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Izhar

Publications and source records attributed to Izhar.

2 recordsLinked to original sources

Periodically Poled Aluminum Scandium Nitride Bulk Acoustic Wave Resonators and Filters for Communications in the 6G Era

Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling (k_t^2) to form filters with low insertion loss and high selectivity. However, both the Q and k_t^2 of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz. In this work, we utilized 4-layer AlScN periodically poled piezoelectric films (P3F) to construct high frequency (~17-18 GHz) resonators and filters. The resonator performance is studied over a range of device geometries, with the best resonator achieving a k_t^2 of 11.8% and a Q_p of 236.6 at the parallel resonance frequency (fp) of 17.9 GHz. These resulting figures of merit are ((FoM)_1=(k_t^2 Q)_p and (FoM_2=f_p(FoM)_1x10^-9) ) 27.9 and 500 respectively. These and the k_t^2 are significantly higher than previously reported An/AlScN-based resonators operating at similar frequencies. Fabricated 3-element and 6-element filters formed from these resonators demonstrated low insertion losses (IL) of 1.86 dB and 3.25 dB, and -3 dB bandwidths (BW) of 680 MHz (fractional BW of 3.9%) and 590 MHz (fractional BW of 3.3%) at ~17.4 GHz center frequency. The 3-element and 6-element filters achieved excellent linearity with in-band input third-order intercept point (IIP3) values of +36 dBm and +40 dBm, respectively, which are significantly higher than previously reported acoustic filters operating at similar frequencies.

physics.app-ph

Wideband, Efficient AlScN-Si Acousto-Optic Modulator in a Commercially Available Silicon Photonics Process

Acousto-optic integration offers numerous applications including low-loss microwave signal processing, nonreciprocal light propagation, frequency comb generation, and broadband acousto-optic modulation. State-of-the-art acousto-optic systems are mainly implemented entirely using in-house fabrication processes, which despite excellent performance typically suffer from low yield and are not compatible with mass production through foundry processes. Here, we demonstrate a highly efficient wideband acousto-optic modulator (AOM) implemented on a silicon photonics foundry process enabling high-yield low-cost mass production of AOMs with other photonic and electronic devices on the same substrate. In the reported structure, a 150 ${\mu}$m long AlScN-based acoustic transducer launches surface acoustic waves (SAW), which modulate the light passing through a silicon optical waveguide. A modulation efficiency of -18.3 dB over a bandwidth of 112 MHz is achieved, which to our knowledge is the highest reported efficiency and bandwidth combination among silicon based AOMs, resulting in about an order of magnitude $BW(V_{\pi}L)^{-1}$ figure-of-merit improvement compared to the state-of-the-art CMOS compatible AOMs. The monolithically integrated acousto-optic platform developed in this work will pave the way for low-cost, miniature microwave filters, true time delays, frequency combs, and other signal processors with the advanced functionality offered by foundry-integrated photonic circuits.

physics.optics