arXiv subjects

Ivan V. Borzenets

Publications and source records attributed to Ivan V. Borzenets.

12 recordsLinked to original sources

arXiv2025

Electrical control of a Kondo spin screening cloud

Quantitative analysis of quantum many-body systems, consisting of numerous itinerant electrons that interact with localized spins or electrons, is a long-standing issue. The Kondo cloud, a quantum many-body object of conduction electrons that screens a single localized spin, is the building block of such strongly correlated electronic systems. While quantitative analysis of the Kondo cloud associated with a single magnetic impurity is well established for uniform conduction electrons, the fundamental properties of a deformed Kondo cloud influenced by conduction electrons with a modulated density of states remain unsolved. Here we report engineering of the Kondo cloud deformation by confining a part of the cloud into a quantum box called the Kondo box that mimics realistic material systems. We demonstrate quantitative control of the Kondo cloud by developing a way of tuning quantum interference in the box and monitoring the Kondo entanglement. The temperature dependence of the entanglement reveals counterintuitively that the cloud shape is altered mainly outside the box although the quantum interference in the box is tuned. Our work provides a way to simulate various strongly correlated systems by integrating the Kondo cloud, which is not possible in the current theoretical framework.

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arXiv2021

The Multi-terminal Inverse AC Josephson Effect

When a Josephson junction is exposed to microwave radiation, it undergoes the inverse AC Josephson effect - the phase of the junction locks to the drive frequency. As a result, the I-V curves of the junction acquire "Shapiro steps" of quantized voltage. If the junction has three or more superconducting contacts, coupling between different pairs of terminals must be taken into account and the state of the junction evolves in a phase space of higher dimensionality. Here, we study the multi-terminal inverse AC Josephson effect in a graphene sample with three superconducting terminals. We observe robust fractional Shapiro steps and correlated switching events, which can only be explained by considering the device as a completely connected Josephson network. We successfully simulate the observed behaviors using a modified two-dimensional RCSJ model. Our results suggest multi-terminal Josephson junctions are a playground to study highly-connected nonlinear networks with novel topologies.

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arXiv2018

Supercurrent Flow in Multi-Terminal Graphene Josephson Junctions

We investigate the electronic properties of ballistic planar Josephson junctions with multiple superconducting terminals. Our devices consist of monolayer graphene encapsulated in boron nitride with molybdenum-rhenium contacts. Resistance measurements yield multiple resonant features, which are attributed to supercurrent flow among adjacent and non-adjacent Josephson junctions. In particular, we find that superconducting and dissipative currents coexist within the same region of graphene. We show that the presence of dissipative currents primarily results in electron heating and estimate the associated temperature rise. We find that the electrons in encapsulated graphene are efficiently cooled through the electron-phonon coupling.

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arXiv2018

Supercurrent in Graphene Josephson Junctions with Narrow Trenches in the Quantum Hall Regime

Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.

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arXiv2018

Investigation of Supercurrent in the Quantum Hall Regime in Graphene Josephson Junctions

In this study, we examine multiple encapsulated graphene Josephson junctions to determine which mechanisms may be responsible for the supercurrent observed in the quantum Hall (QH) regime. Rectangular junctions with various widths and lengths were studied to identify which parameters affect the occurrence of QH supercurrent. We also studied additional samples where the graphene region is extended beyond the contacts on one side, making that edge of the mesa significantly longer than the opposite edge. This is done in order to distinguish two potential mechanisms: a) supercurrents independently flowing along both non-contacted edges of graphene mesa, and b) opposite sides of the mesa being coupled by hybrid electron-hole modes flowing along the superconductor/graphene boundary. The supercurrent appears suppressed in extended junctions, suggesting the latter mechanism.

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arXiv2016

Landau level evolution driven by band hybridization in mirror symmetry broken ABA-stacked trilayer graphene

Layer stacking and crystal lattice symmetry play important roles in the band structure and the Landau levels of multilayer graphene. ABA-stacked trilayer graphene possesses mirror-symmetry-protected monolayer-like and bilayer-like band structures. Broken mirror symmetry by a perpendicular electric field therefore induces hybridization between these bands and various quantum Hall phases emerge. We experimentally explore the evolution of Landau levels in ABA-stacked trilayer graphene under electric field. We observe a variety of valley and orbital dependent Landau level evolutions. These evolutions are qualitatively well explained by considering the hybridization between multiple Landau levels possessing close Landau level indices and the hybridization between every third Landau level orbitals due to the trigonal warping effect. These observations are consistent with numerical calculations. The combination of experimental and numerical analysis thus reveals the entire picture of Landau level evolutions decomposed into the monolayer- and bilayer-like band contributions in ABA-stacked trilayer graphene.

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arXiv2016

Critical current scaling in long diffusive graphene-based Josephson junctions

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.

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arXiv2015

Supercurrent in the quantum Hall regime

A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-carrying states in a QH region at magnetic fields as high as 2Tesla. The observation of supercurrent in the quantum Hall regime marks an important step in the quest for exotic topological excitations such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computations.

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arXiv2015

Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The electrical control of the valley current in the limit of zero conductivity allows non-dissipative induction of valley current from electric field and thus provides a significant contribution to the advancement of non-dissipative electronics.

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arXiv2012

Quantum Phase Transition in a Resonant Level Coupled to Interacting Leads

An interacting one-dimensional electron system, the Luttinger liquid, is distinct from the "conventional" Fermi liquids formed by interacting electrons in two and three dimensions. Some of its most spectacular properties are revealed in the process of electron tunneling: as a function of the applied bias or temperature the tunneling current demonstrates a non-trivial power-law suppression. Here, we create a system which emulates tunneling in a Luttinger liquid, by controlling the interaction of the tunneling electron with its environment. We further replace a single tunneling barrier with a double-barrier resonant level structure and investigate resonant tunneling between Luttinger liquids. For the first time, we observe perfect transparency of the resonant level embedded in the interacting environment, while the width of the resonance tends to zero. We argue that this unique behavior results from many-body physics of interacting electrons and signals the presence of a quantum phase transition (QPT). In our samples many parameters, including the interaction strength, can be precisely controlled; thus, we have created an attractive model system for studying quantum critical phenomena in general. Our work therefore has broadly reaching implications for understanding QPTs in more complex systems, such as cold atoms and strongly correlated bulk materials.

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arXiv2011

Single Phase Slip Limited Switching Current in 1-Dimensional Superconducting Al Nanowires

An Aluminum nanowire switches from superconducting to normal as the current is increased in an upsweep. The switching current (I_s) averaged over upsweeps approximately follows the depairing critical current (I_c) but falls below it. Fluctuations in I_s exhibit three distinct regions of behaviors and are non-monotonic in temperature: saturation well below the critical temperature T_c, an increase as T^{2/3} at intermediate temperatures, and a rapid decrease close to T_c. Heat dissipation analysis indicates that a single phase slip is able to trigger switching at low and intermediate temperatures, whereby the T^{2/3} dependence arises from the thermal activation of a phase slip, while saturation at low temperatures provides striking evidence that the phase slips by macroscopic quantum tunneling.

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arXiv2011

Retrapping Current, Self-Heating, and Hysteretic Current-Voltage Curves in Ultra-Narrow Superconducting Aluminum Nanowires

Hysteretic I-V (current-voltage) is studied in narrow Al nanowires. The nanowires have a cross section as small as 50 nm^2. We focus on the retapping current in a down-sweep of the current, at which a nanowire re-enters the superconducting state from a normal state. The retrapping current is found to be significantly smaller than the switching current at which the nanowire switches into the normal state from a superconducting state during a current up-sweep. For wires of different lengths, we analyze the heat removal due to various processes, including electronic and phonon processes. For a short wires 1.5 um in length, electronic thermal conduction is effective; for longer wires 10um in length, phonon conduction becomes important. We demonstrate that the measured retrapping current as a function of temperature can be quantitatively accounted for by the selfheating occurring in the normal portions of the nanowires to better than 20 % accuracy. For the phonon processes, the extracted thermal conduction parameters support the notion of a reduced phase-space below 3-dimensions, consistent with the phonon thermal wavelength having exceeded the lateral dimensions at temperatures below ~ 1.3K. Nevertheless, surprisingly the best fit was achieved with a functional form corresponding to 3-dimensional phonons, albeit requiring parameters far exceeding known values in the literature.

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