arXiv subjects

Isaac Soltero

Publications and source records attributed to Isaac Soltero.

10 recordsLinked to original sources

arXiv2026

Moir\'e-induced lattice reconstruction at buried atomic interfaces

Atomic reconstruction at twisted two-dimensional interfaces governs many of their emergent optical, electronic, and mechanical properties, including sliding ferroelectricity. Despite recent progress in understanding lattice reconstruction in suspended twisted bilayers, structural changes at van der Waals heterointerfaces between multilayer crystals remain largely unexplored. Here we use multi-slice electron ptychography to non-invasively recover the three-dimensional atomic structure at marginally twisted rhombohedral interfaces between thick transition-metal dichalcogenide crystals. With a position precision of ~3 pm and a depth resolution ~1 nm, we resolve the twist-induced lattice reconstruction field per layer, and the resulting dislocation network at the buried interface. Despite the bulk nature, we observe markedly strong in-plane interfacial reconstruction due to suppression of the out-of-plane bending by outer layers, exceeding predictions from our three-dimensional modelling. Furthermore, we extract the strain tensor evolution during the decay of the reconstruction into the bulk, providing a structural foundation for understanding multi-layer moir\'e systems.

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arXiv2026

Locally resolved electronic textures of reconstruction domains in marginally twisted monolayer-bilayer graphene

Controlling the stacking and rotational registry of graphene layers provides a powerful handle on atomic-scale structural reconstructions that alter the electronic landscape at the nanoscale. In particular, this governs how massless and massive Dirac fermions coexist and interact at the monolayer-bilayer graphene interface. In the limit of marginal twist, the system reconstructs into domains of distinct vertical stacking order, introducing characteristic electronic properties and new electronic length scales, a regime that, despite its structural richness, remains largely unexplored. Here, using scanning tunnelling microscopy and spectroscopy, we demonstrate that at very low rotation angles the monolayer-bilayer graphene system relaxes into a network of three distinct stacking domains with individual electronic textures revealed through spatially resolved spectroscopic mapping and corroborated by computed local density of states. We report switching of the hierarchy of the tunnelling characteristics between Bernal and rhombohedral domains as a function of bias voltage. Furthermore, the measured spectroscopic maps exhibit theoretically anticipated domain wall 'twirling' around energetically unfavorable AAB stacking nodes, promoted by out-of-plane deformations. Our results shed light on fundamental structure-property relationships underpinning moir\'e-driven phenomena, opening new avenues for harnessing structural degrees of freedom in van der Waals heterostructures.

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arXiv2026

Charge distribution across dislocation networks induced by a strained top layer in hexagonal boron nitride substrates

Hexagonal boron nitride (hBN) flakes are key building blocks for encapsulating two-dimensional (2D) materials, providing atomically flat surfaces and an excellent dielectric environment for high-mobility field-effect transistors and tunnelling devices. However, strain induced during mechanical exfoliation and assembly of van der Waals heterostructures may lead to plastic deformations of the hBN surface, injecting dislocation lines between the topmost layer and the underlying film. Since a monolayer of hBN is non-centrosymmetric and exhibits a piezoelectric response to deformation, individual dislocations and, in particular their networks, can generate electrostatic potential modulations in the encapsulated 2D material. Here, we examine scenarios in which the top hBN layer is uniaxially strained and/or twisted, and show how lattice reconstruction into dislocation networks leads to the formation of piezoelectric charge hotspots that effectively behave as charged defects.

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arXiv2025

Gate-tunable band-edge in few-layer MoS$_2$

Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-layer and bulk configurations. In monolayers, the conduction band minima are centered at the $K$-points, whereas in multilayers, they shift to the $Q$-points, midway between the $\Gamma$ and $K$ points. In this study, we conduct magnetotransport experiments to measure the occupation in the $Q$ and $K$ valleys in fourlayer molybdenum disulfide (MoS$_2$). We demonstrate electrostatic tunability of the conduction band edge by combining our experimental results with a hybrid $k\cdot p$ tight-binding model that accounts for interlayer screening effects in a self-consistent manner. Furthermore, we extend our model to bilayer and trilayer MoS$_2$, reconciling prior experimental results and quantifying the tunable range of band edges in atomically thin TMDs.

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arXiv2024

Interlayer dislocations in multilayer and bulk MoS${}_2$

Dislocations in van der Waals materials are linear defects confined to the interfaces between consecutive stoichiometric monolayers of a bulk layered crystal. Here, we present a mesoscale model for the description of interlayer dislocations in thin films of transition metal dichalcogenides. Taking 2H-MoS${}_2$ as a representative material, we compute the dependence of the dislocation energy on the film thickness, from few-layer MoS$_2$ to the bulk crystal, and analyse the strain field in the layers surrounding a dislocation. We also analyse the influence of strain field on the band edge profiles for electrons and holes, and conclude that the resulting energy profiles are incapable of localising charge carriers, in particular at room temperature.

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arXiv2024

Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics

Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adjacent polarization domains with reversed built-in electric fields, are able to host two-dimensional electrons and holes with an areal density reaching $\sim 10^{13} {\rm cm}^{-2}$. Our modelling suggests that n-doped twin boundaries have a more promising binding energy than p-doped ones, whereas hole accumulation is stable at external surfaces of a twinned film. We also propose that assembling pairs of mono-twin films with a `magic' twist angle $\theta^*$ that provides commensurability between the moir\'e pattern at the interface and the accumulated carrier density, should promote a regime of strongly correlated states of electrons, such as Wigner crystals, and we specify the values of $\theta^*$ for homo- and heterostructures of various TMDs.

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arXiv2023

Competition of moir\'e network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures

Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moir\'e superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moir\'e superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $\theta \sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks.

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arXiv2023

Dimensionality crossover for moir\'e excitons in twisted bilayers of anisotropic two-dimensional semiconductors

We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moir\'e patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in [Phys. Rev. B 105, 235421 (2022)], and leveraging the scale separation between the moir\'e lengthscale and the exciton Bohr radii, we introduce a continuous model for excitons that incorporates the spatial variation of their binding energies. Our zone-folding calculations reveal a dimensionality crossover for the exciton states, driven by the combined dispersion- and moir\'e potential anisotropies, from quantum-dot-like (0D) lattices at twist angles $\theta<\theta_*$, to quantum-wire-like (1D) arrays at $\theta>\theta_*$, with crossover angle $\theta_*=4^\circ$. We identify clear signatures of this dimensionality crossover in the twist angle dependence of the excitonic absorption spectra, which allows experimental verification of our theoretical results through standard optical measurements. Our results establish two-dimensional anisotropic moir\'e semiconductors as versatile solid-state platforms for exploring bosonic correlations across different dimensionalities.

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arXiv2022

Moir\'e band structures of twisted phosphorene bilayers

We report on the theoretical electronic spectra of twisted phosphorene bilayers exhibiting moir\'e patterns, as computed by means of a continuous approximation to the moir\'e superlattice Hamiltonian. Our model is constructed by interpolating between effective $\Gamma$-point conduction- and valence-band Hamiltonians for the different stacking configurations approximately realized across the moir\'e supercell, formulated on symmetry grounds. We predict the realization of three distinct regimes for $\Gamma$-point electrons and holes at different twist angle ranges: a Hubbard regime for small twist angles $\theta < 2^\circ$, where the electronic states form arrays of quantum-dot-like states, one per moir\'e supercell; a Tomonaga-Luttinger regime at intermediate twist angles $2^\circ < \theta \lesssim 10^\circ$, characterized by the appearance of arrays of quasi-1D states; and finally, a ballistic regime at large twist angles $\theta \gtrsim 10^\circ$, where the band-edge states are delocalized, with dispersion anisotropies modulated by the twist angle. Our method correctly reproduces recent results based on large-scale ab initio calculations at a much lower computational cost, and with fewer restrictions on the twist angles considered.

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arXiv2020

Theory of moir\'e localized excitons in transition-metal dichalcogenide heterobilayers

Transition-metal dichalcogenide heterostructures exhibit moir\'e patterns that spatially modulate the electronic structure across the material's plane. For certain material pairs, this modulation acts as a potential landscape with deep, trigonally symmetric wells capable of localizing interlayer excitons, forming periodic arrays of quantum emitters. Here, we study these moir\'e localized exciton states and their optical properties. By numerically solving the two-body problem for an interacting electron-hole pair confined by a trigonal potential, we compute the localized exciton spectra for different pairs of materials. We derive optical selection rules for the different families of localized states, each belonging to one of the irreducible representations of the potential's symmetry group $C_{3v}$, and numerically estimate their polarization-resolved absorption spectra. We find that the optical response of localized moir\'e interlayer excitons is dominated by states belonging to the doubly-degenerate $E$ irreducible representation. Our results provide new insights into the optical properties of artificially confined excitons in two-dimensional semiconductors.

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