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Ivan A. Yakovlev

Publications and source records attributed to Ivan A. Yakovlev.

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Polymorph Engineering of the Layered Rare-Earth Magnet GdAlGe

The recent advances in research on layered magnets have established them as invaluable materials for spintronic applications and precursors to 2D magnets. The problem is that the number of such materials available for experimentation is still low. To tackle the problem, one may employ phase engineering; in particular, the interplay between the phase stability and dimensionality provides great opportunities for design of layered magnets. Here, this interrelation is harnessed to produce epitaxial films of an overlooked layered polymorph of GdAlGe. The compound is formed by alternating triangular Gd and honeycomb AlGe lattices. It is stable in ultrathin films, up to 5 monolayers. In thicker films, an additional unwanted phase emerges. The structural quality of the ultrathin films is witnessed by electron and X-ray diffraction as well as electron microscopy. Magnetization measurements detect an anisotropic ferromagnetic state. The GdAlGe magnetism is corroborated by a study of electron transport revealing the anomalous Hall effect and negative magnetoresistance. The material is naturally integrated with Ge, a technological semiconductor, which should facilitate applications. The present study can serve as a blueprint for design of layered magnets via polymorph engineering.

cond-mat.mtrl-sci

Competing Magnetic States in the Candidate Altermagnet GdAlGe

Altermagnetism, a newly discovered magnetic order, combines zero net magnetization with non-relativistic spin splitting of electronic bands. Its ability to utilize the advantages of both antiferromagnets and ferromagnets is highly promising for spintronic applications. Currently, the merge of altermagnetism and weak ferromagnetism in a single material excites significant interest as it provides additional control mechanisms over material properties. However, the role of dimensionality in this interplay is yet to be explored. Here, we study magnetism and electron transport in epitaxial films of the candidate altermagnet GdAlGe ranging from bulklike to a single monolayer. The films exhibit the anomalous Hall effect and negative magnetoresistance. In contrast to altermagnetic GdAlSi, the candidate altermagnet GdAlGe demonstrates an admixture of the ferromagnetic state which contribution increases as the system approaches the 2D limit. The coexistence of the magnetic states induces technologically important intrinsic exchange bias. The present work underpins future studies and applications of nanoscale altermagnets.

cond-mat.mtrl-sci