arXiv subjects

Iva Plutnarova

Publications and source records attributed to Iva Plutnarova.

3 recordsLinked to original sources

arXiv2026

Optical switching of magnetic order in few-layer CrSBr

Manipulating magnetism with light is crucial for both fundamental understanding and technological advancements of information storage devices. The layered antiferromagnet CrSBr, part of the recently emerging class of two-dimensional van der Waals magnets, offers a unique path towards optical control of magnetism via magneto-excitons, which allow optical readout of the spin alignment and also provide a strong absorption channel. Here, we use exciton absorption and photoluminescence to demonstrate optical switching of the magnetic order in bi- and trilayer CrSBr. Using a continuous-wave laser with a power as low as a few microwatts at near-critical external magnetic fields, we demonstrate both local and remote switching of the magnetic configuration in extended lateral domains and further employ this mechanism to deterministically prepare the zero-field magnetic configuration. Our results establish optical switching as a useful means of controlling magnetism in CrSBr, with potential applications in magneto-optoelectronic devices.

cond-mat.mes-hall↗

arXiv2026

Bulk and surface excitons in the van der Waals magnet CrSBr: Magneto-optical studies to 55 tesla

In thin layers of the 2D magnetic semiconductor CrSBr, very recent studies identified two distinct band-edge optical resonances, believed to arise from distinguishable bulk and surface excitons. This behavior reportedly originates from the highly anisotropic nature of CrSBr -- particularly in its antiferromagnetic state -- where excitons are effectively confined within individual monolayers, such that excitons in the two surface layers "see" a different local dielectric environment and have a lower resonance energy. To explore this scenario, here we investigate optical absorption properties of few-layer CrSBr in magnetic fields. In addition to the fundamental exciton resonance at ~1.36eV, we observe an absorption resonance ~20 meV lower in energy. Compared to the fundamental transition, this resonance redshifts only half as much in small magnetic fields that induce ferromagnetic order, while in high fields to 55T it exhibits a smaller diamagnetic shift. Both behaviors point to distinguishable populations of bulk and surface excitons in CrSBr.

cond-mat.mes-hall↗

arXiv2026

A Sliding Ferroelectric Resonant Tunnel Junction

Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional FTJs has been hindered by high coercive voltages, low readout currents, limited cycling endurance, and significant device-to-device variability. Here, we overcome these bottlenecks by introducing the sliding ferroelectric resonant tunnel (SFeRT) junction, integrating three cooperative mechanisms: (i) spontaneous interfacial polarization of atomically thin, depolarization-resilient barriers; (ii) superlubric sliding of shear-solitons, enabling ultra-low-friction, wear-free switching; and (iii) momentum-conserving, elastic resonant tunneling between lattice-aligned graphitic electrodes, providing sensitive readouts at both positive and negative biases. We demonstrate nanometer-scale SFeRT junctions using polar polytypes of hexagonal boron nitride (hBN) or transition metal dichalcogenides (TMDs) as barriers, achieving configurable writing voltages below $0.5$ V and tunable reading biases under $0.1$ V. These devices yield current densities exceeding $50$ nA $μ$m$^{-2}$, with a robust room-temperature ON/OFF ratio $> 7$. The crystalline and polarization integrity of sliding van der Waals (vdW) polytypes, down to the atomically thin limit, ensures exceptional device uniformity and performance that remains scalable down to sub-$0.1$ $μ$m$^{2}$ footprints. Furthermore, we provide a predictive model for SFeRT performance across diverse doping levels, temperatures, electrodes, and polytype configurations. Integrated within a Superlubric Array of Polytypes (SLAP) architecture, SFeRT junctions enable switching energies below $1$ fJ, establishing a scalable and durable foundation for low-energy ``slidetronic'' logic and memory.

cond-mat.other↗