arXiv subjects

Jörg Schuster

Publications and source records attributed to Jörg Schuster.

12 recordsLinked to original sources

arXiv2026

Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si

Local composition fluctuations in random alloys become crucial when one or more dimensions are reduced to the nanoscale. Using extended Hückel theory, we study the semiconductor random alloy SiGe sandwiched between Si due to its relevance for transistor devices. We evaluate the effects of the alloy composition, layer thickness, and local fluctuations of the Ge concentration on the band alignment and the band gap. The results are compared with the finite quantum well model. That model captures the essential physics and can act as a computationally faster alternative.

cond-mat.mes-hall↗

arXiv2025

First-principles analysis of the effect of magnetic states on the oxygen vacancy formation energy in doped La$_{0.5}$Sr$_{0.5}$CoO$_3$ perovskite

Oxygen vacancies are critical for determining the electrochemical performance of fast oxygen ion conductors. The perovskite La$_{0.5}$Sr$_{0.5}$CoO$_3$, known for its excellent mixed ionic-electronic conduction, has attracted significant attention due to its favorable vacancy characteristics. In this study, we employ first-principles calculations to systematically investigate the impact of 3$d$ transition-metal doping on the oxygen vacancy formation energies in the perovskite. Two magnetic states, namely the ferromagnetic and paramagnetic states, are considered in our models to capture the influence of magnetic effects on oxygen vacancy energetics. Our results reveal that the oxygen vacancy formation energies are strongly dependent on both the dopant species and the magnetic state. Notably, the magnetic states alter the vacancy formation energy in a dopant-specific manner due to double exchange interactions, indicating that relying solely on the ferromagnetic ground state may result in misleading trends in doping behavior. These findings emphasise the importance of accounting for magnetic effects when investigating oxygen vacancy properties in perovskite oxides.

cond-mat.mtrl-sci↗

arXiv2023

Quantum transport in graphene nanoribbon networks: complexity reduction by a network decimation algorithm

We study electronic quantum transport in graphene nanoribbon (GNR) networks on mesoscopic length scales. We focus on zigzag GNRs and investigate the conductance properties of statistical networks. To this end we use a density-functional-based tight-binding model to determine the electronic structure and quantum transport theory to calculate electronic transport properties. We then introduce a new efficient network decimation algorithm that reduces the complexity in generic three-diemnsional GNR networks. We compare our results to semi-classical calculations based on the nodal analysis approach and discuss the dependence of the conductance on network density and network size. We show that a nodal analysis model cannot reproduce the quantum transport results nor their dependence on model parameters well. Thus, solving the quantum network by our efficient approach is mandatory for accurate modelling the electron transport through GNR networks.

cond-mat.mes-hall↗

arXiv2022

An improved Green's function algorithm applied to quantum transport in carbon nanotubes

The renormalization-decimation algorithm (RDA) of López Sancho et al. is used in quantum transport theory to calculate bulk and surface Green's functions. We derive an improved version of the RDA for the case of very long quasi one-dimensional unit cells (in transport direction). This covers not only long unit cells but also supercell-like calculations for structures with disorder or defects. In such large systems, short-range interactions lead to sparse real-space Hamiltonian matrices. We show how this and a corresponding subdivision of the unit cell in combination with the decimation technique can be used to reduce the calculation time. Within the resulting algorithm, separate RDA calculations of much smaller effective Hamiltonian matrices must be done for each Green's function, which enables the treatment of systems too large for the common RDA. Finally, we discuss the performance properties of our improved algorithm as well as some exemplary results for chiral carbon nanotubes.

physics.comp-ph↗

arXiv2019

Strain and screening: Optical properties of a small-diameter carbon nanotube from first principles

Carbon nanotubes (CNTs) are a one-dimensional material system with intriguing physical properties that lead to emerging applications. While CNTs are unusually strain resistant compared to bulk materials, their optical-absorption spectrum is highly strain dependent. It is an open question, as to what extent this is attributed to strain-dependent (i) electronic single-particle transitions, (ii) dielectric screening, or (iii) atomic geometries including CNT radii. We use cutting-edge theoretical spectroscopy to explain strain-dependent electronic structure and optical properties of an (8,0) CNT. Quasiparticle effects are taken into account using Hedin's GW approximation and excitonic effects are described by solving a Bethe-Salpeter-equation for the optical polarization function. This accurate first-principles approach allows us to identify an inuence of strain on screening of the Coulomb electron-electron interaction and to quantify the impact on electronic structure and optical absorption of one-dimensional systems. We interpret our thoroughly converged results using an existing scaling relation and extend the use of this relation to strained CNTs: We show that it captures optical absorption with satisfactory accuracy, as long as screening, quasiparticle gap, and effective electron and hole masses of the strained CNT are known.

physics.comp-ph↗

arXiv2018

Electronic transport in metallic carbon nanotubes with mixed defects within the strong localization regime

We study the electron transport in metallic carbon nanotubes (CNTs) with realistic defects of different types. We focus on large CNTs with many defects in the mesoscopic range. In a recent paper we demonstrated that the electronic transport in those defective CNTs is in the regime of strong localization. We verify by quantum transport simulations that the localization length of CNTs with defects of mixed types can be related to the localization lengths of CNTs with identical defects by taking the weighted harmonic average. Secondly, we show how to use this result to estimate the conductance of arbitrary defective CNTs, avoiding time consuming transport calculations.

cond-mat.mes-hall↗

arXiv2018

Improved recursive Green's function formalism for quasi one-dimensional systems with realistic defects

We derive an improved version of the recursive Green's function formalism (RGF), which is a standard tool in the quantum transport theory. We consider the case of disordered quasi one-dimensional materials where the disorder is applied in form of randomly distributed realistic defects, leading to partly periodic Hamiltonian matrices. The algorithm accelerates the common RGF in the recursive decimation scheme, using the iteration steps of the renormalization decimation algorithm. This leads to a smaller effective system, which is treated using the common forward iteration scheme. The computational complexity scales linearly with the number of defects, instead of linearly with the total system length for the conventional approach. We show that the scaling of the calculation time of the Green's function depends on the defect density of a random test system. Furthermore, we discuss the calculation time and the memory requirement of the whole transport formalism applied to defective carbon nanotubes.

physics.comp-ph↗

arXiv2018

Strong localization in defective carbon nanotubes: a recursive Green's function study

We study the transport properties of defective single-walled armchair carbon nanotubes (CNTs) on a mesoscopic length scale. Monovacancies and divancancies are positioned randomly along the CNT. The calculations are based on a fast, linearly scaling recursive Green's function formalism that allows us to treat large systems quantum-mechanically. The electronic structure of the CNT is described by a density-functional-based tight-binding model. We determine the influence of the defects on the transmission function for a given defect density by statistical analysis. We show that the system is in the regime of strong localization (i.e. Anderson localization). In the limit of large disorder the conductance scales exponentially with the number of defects. This allows us to extract the localization length. Furthermore, we study in a systematic and comprehensive way, how the conductance, the conductance distribution, and the localization length depend on defect probability, CNT diameter, and temperature.

cond-mat.mes-hall↗

arXiv2018

Electronic transport through defective semiconducting carbon nanotubes

We investigate the electronic transport properties of semiconducting ($m$,$n$) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport calculations based on recursive Green's function techniques and an underlying density-functional-based tight-binding model for the description of the electronic structure. Zigzag CNTs as well as chiral CNTs of different diameter are considered. Different defects are exemplarily represented by monovacancies and divacancies. We show the energy-dependent transmission and the temperature-dependent conductance as a function of the number of defects. In the limit of many defetcs, the transport is described by strong localization. Corresponding localization lengths are calculated (energy dependent and temperature dependent) and systematically compared for a large number of CNTs. It is shown, that a distinction by $(m-n)\,\mathrm{mod}\,3$ has to be drawn in order to classify CNTs with different bandgaps. Besides this, the localization length for a given defect probability per unit cell depends linearly on the CNT diameter, but not on the CNT chirality. Finally, elastic mean free paths in the diffusive regime are computed for the limit of few defects, yielding qualitatively same statements.

cond-mat.mes-hall↗

arXiv2018

Influence of defect-induced deformations on electron transport in carbon nanotubes

We theoretically investigate the influence of defect-induced long-range deformations in carbon nanotubes on their electronic transport properties. To this end we perform numerical ab-initio calculations using a density-functional-based tight-binding (DFTB) model for various tubes with vacancies. The geometry optimization leads to a change of the atomic positions. There is a strong reconstruction of the atoms near the defect (called "distortion") and there is an additional long-range deformation. The impact of both structural features on the conductance is systematically investigated. We compare short and long CNTs of different kinds with and without long-range deformation. We find for the very thin (9,0)-CNT that the long-range deformation additionally affects the transmission spectrum and the conductance compared to the short-range lattice distortion. The conductance of the larger (11,0)- or the (14,0)-CNT is overall less affected implying that the influence of the long-range deformation decreases with increasing tube diameter. Furthermore, the effect can be either positive or negative depending on the CNT type and the defect type. Our results indicate that the long-range deformation must be included in order to reliably describe the electronic structure of defective, small-diameter zigzag tubes.

cond-mat.mes-hall↗

arXiv2017

Elastic and Piezoresistive Properties of Nickel Carbides from First-Principles

The nickel--carbon system has received increased attention over the past years due to the relevance of nickel as a catalyst for carbon nanotube and graphene growth, where Nickel carbide intermediates may be involved or carbide interface layers form in the end. Nickel--carbon composite thin films comprising Ni$_3$C are especially interesting in mechanical sensing applications. Due to the meta-stability of nickel carbides, formation conditions and the coupling between mechanical and electrical properties are not yet well understood. Using first-principles electronic structure methods, we calculated the elastic properties of Ni$_3$C, Ni$_2$C and NiC, as well as changes in electronic properties under mechanical strain. We observe that the electronic density of states around the Fermi level does not change under the considered strains of up to 1%, which correspond to stresses up to 3GPa. Relative changes in conductivity of Ni$_3$C range up to maximum values of about 10%.

cond-mat.mtrl-sci↗

arXiv2011

Decomposition of formic acid

Formic acid is known to act as a reduction agent for copper oxide. Its thermal uni-molecular decomposition was studied by means of DFT with special attention to reaction paths and kinetics.

physics.chem-ph↗