arXiv subjects

János Koltai

Publications and source records attributed to János Koltai.

31 records · Page 2Linked to original sources

arXiv2019

Topological Phase Diagram of BiTeX--Graphene Hybrid Structures

Combining graphene with other novel layered materials is a possible way for engineering the band structure of charge carriers. Strong spin-orbit coupling in BiTeX compounds and the recent fabrication of a single layer of BiTeI points towards a feasible experimental realization of a Kane--Mele phase in graphene-based heterostructures. Here, we theoretically demonstrate the tunability of the topological phase of hybrid systems built from graphene and BiTeX (X = I, Br, Cl) layers by uniaxial in-plane tensile and out-of plane compressive strain. We show that structural stress inherently present in fabricated samples could induce a topological phase transition, thus turning the sample in a novel experimental realization of a time reversal invariant topological insulator.

cond-mat.mtrl-sci↗

arXiv2019

Uniaxial Strain Induced Topological Phase Transition in Bismuth-Tellurohalide-Graphene Heterostructures

We explore the electronic structure and topological phase diagram of heterostructures formed of graphene and ternary bismuth tellurohalide layers. We show that mechanical strain inherently present in fabricated samples could induce a topological phase transition in single-sided heterostructures, turning the sample into a novel experimental realisation of a time reversal invariant topological insulator. We construct an effective tight binding description for low energy excitations and fit the model's parameters to ab initio band structures. We propose a simple approach for predicting phase boundaries as a function of mechanical distortions and hence gain a deeper understanding on how the topological phase in the considered system may be engineered.

cond-mat.mes-hall↗

arXiv2019

Frequency-dependent ab initio Resonance Raman Spectroscopy

We present a new method to compute resonance Raman spectra based on ab initio level calculations using the frequency-dependent Placzek approximation. We illustrate the efficiency of our hybrid quantum-classical method by calculating the Raman spectra of several materials with different crystal structures. Results obtained from our approach agree very well with experimental data in the literature. We argue that our method offers an affordable and far more accurate alternative to the widely used static Placzek approximation.

cond-mat.other↗

arXiv2019

Magic number theory of superconducting proximity effects and Wigner delay times in graphene-like molecules

When a single molecule is connected to external electrodes by linker groups, the connectivity of the linkers to the molecular core can be controlled to atomic precision by appropriate chemical synthesis. Recently, the connectivity dependence of the electrical conductance and Seebeck coefficient of single molecules has been investigated both theoretically and experimentally. Here we study the connectivity dependence of the Wigner delay time of single-molecule junctions and the connectivity dependence of superconducting proximity effects, which occur when the external electrodes are replaced by superconductors. Although absolute values of transport properties depend on complex and often uncontrolled details of the coupling between the molecule and electrodes, we demonstrate that ratios of transport properties can be predicted using tables of 'magic numbers,' which capture the connectivity dependence of superconducting proximity effects and Wigner delay times within molecules. These numbers are calculated easily, without the need for large-scale computations. For normal-molecule-superconducting junctions, we find that the electrical conductance is proportional to the fourth power of their magic numbers, whereas for superconducting-molecule-superconducting junctions, the critical current is proportional to the square of their magic numbers. For more conventional normal-molecule-normal junctions, we demonstrate that delay time ratios can be obtained from products of magic number tables.

cond-mat.mes-hall↗

arXiv2019

Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene

The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.

cond-mat.mes-hall↗

arXiv2019

Resonance Raman spectroscopy of silicene and germanene

We model Raman processes in silicene and germanene involving scattering of quasiparticles by, either, two phonons, or, one phonon and one point defect. We compute the resonance Raman intensities and lifetimes for laser excitations between 1 and 3$\,$eV using a newly developed third-nearest neighbour tight-binding model parametrized from first principles density functional theory. We identify features in the Raman spectra that are unique to the studied materials or the defects therein. We find that in silicene, a new Raman resonance arises from the $2.77\,\rm$eV $π-σ$ plasmon at the M point, measurably higher than the Raman resonance originating from the $2.12\,\rm$eV $π$ plasmon energy. We show that in germanene, the lifetimes of charge carriers, and thereby the linewidths of the Raman peaks, are influenced by spin-orbit splittings within the electronic structure. We use our model to predict scattering cross sections for defect induced Raman scattering involving adatoms, substitutional impurities, Stone-Wales pairs, and vacancies, and argue that the presence of each of these defects in silicene and germanene can be qualitatively matched to specific features in the Raman response.

cond-mat.mtrl-sci↗

arXiv2017

Exfoliation of single layer BiTeI flakes

Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candidate for such a 2D crystal, since it contains heavy Bi layer between Te and I layers. Recently the bulk form of BiTeI attracted considerable attention due to its giant Rashba interaction, however, 2D form of this crystal was not yet created. In this work we report the first exfoliation of single layer BiTeI using a recently developed exfoliation technique on stripped gold. Our combined scanning probe studies and first principles calculations show that SL BiTeI flakes with sizes of 100 $μ$m were achieved which are stable at ambient conditions. The giant Rashba splitting and spin-momentum locking of this new member of 2D crystals open the way towards novel spintronic applications and synthetic topological heterostructures.

cond-mat.mes-hall↗

arXiv2017

Preparing local strain patterns in graphene by atomic force microscope based indentation

Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.

cond-mat.mes-hall↗

arXiv2016

Controlled isotope arrangement in 13C enriched carbon nanotubes

We report the synthesis of a novel isotope engineered $^{13}{\rm C}$--$^{12}{\rm C}$ heteronuclear nanostructure: single-wall carbon nanotubes made of $^{13}{\rm C}$ enriched clusters which are embedded in natural carbon regions. The material is synthesized with a high temperature annealing from $^{13}{\rm C}$ enriched benzene and natural ${\rm C}_{60}$, which are co-encapsulated inside host SWCNTs in an alternating fashion. The Raman 2D line indicates that the $^{13}{\rm C}$ isotopes are not distributed uniformly in the inner tubes. A semi-empirical method based modeling of the Raman modes under $^{13}{\rm C}$ isotope enrichment shows that experimental data is compatible with the presence of $^{13}{\rm C}$ rich clusters which are embedded in a natural carbon containing matrix. This material may find applications in quantum information processing and storage using nuclear spins as qubits.

cond-mat.mtrl-sci↗

arXiv2014

I-band-like non-dispersive inter-shell interaction induced Raman lines in the D band region of double-walled carbon nanotubes

Non-dispersive, inter-layer interaction induced Raman peaks (I bands) -- in the region of the D band -- have been observed recently for bilayer graphene, when the two layers were rotated with respect to each other. Here, similar observations for double-walled carbon nanotubes (DWCNTs) are theoretically predicted. The prediction is based on double resonance theory, involving non-zone-centered phonons, and the effect of disorder is replaced by interaction between the two tubes.

cond-mat.mes-hall↗

arXiv2013

Observation of conduction electron spin resonance in boron doped diamond

We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature independent ESR signal intensity and its magnitude which is in good agreement with that expected from the density of states through the Pauli spin-susceptibility. The temperature dependent CESR linewidth weakly increases with increasing temperature which can be understood in the framework of the Elliott-Yafet theory of spin-relaxation. An anomalous and yet unexplained relation is observed between the g-factor, CESR linewidth, and the resistivity using the empirical Elliott-Yafet relation.

cond-mat.mtrl-sci↗

arXiv2011

Density of states deduced from ESR measurements on low-dimensional nanostructures; benchmarks to identify the ESR signals of graphene and SWCNTs

Electron spin resonance (ESR) spectroscopy is an important tool to characterize the ground state of conduction electrons and to measure their spin-relaxation times. Observing ESR of the itinerant electrons is thus of great importance in graphene and in single-wall carbon nanotubes (SWCNTs). Often, the identification of CESR signal is based on two facts: the apparent asymmetry of the ESR signal (known as a Dysonian lineshape) and on the temperature independence of the ESR signal intensity. We argue that these are insufficient as benchmarks and instead the ESR signal intensity (when calibrated against an intensity reference) yields an accurate characterization. We detail the method to obtain the density of states from an ESR signal, which can be compared with theoretical estimates. We demonstrate the success of the method for K doped graphite powder. We give a benchmark for the observation of ESR in graphene.

cond-mat.mtrl-sci↗

arXiv2010

Catastrophe optics of caustics in single and bilayer graphene: fine structure of caustics

We theoretically study the scattering of a plane wave of a ballistic electron on a circular n-p junction in single and bilayer graphene. We compare the exact wave function inside the junction to that obtained from a semiclassical formula developed in catastrophe optics. In the semiclassical picture short-wavelength electrons are treated as rays of particles that can get reflected and refracted at the n-p junction according to Snell's law with negative refraction index. We show that for short wavelength and close to caustics this semiclassical approximation gives good agreement with the exact results in the case of single-layer graphene. We also verify the universal scaling laws that govern the shrinking rate and intensity divergence of caustics in the semiclassical limit. It is straightforward to generalize our semiclassical method to more complex geometries, offering a way to efficiently design and model graphene-based electron-optical systems.

cond-mat.mes-hall↗