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J P Connolly

Publications and source records attributed to J P Connolly.

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Impact of MAPbI3 Phase Transitions on Solar Cell Performance

This paper presents a first step toward a pragmatic phenomenological multiscale approach to evaluate perovskite solar cell performance which determines material properties at the atomistic scale with first-principles calculations, and applies them in macro-scale device models. This work focuses on the MAPbI3 (MA = CH3NH3) perovskite and how its phase transitions impact on its optical, electronic, and structural properties which are investigated at the first-principles level. The obtained data are coupled to a numerical drift-diffusion device model enabling evaluation of the performance of corresponding single junction devices. The first-principles simulation applies a hybrid exchange-correlation functional adapted to the studied family of compounds. Validation by available experimental data is presented from materials properties to device performance, justifying the use of the approach for predictive evaluation of existing and novel perovskites. The coupling between atomistic and device models is described in terms of a framework for exchange of optical and electronic parameters between the two scales. The obtained results are systematically discussed in terms of first-principles levels of approximation performances.

cond-mat.mtrl-sci↗

Quantum Wells in Photovoltaic Cells

The fundamental efficiency limit of a single bandgap solar cell is about 31% at one sun with a bandgap of about Eg = 1.35 eV (1), determined by the trade-off of maximising current with a smaller bandgap and voltage with a larger bandgap. Multiple bandgaps can be introduced to absorb the broad solar spectrum more efficiently. This can be realised in multi- junction cells, for example, where two or more cells are stacked on top of each other either mechanically or monolithically connected by a tunnel junction. An alternative or complementary (see section 1.4) approach is the quantum well cell (QWC).

cond-mat.mes-hall↗