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Isabelle V. Sprave

Publications and source records attributed to Isabelle V. Sprave.

2 recordsLinked to original sources

Phononic Bragg Reflectors for Thermal Insulation of Scalable Cryogenic Control Electronics from Qubits

Scaling solid-state architectures to the millions of qubits required for utility-scale quantum computing could benefit from the integration of control electronics in the immediate vicinity of the quantum layer. However, lithographically fabricated solid-state qubits perform best at temperatures well below 1 K, where available cooling power is limited, whereas the control electronics dissipate substantial power and therefore require the higher cooling power available at elevated temperatures. To address this challenge, we propose a cryopackaging concept that uses broadband phononic Distributed Bragg Reflectors (DBRs) as a thermal barrier between cryoelectronics and the qubit chip. As an experimental realization of this concept, we fabricate and characterize Ta/SiO$_2$ DBR structures. In this architecture, the DBR is intended to provide mechanical support for superconducting vias while offering substantially better thermal insulation than typical bulk materials. For a 600-nm-thick DBR consisting of 10 Ta/SiO$_2$ bilayers, we obtain a thermal conduction below 1 mW/cm$^2$ from 1.5 K to 100 mK. In a centimeter-scale architecture, this level of isolation is compatible with Watt-level cooling power for nearby electronics while maintaining a qubit temperature around 100 mK in commercially available dilution refrigerators.

quant-ph

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures.

physics.app-ph