arXiv subjects

Isabella Gierz

Publications and source records attributed to Isabella Gierz.

At least 19 recordsLinked to original sources

arXiv2026

Ultrafast signatures of Dirac / flat-band hybrid states from time-resolved ARPES

Hybridization of highly itinerant Dirac electrons with localized flat-band states is predicted to yield emergent phenomena such as exotic heavy-fermion behaviour. Epitaxial graphene on two-dimensional adsorbate structures on SiC(0001), which host flat bands, offers a promising platform to explore these effects. However, direct experimental evidence of interlayer hybridization in such systems has so far been lacking. Here, we address this gap using time- and angle-resolved photoemission spectroscopy (trARPES) where interlayer hybridization manifests in three key observations: (1) accelerated Dirac-carrier relaxation arising from additional electronic and phononic decay channels provided by the flat-band subsystem, (2) transient charging of the Dirac cone enabled by direct optical excitation from the flat bands, and (3) ultrafast back-transfer of charge into the flat bands on timescales governed by the interlayer coupling strength. We further demonstrate that the degree of hybridization can be tuned via the atomic number of the atoms intercalated at the graphene-SiC interface, establishing a controllable platform for investigating exotic correlated ground states.

cond-mat.mtrl-sci↗

arXiv2026

Influence of twist angle on ultrafast charge separation in WS2-graphene heterostructures

Van der Waals (vdW) heterostructures, formed by stacking two-dimensional materials, offer highly tunable electronic and optical properties, with the twist angle between layers acting as a critical tuning parameter. While its impact on moir\'e patterns, band structure, and correlated states is well-established, the influence of twist angle on ultrafast charge transfer remains controversial. Here, we employ time- and angle-resolved photoemission spectroscopy (trARPES) to directly probe ultrafast charge transfer in epitaxially grown WS\textsubscript{2}-graphene heterostructures with twist angles of 0$^{\circ}$ and 30$^{\circ}$. Upon photoexcitation at $\hbar\omega = 3.1\,\mathrm{eV}$, we observe efficient charge separation at 0$^{\circ}$, while at 30$^{\circ}$, electron and hole transfer occur at similar rates. Our results highlight the crucial role of the twist angle in controlling charge separation efficiency, offering valuable insights for designing vdW heterostructures for applications in photovoltaics and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2026

Influence of sulphur vacancies on ultrafast charge separation in WS$_2$-graphene heterostructures

Understanding how defects influence charge separation in WS$_2$-graphene heterostructures is crucial for future applications in light harvesting and detection. Previous studies have reported widely varying lifetimes for the charge-separated state, all supposedly linked to electron trapping at sulphur vacancies. The exact impact of these defects, however, has remained unclear. Here, we deliberately introduce sulphur vacancies by annealing the heterostructures at high temperatures in ultrahigh vacuum. Angle-resolved photoemission spectroscopy (ARPES) reveals that these vacancies modify both the band alignment and doping level of the heterostructure. Time-resolved ARPES (trARPES) further shows that increasing the sulphur vacancy concentration prolongs the lifetime of electrons in the WS$_2$ conduction band but shortens the lifetime of the charge-separated state. Guided by model calculations, we attribute this behaviour to shifts in the energy alignment between sulphur vacancy states and graphene's Dirac point, combined with a reduced excitonic absorption. The model also yields a transfer time for electrons tunneling from sulphur vacancies into graphene's Dirac cone of $\sim$4ps, consistent with our trARPES measurements. Our study clarifies the role of sulphur vacancies in WS$_2$-graphene heterostructures, further improving our microscopic understanding of charge dynamics for future optoelectronic applications.

cond-mat.mes-hall↗

arXiv2025

Influence of doping on non-equilibrium carrier dynamics in graphene

Controlling doping is key to optimizing graphene for high-speed electronic and optoelectronic devices. However, its impact on non-equilibrium carrier lifetimes remains debated. Here, we systematically tune the doping level of quasi-freestanding epitaxial graphene on SiC(0001) via potassium deposition and probe its ultrafast carrier dynamics directly in the band structure using time- and angle-resolved photoemission spectroscopy (trARPES). We find that increased doping lowers both the peak electronic temperature and the cooling rate of Dirac carriers, which we attribute to higher electronic heat capacity and reduced phonon emission phase space. Comparing quasi-freestanding graphene with graphene on a carbon buffer layer reveals faster relaxation in the latter, likely due to additional phonon modes being available for heat dissipation. These findings offer new insights for optimizing graphene in electronic and photonic technologies.

cond-mat.mes-hall↗

arXiv2025

Influence of excitation energy on microscopic quantum pathways for ultrafast charge transfer in van der Waals heterostructures

Efficient charge separation in van der Waals (vdW) heterostructures is crucial for optimizing light harvesting and detection applications. However, precise control over the microscopic pathways governing ultrafast charge transfer remains an open challenge. These pathways are intrinsically linked to charge transfer states with strongly delocalized wave functions that appear at various momenta in the Brillouin zone. Here, we use time- and angle-resolved photoemission spectroscopy (trARPES) to investigate the possibility of steering carriers through specific charge transfer states in a prototypical WS\textsubscript{2}-graphene heterostructure. By selectively exciting electron-hole pairs at the K-point (A-exciton resonance) and close to the Q-point (C-exciton resonance) of WS\textsubscript{2} with different pump photon energies, we find that charge separation is faster at higher excitation energies. This behavior is attributed to the fact that absorption at the C-exciton resonance generates electron-hole populations at energies well above the direct band gap. The resulting elevated carrier temperatures open an additional, highly efficient charge-transfer channel for holes in the WS\textsubscript{2} valence band, leading to an overall acceleration of interlayer hole transfer for C-exciton excitation. The microscopic insights gained in this work can be leveraged to optimize the performance of vdW heterostructures in optoelectronic devices.

cond-mat.mes-hall↗

arXiv2024

k-resolved ultrafast light-induced band renormalization in monolayer WS$_2$ on graphene

Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS$_2$ on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization including a substantial reduction of the transient band gap that is in good quantitative agreement with our {\it ab initio} theory that reveals the importance of both intrinsic WS$_2$ and extrinsic substrate contributions to the transient band structure of monolayer WS$_2$. Our findings not only deepen the fundamental understanding of band structure dynamics in two-dimensional materials but also offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene.

cond-mat.mtrl-sci↗

arXiv2024

Non-equilibrium carrier dynamics and band structure of graphene on 2D tin

Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered Sn $(1\times1)$ structure on the SiC surface with quasi-freestanding graphene on top. While the electronic properties of the individual layers have been studied in the past, emerging phenomena arising from possible inter-layer interactions between the 2D\,Sn layer and graphene remain unexplored. We use time- and angle-resolved photoemission spectroscopy to reveal a surprisingly short-lived non-equilibrium carrier distribution inside the Dirac cone of Sn-intercalated graphene. Further, we find that the graphene $π$-band exhibits a transient increase in binding energy that we attribute to charging of the graphene layer with holes. We interpret our results with support from density functional theory calculations of the graphene - 2D\,Sn heterostructure that reveal a substantial hybridization between the graphene $π$-bands and Sn states, providing a channel for efficient ultrafast charge transfer between the layers. Our results on the graphene - 2D\,Sn model system are expected to trigger similar investigations on related heterostructures obtained by intercalation of epitaxial graphene. Regarding the huge choice of materials that have been successfully intercalated in the past, we believe that the interlayer interactions revealed in the present work only represent the tip of the iceberg with many fascinating emerging phenomena to be discovered in the near future.

cond-mat.mes-hall↗

arXiv2024

Direct evidence for efficient carrier multiplication in the topological insulator Bi$_2$Se$_3$

Carrier multiplication (CM), where the absorption of a single photon results in the generation of several electron-hole pairs via impact ionization, plays a pivotal role in the quest for enhancing the performance of solar cells beyond the Shockley-Queisser limit. The combination of its narrow bandgap relative to the photon energy of visible light, along with its low phonon frequencies that hinder efficient energy dissipation into phonons, makes the topological insulator Bi$_2$Se$_3$ an optimal candidate material for efficient CM. Here we use time- and angle-resolved photoemission spectroscopy (trARPES) to trace the number of electron-hole pairs after photoexcitation of Bi$_2$Se$_3$ with visible pump pulses at $\hbarω=2$ eV. We find that both the number of electrons inside the conduction band as well as the number of holes inside the valence band keep increasing long after the pump pulse is gone, providing direct evidence for CM. We also analyze the transient band structure as well as the hot carrier dynamics inside the conduction band, providing a complete picture of the non-equilibrium carrier dynamics in photoexcited Bi$_2$Se$_3$ which can now serve as a basis for novel optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2023

Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures

Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters.

cond-mat.mtrl-sci↗

arXiv2016

Electronic-structural Dynamics in Graphene

We review our recent time- and angle-resolved photoemission spectroscopy experiments, which measure the transient electronic structure of optically driven graphene. For pump photon energies in the near infrared ($\hbarω_{\text{pump}}=950$meV) we have discovered the formation of a population-inverted state near the Dirac point, which may be of interest for the design of THz lasing devices and optical amplifiers. At lower pump photon energies ($\hbarω_{\text{pump}}<400$meV), for which interband absorption is not possible in doped samples, we find evidence for free carrier absorption. In addition, when mid-infrared pulses are made resonant with an infrared-active in-plane phonon of bilayer graphene ($\hbarω_{\text{pump}}=200$meV), a transient enhancement of the electron-phonon coupling constant is observed, providing interesting perspective for experiments that report light-enhanced superconductivity in doped fullerites in which a similar lattice mode was excited. All the studies reviewed here have important implications for applications of graphene in optoelectronic devices and for the dynamical engineering of electronic properties with light.

cond-mat.mtrl-sci↗

arXiv2016

Probing carrier dynamics in photo-excited graphene with time-resolved ARPES

The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for many optoelectronic applications, ranging from light harvesting to optical amplification. Here we measure the formation and relaxation of the photo-generated non-thermal carrier distribution in monolayer graphene with time- and angle-resolved photoemission spectroscopy. Using sub 10fs pulses we identify impact ionization as the primary scattering channel, which dominates the dynamics for the first 25fs after photo-excitation. Auger recombination is found to set in once the carriers have accumulated at the Dirac point with time scales between 100 and 250fs, depending on the number of non-thermal carriers. Our observations help in gauging graphene's potential as a solar cell and TeraHertz lasing material.

cond-mat.mtrl-sci↗

arXiv2014

Phonon-pump XUV-photoemission-probe in graphene: evidence for non-adiabatic heating of Dirac carriers by lattice deformation

We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV) pulses, we measure the response of the Dirac electrons near the K-point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E1u vibration is driven, which we use to explain the anomalous dynamics observed in the experiment.

cond-mat.mes-hall↗

arXiv2014

Population Inversion in Monolayer and Bilayer Graphene

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.

cond-mat.mtrl-sci↗

arXiv2013

Snapshots of non-equilibrium Dirac carrier distributions in graphene

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at the Dirac point may allow for population inversion and lasing at arbitrarily long wavelengths. Furthermore, efficient carrier multiplication by impact ionization has been discussed in the context of light harvesting applications. However, all these effects are difficult to test quantitatively by measuring the transient optical properties alone, as these only indirectly reflect the energy and momentum dependent carrier distributions. Here, we use time- and angle-resolved photoemission spectroscopy with femtosecond extreme ultra-violet (EUV) pulses at 31.5 eV photon energy to directly probe the non-equilibrium response of Dirac electrons near the K-point of the Brillouin zone. In lightly hole-doped epitaxial graphene samples, we explore excitation in the mid- and near-infrared, both below and above the minimum photon energy for direct interband transitions. While excitation in the mid-infrared results only in heating of the equilibrium carrier distribution, interband excitations give rise to population inversion, suggesting that terahertz lasing may be possible. However, in neither excitation regime do we find indication for carrier multiplication, questioning the applicability of graphene for light harvesting. Time-resolved photoemission spectroscopy in the EUV emerges as the technique of choice to assess the suitability of new materials for optoelectronics, providing quantitatively accurate measurements of non-equilibrium carriers at all energies and wavevectors.

cond-mat.mes-hall↗

arXiv2011

Spin and angular resolved photoemission experiments on epitaxial graphene

Our recently reported spin and angular resolved photoemission (SARPES) results on an epitaxial graphene monolayer on SiC(0001) suggested the presence of a large Rashba-type spin splitting of Δk=(0.030+-0.005)1/A [1]. Although this value was orders of magnitude larger than predicted theoretically, it could be reconciled with the line width found in conventional spin-integrated high resolution angular resolved photoemission spectroscopy (ARPES) data. Here we present novel measurements for a hydrogen intercalated quasi free-standing graphene monolayer on SiC(0001) that reveal a spin polarization signal that - when interpreted in terms of the Rashba-Bychkov effect [2,3] - corresponds to a spin splitting of Δk=(0.024+-0.005)1/A. This splitting is significantly larger than the half width at half maximum of spin-integrated high resolution ARPES measurements which is a strong indication that the measured polarization signal does not originate from a Rashba-type spin splitting of the graphene pi-bands as we suggested in our previous report [1].

cond-mat.mtrl-sci↗

arXiv2010

Tuning the spin texture in binary and ternary surface alloys on Ag(111)

Recently, a giant spin splitting has been observed in surface alloys on noble metal (111) surfaces as a result of a strong structural modification at the surface as well as the large atomic spin-orbit interaction (SOI) of the alloy atoms. These surface alloys are an ideal playground to manipulate both the size of the spin splitting as well as the position of the Fermi level as it is possible to change the atomic SOI as well as the relaxation by varying alloy atoms and substrates. Using spin- and angle-resolved photoemission spectroscopy in combination with quantitative low energy electron diffraction we have studied the mixed binary Bi(x)Sb(1-x)/Ag(111) and the mixed ternary Bi(x)Pb(y)Sb(1-x-y)/Ag(111) surface alloys where we observed a continuous evolution of the band structure with x and y.

cond-mat.mtrl-sci↗

arXiv2010

Illuminating the dark corridor in graphene: polarization dependence of angle-resolved photoemission spectroscopy on graphene

We have used s- and p-polarized synchrotron radiation to image the electronic structure of epitaxial graphene near the K-point by angular resolved photoemission spectroscopy (ARPES). Part of the experimental Fermi surface is suppressed due to the interference of photoelectrons emitted from the two equivalent carbon atoms per unit cell of graphene's honeycomb lattice. Here we show that by rotating the polarization vector, we are able to illuminate this 'dark corridor' indicating that the present theoretical understanding is oversimplified. Our measurements are supported by first-principles photoemission calculations, which reveal that the observed effect persists in the low photon energy regime.

cond-mat.mtrl-sci↗

arXiv2010

Electronic decoupling of an epitaxial graphene monolayer by gold intercalation

The application of graphene in electronic devices requires large scale epitaxial growth. The presence of the substrate, however, usually reduces the charge carrier mobility considerably. We show that it is possible to decouple the partially sp3-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp2-hybridized graphene layer with improved electronic properties.

cond-mat.mtrl-sci↗