arXiv subjects

Irzaman

Publications and source records attributed to Irzaman.

3 recordsLinked to original sources

arXiv2001

Electrical Properties of Crystalline Ba0.5Sr0.5TiO3 Thin Films

Thin Ba0.5Sr0.5TiO3 (BST) films on p-type Si (100) using The Chemical Solution Deposition (CSD) method. X-ray diffraction (XRD), Scanning electron microscopy (SEM), C-V meter analysis measurement were employed to characterise the films. The growth condition to obtain enough quality epitaxial of Ba0.5Sr0.5TiO3 carried out by spin coating at 3000 rpm for 30 seconds, and then annealing at 900oC for 15 hours. The structure and crystallinity of thin films were investigated by XRD preffered orientation (100), (010); (110), (111), (200), surface analysis by SEM magnification x10000 thin films were heterogen and thickness film 1100 nm; electrical characterization Ba0.5Sr0.5TiO3 at MFS (Metal Ferroelectric Semiconductor) structure in room temperature (300 K) by carried out capacitance flat band (CFB) for frequency 10 KHz and 100 KHz were 206 pF and 187 pF, dielectric constant for frequency 10 KHz and 100 KHz were 132.67 and 117.22, dielectric loss minimum for frequency 10 KHz and 100 KHz were 5.37 % and 6.43 % respectively.

cond-mat↗

arXiv2001

Spectral Response of Al/Si Photodiode as IR Sensor

Al/Si photodiode were prepared by successive of deposition of Aluminum thin films on p-type Si (100) using coprecipitation method by evaporator in vacuum 2.0E-4 torr. The measured signals are attributed to a spectral response, which appears in the studied photodiode. The photodiode Al/Si is sensitivity over a broad range of IR wavelengths from 800 to 1000 nm, when illuminated with discontinuous light at chopper frequency 200 Hz. The spectral response distribution that sensitivity peaks appear when the measurement was performed using the ac mode. The peak was at 981 nm, the incident radiation power (Pi) at the surface was 25 microwatt/cm2, the current signal (Ip) was 12.2 nA, the quantum efficiency was 6.16 % and the current sensitivity was 0.488 nA/microwatt/cm2.

cond-mat↗

arXiv2001

Preparation of Bi4ti3o12 Thin Films by a Pulsed Laser Ablation Deposition (PLAD) Method and their Applications for Ultraviole Detectors

Bi4Ti3O12 (BIT) has been considered as material for UV detector since it has optical band gap of about 3.5 eV. Unlike the most used material for this purpose, such as GaN and AlN, BIT is a ferroelectric oxide material. It has shown good detection properties in the UV regions. We have developed a Pulsed Laser Ablation Deposition (PLAD) method for preparation of BIT thin films. The BIT films were grown on Si/SiO2/Pt(111) substrates and these films exhibit good crystalline properties with preferential orientation in c-axis. A structure of Al/Bi4Ti3O12/Pt(111)/Si(100) was fabricated for measurement of spectral distribution of the voltage responsivity. The maximum voltage responsivity and the spectral distribution significantly depend on the films preparations and treatments.

cond-mat↗