arXiv subjects

Ivan Scivetti

Publications and source records attributed to Ivan Scivetti.

5 recordsLinked to original sources

arXiv2025

DL_POLY 5: Calculation of system properties on the fly for very large systems via massive parallelism

Modelling has become a third distinct line of scientific enquiry, alongside experiments and theory. Molecular dynamics (MD) simulations serve to interpret, predict and guide experiments and to test and develop theories. A major limiting factor of MD simulations is system size and in particular the difficulty in handling, storing and processing trajectories of very large systems. This limitation has become significant as the need to simulate large system sizes of the order of billions of atoms and beyond has been steadily growing. Examples include interface phenomena, composite materials, biomaterials, melting, nucleation, atomic transport, adhesion, radiation damage and fracture. More generally, accessing new length and energy scales often brings qualitatively new science, but this has currently reached a bottleneck in MD simulations due to the traditional methods of storing and post-processing trajectory files. To address this challenge, we propose a new paradigm of running MD simulations: instead of storing and post-processing trajectory files, we calculate key system properties on-the-fly. Here, we discuss the implementation of this idea and on-the-fly calculation of key system properties in the general-purpose MD code, DL_POLY. We discuss code development, new capabilities and the calculation of these properties, including correlation functions, viscosity, thermal conductivity and elastic constants. We give examples of these on-the-fly calculations in very large systems. Our developments offer a new way to run MD simulations of large systems efficiently in the future.

cond-mat.mtrl-sci↗

arXiv2020

Reactive molecular dynamics at constant pressure via non-reactive force fields: extending the Empirical Valence Bond method to the isothermal-isobaric ensemble

The Empirical Valence Bond (EVB) method offers a suitable framework to obtain reactive potentials through the coupling of non-reactive force fields. However, most of the implemented functional forms for the coupling terms depend on complex spatial coordinates, which precludes the computation of the stress tensor for condensed phase systems and prevents the possibility to carry out EVB molecular dynamics in the isothermal-isobaric (NPT) ensemble. In this work, we make use of coupling terms that depend on the energy gaps, defined as the energy differences between the participating non-reactive force fields, and derive an expression for the EVB stress tensor suitable for computations. Implementation of this new methodology is tested for a model of a single reactive malonaldehyde solvated in non-reactive water. Computed densities and classical probability distributions in the NPT ensemble reveals a negligible role of the reactive potential in the limit of low concentrated solutions, thus corroborating the validity of standard approximations customarily adopted for EVB simulations.

physics.chem-ph↗

arXiv2017

Frontier molecular orbitals of single molecules adsorbed on thin insulating films supported by a metal substrate: A simplified density functional theory approach

We present a simplified density functional theory (DFT) method to com- pute vertical electron and hole attachment energies to frontier orbitals of molecules absorbed on insulating films supported by a metal substrate. The adsorbate and the film is treated fully within DFT, whereas the metal is treated implicitly by a perfect conductor model. As illustrated for a pentacene molecule adsorbed on NaCl films sup- ported by a Cu substrate, we find that the computed energy gap between the highest and lowest occupied molecular orbitals - HOMO and LUMO -from the vertical attach- ment energies increases with the thickness of the insulating film, in agreement with experiments. This increase of the gap can be rationalized in a simple dielectric model with parameters determined from DFT calculations and is found to be dominated by the image interaction with the metal. However, this model overestimates the down- ward shift of the energy gap in the limit of an infinitely thick film. This work provides a new and efficient strategy to extend the use of density functional theory to the study of charging and discharging of large molecular absorbates on insulating films supported by a metal substrate.

cond-mat.mes-hall↗

arXiv2014

Investigating Atomic Contrast in Atomic Force Microscopy and Kelvin Probe Force Microscopy on Ionic Systems using Functionalized Tips

Noncontact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM) have become important tools for nanotechnology; however, their contrast mechanisms on the atomic scale are not entirely understood. Here we used chlorine vacancies in NaCl bilayers on Cu(111) as a model system to investigate atomic contrast as a function of applied voltage, tip height, and tip functionalization. We demonstrate that the AFM contrast on the atomic scale decisively depends on both the tip termination and the sample voltage. On the contrary, the local contact potential difference (LCPD) acquired with KPFM showed the same qualitative contrast for all tip terminations investigated, which resembled the contrast of the electric field of the sample. We find that the AFM contrast stems mainly from electrostatic interactions but its tip dependence cannot be explained by the tip dipole alone. With the aid of a simple electrostatic model and by density functional theory we investigate the underlying contrast mechanisms.

cond-mat.mes-hall↗

arXiv2013

The electrostatic interaction of an external charged system with a metal surface: a simplified density functional theory approach

As a first step to meet the challenge to calculate the electronic structure and total energy of charged states of atoms and molecules adsorbed on ultrathin-insulating films supported by a metallic substrate using density functional theory (DFT), we have developed a simplified new DFT scheme that only describes the electrostatic interaction of an external charged system with a metal surface. This purely electrostatic interaction is obtained from the assumption that the electron densities of the two fragments (charged system and metal surface) are non-overlapping and neglecting non-local exchange correlation effects such as the van der Waals interactions between the two fragments. In addition, the response of the metal surface to the electrostatic potential from the charged system is treated to linear order, whereas the charged system is treated fully within DFT. In particular, we consider the classical perfect conductor (PC) model for the metal response, although our formalism is not limited to this approximation. The successful computational implementation of this new methodology and the PC model is exemplified by the case of a Na$^{+}$ cation outside a metal surface.

cond-mat.mtrl-sci↗