arXiv subjects

Isaiah A. Moses

Publications and source records attributed to Isaiah A. Moses.

5 recordsLinked to original sources

arXiv2026

Multi-modal machine learning analysis of GaSe molecular beam epitaxy growth conditions

Autonomous synthesis platforms integrating machine learning with in situ diagnostics have the potential to revolutionize thin-film growth by enabling real-time process optimization and reducing the need for manual tuning. However, their application to molecular beam epitaxy (MBE) remains underdeveloped. Here, we present a machine learning-guided framework for MBE growth of GaSe films, leveraging reflection high-energy electron diffraction (RHEED) as an in situ diagnostic alongside ex situ characterization via X-ray diffraction and atomic force microscopy. Unsupervised learning on RHEED patterns reveals a well-defined boundary between high- and low-quality samples, capturing physically meaningful features. Mutual information analysis shows a strong correlation between RHEED embeddings and rocking curve full-width at half-maximum (fwhm), while the correlation with AFM root-mean-square (RMS) roughness is weak. Among key growth conditions, growth rate most strongly influences fwhm, whereas the Se/Ga flux ratio primarily affects RMS roughness and the RHEED embeddings. Supervised learning models trained to predict fwhm and RMS roughness demonstrate moderate accuracy, with significant improvement achieved by incorporating RHEED embeddings. Furthermore, anomaly detection via residual analysis in supervised learning aligns well with unsupervised classification from RHEED, reinforcing the reliability of the predictive models. This study establishes a data-driven framework for machine learning-assisted MBE, paving the way for real-time process control and accelerated optimization of thin-film synthesis.

cond-mat.mtrl-sci↗

arXiv2025

Cross-Modal Characterization of Thin Film MoS$_2$ Using Generative Models

The growth and characterization of materials using empirical optimization typically requires a significant amount of expert time, experience, and resources. Several complementary characterization methods are routinely performed to determine the quality and properties of a grown sample. Machine learning (ML) can support the conventional approaches by using historical data to guide and provide speed and efficiency to the growth and characterization of materials. Specifically, ML can provide quantitative information from characterization data that is typically obtained from a different modality. In this study, we have investigated the feasibility of projecting the quantitative metric from microscopy measurements, such as atomic force microscopy (AFM), using data obtained from spectroscopy measurements, like Raman spectroscopy. Generative models were also trained to generate the full and specific features of the Raman and photoluminescence spectra from each other and the AFM images of the thin film MoS$_2$. The results are promising and have provided a foundational guide for the use of ML for the cross-modal characterization of materials for their accelerated, efficient, and cost-effective discovery.

cond-mat.mtrl-sci↗

arXiv2024

Transfer Learning for Multi-material Classification of Transition Metal Dichalcogenides with Atomic Force Microscopy

Deep learning models are widely used for the data-driven design of materials based on atomic force microscopy (AFM) and other scanning probe microscopy. These tools enhance efficiency in inverse design and characterization of materials. However, limited and imbalanced experimental materials data typically available is a major challenge. Also important is the need to interpret trained models, which have typically been complex enough to be uninterpretable by humans. Here, we present a systemic evaluation of transfer learning strategies to accommodate low-data scenarios in materials synthesis and a model latent feature analysis to draw connections to the human-interpretable characteristics of the samples. Our models show accurate predictions in five classes of transition metal dichalcogenides (TMDs) (MoS$_2$, WS$_2$, WSe$_2$, MoSe$_2$, and Mo-WSe$_2$) with up to 89$\%$ accuracy on held-out test samples. Analysis of the latent features reveals a correlation with physical characteristics such as grain density, DoG blob, and local variation. The transfer learning optimization modality and the exploration of the correlation between the latent and physical features provide important frameworks that can be applied to other classes of materials beyond TMDs to enhance the models' performance and explainability which can accelerate the inverse design of materials for technological applications.

cond-mat.mtrl-sci↗

arXiv2024

Crystal Growth Characterization of WSe$_2$ Thin Film Using Machine Learning

Materials characterization remains a labor-intensive process, with a large amount of expert time required to post-process and analyze micrographs. As a result, machine learning has become an essential tool in materials science, including for materials characterization. In this study, we perform an in-depth analysis of the prediction of crystal coverage in WSe$_2$ thin film atomic force microscopy (AFM) height maps with supervised regression and segmentation models. Regression models were trained from scratch and through transfer learning from a ResNet pretrained on ImageNet and MicroNet to predict monolayer crystal coverage. Models trained from scratch outperformed those using features extracted from pretrained models, but fine-tuning yielded the best performance, with an impressive 0.99 $R^2$ value on a diverse set of held-out test micrographs. Notably, features extracted from MicroNet showed significantly better performance than those from ImageNet, but fine-tuning on ImageNet demonstrated the reverse. As the problem is natively a segmentation task, the segmentation models excelled in determining crystal coverage on image patches. However, when applied to full images rather than patches, the performance of segmentation models degraded considerably, while the regressors did not, suggesting that regression models may be more robust to scale and dimension changes compared to segmentation models. Our results demonstrate the efficacy of computer vision models for automating sample characterization in 2D materials while providing important practical considerations for their use in the development of chalcogenide thin films.

cond-mat.mtrl-sci↗

arXiv2024

Quantitative analysis of MoS$_2$ thin film micrographs with machine learning

Isolating the features associated with different materials growth conditions is important to facilitate the tuning of these conditions for effective materials growth and characterization. This study presents machine learning models for classifying atomic force microscopy (AFM) images of thin film MoS$_2$ based on their growth temperatures. By employing nine different algorithms and leveraging transfer learning through a pretrained ResNet model, we identify an effective approach for accurately discerning the characteristics related to growth temperature within the AFM micrographs. Robust models with up to 70% test accuracies were obtained, with the best performing algorithm being an end-to-end ResNet fine-tuned on our image domain. Class activation maps and occlusion attribution reveal that crystal quality and domain boundaries play crucial roles in classification, with models exhibiting the ability to identify latent features beyond human visual perception. Overall, the models demonstrated high accuracy in identifying thin films grown at different temperatures despite limited and imbalanced training data as well as variation in growth parameters besides temperature, showing that our models and training protocols are suitable for this and similar predictive tasks for accelerated 2D materials characterization.

cond-mat.mtrl-sci↗