oxygen vacancies and other defects in the formation of the orthorhombic phase in the Hf0.5Zr0.5O2 powders. To explain the results of electrophysical measurements, we compare the features of the current-voltage characteristics with the phase composition of the Hf0.5Zr0.5O2 powders and with the peculiarities of their EPR spectra. The analysis allows us to relate the resistive switching and charge accumulation observed in Hf0.5Zr0.5O2 nanopowders with the appearance of the ferroelectric-like polar regions in the orthorhombic phase of the nanoparticles, which agrees with the calculations performed in the framework of Landau-Ginzburg-Devonshire approach and density functional theory.

cond-mat.mtrl-sci↗