arXiv subjects

Jürg Osterwalder

Publications and source records attributed to Jürg Osterwalder.

16 recordsLinked to original sources

arXiv2023

Revealing the bonding nature and electronic structure of early transition metal dihydrides

Hydrogen as a fuel plays a crucial role in driving the transition to net zero greenhouse gas emissions. To realise its potential, obtaining a means of efficient storage is paramount. One solution is using metal hydrides, owing to their good thermodynamical absorption properties and effective hydrogen storage. Although metal hydrides appear simple compared to many other energy materials, understanding the electronic structure and chemical environment of hydrogen within them remains a key challenge. This work presents a new analytical pathway to explore these aspects in technologically relevant systems using Hard X-ray Photoelectron Spectroscopy (HAXPES) on thin films of two prototypical metal dihydrides: YH$_{2-δ}$ and TiH$_{2-δ}$. By taking advantage of the tunability of synchrotron radiation, a non-destructive depth profile of the chemical states is obtained using core level spectra. Combining experimental valence band spectra collected at varying photon energies with theoretical insights from density functional theory (DFT) calculations, a description of the bonding nature and the role of d versus sp contributions to states near the Fermi energy are provided. Moreover, a reliable determination of the enthalpy of formation is proposed by using experimental values of the energy position of metal s band features close to the Fermi energy in the HAXPES valence band spectra.

cond-mat.mtrl-sci↗

arXiv2021

Importance of surface oxygen vacancies for ultrafast hot carrier relaxation and transport in Cu$_2$O

Cu$_2$O has appealing properties as an electrode for photo-electrochemical water splitting, yet its practical performance is severely limited by inefficient charge extraction at the interface. Using hybrid DFT calculations, we investigate carrier capture processes by oxygen vacancies (V$_\mathrm{O}$) in the experimentally observed ($\sqrt{3} \times \sqrt{3}$)R30$^{\circ}$ reconstruction of the dominant (111) surface. Our results show that these V$_\mathrm{O}$ are doubly ionized and that associated defects states strongly suppress electron transport. In particular, the excited electronic state of a singly charged V$_\mathrm{O}$ plays a crucial role in the non-radiative electron capture process with a capture coefficient of about 10$^{-9}$~cm$^3$/s and a lifetime of 0.04~ps, explaining the experimentally observed ultrafast carrier relaxation. These results highlight that engineering the surface V$_\mathrm{O}$ chemistry will be a crucial step in optimizing Cu$_2$O for photoelectrode applications.

cond-mat.mtrl-sci↗

arXiv2020

High-quality hexagonal boron nitride from 2D distillation

The production of high-quality two-dimensional (2D) materials is essential for the ultimate performance of single layers and their hybrids. Hexagonal boron nitride (h-BN) is foreseen to become the key 2D hybrid and packaging material since it is insulating, tight, flat, transparent and chemically inert, though it is difficult to attain in ultimate quality. Here, a new scheme is reported for producing single layer h-BN that shows higher quality and much more uniformity than material from chemical vapor deposition (CVD). We delaminate CVD h-BN from Rh(111) and transfer it to a clean metal surface. The twisting angle between BN and the new substrate yields metastable moiré structures. Annealing above 1000 K leads to 2D distillation, i.e., catalyst-assisted BN sublimation from the edges of the transferred layer and subsequent condensation into superior quality h-BN. This provides a new and low-cost way of high-quality 2D material production remote from CVD instrumentation.

cond-mat.mtrl-sci↗

arXiv2018

Algorithms and image formation in orbital tomography

Orbital tomography has recently been established as a technique to reconstruct molecular orbitals directly from photoemission data using iterative phase retrieval algorithms. In this work, we present a detailed description of steps for processing of the photoemission data followed by an improved iterative phase retrieval procedure and the interpretation of reconstructed two-dimensional orbital distributions. We address the issue of background subtraction by suggesting a signal restoration routine based on the maximization of mutual information algorithm and solve the problem of finding the geometrical center in the reconstruction by using a tight-centered object support in a two-step phase retrieval procedure. The proposed image processing and improved phase retrieval procedures are used to reconstruct the highest occupied molecular orbital of pentacene on Ag(110), using photoemission data only. The results of the reconstruction agree well with the density functional theory simulation, modified to comply with the experimental conditions. By comparison with photoelectron holography, we show that the reconstructed two-dimensional orbital distribution can be interpreted as a superposition of the in-focus orbital distribution evaluated at the z = 0 plane and out-of-focus distributions evaluated at other z = const planes. Three-dimensional molecular orbital distributions could thus be reconstructed directly from two-dimensional photoemission data, provided the axial resolution of the imaging system is high enough.

physics.chem-ph↗

arXiv2018

An electron acceptor molecule in a nanomesh: F4TCNQ on h-BN/Rh(111)

The adsorption of molecules on surfaces affects the surface dipole and thus changes in the work function may be expected. The effect in change of work function is particularly strong if charge between substrate and adsorbate is involved. Here we report the deposition of a strong electron acceptor molecule, tetrafluorotetracyanoquinodimethane C$_{12}$F$_4$N$_4$ (F$_{4}$TCNQ) on a monolayer of hexagonal boron nitride nanomesh ($h$-BN on Rh(111)). The work function of the F$_{4}$TCNQ/$h$-BN/Rh system increases upon increasing molecular coverage. The magnitude of the effect indicates electron transfer from the substrate to the F$_{4}$TCNQ molecules. Density functional theory calculations confirm the work function shift and predict doubly charged F$_{4}$TCNQ$^{2-}$ in the nanomesh pores, where the $h$-BN is closest to the Rh substrate, and to have the largest binding energy there. The preferred adsorption in the pores is conjectured from a series of ultraviolet photoelectron spectroscopy data, where the $σ$ bands in the pores are first attenuated. Scanning tunneling microscopy measurements indicate that F$_{4}$TCNQ molecules on the nanomesh are mobile at room temperature, as "hopping" between neighboring pores is observed.

cond-mat.mtrl-sci↗

arXiv2016

Laser-induced asymmetric faceting and growth of nano-protrusion on a tungsten tip

Irradiation of a sharp tungsten tip by a femtosecond laser and exposed to a strong DC electric field led to gradual and reproducible surface modifications. By a combination of field emission microscopy and scanning electron microscopy, we observed asymmetric surface faceting with sub-ten nanometer high steps. The presence of well pronounced faceted features mainly on the laser-exposed side implies that the surface modification was driven by a laser-induced transient temperature rise -- on a scale of a couple of picoseconds -- in the tungsten tip apex. Moreover, we identified the formation of a nano-tip a few nanometers high located at one of the corners of a faceted plateau. The results of simulations emulating the experimental conditions, are consistent with the experimental observations. The presented conditions can be used as a new method to fabricate nano-tips of few nm height, which can be used in coherent electron pulses generation. Besides the direct practical application, the results also provide insight into the microscopic mechanisms of light-matter interaction. The apparent growth mechanism of the features may also help to explain the origin of enhanced electron field emission, which leads to vacuum arcs, in high electric-field devices such as radio-frequency particle accelerators.

cond-mat.mtrl-sci↗

arXiv2015

Sputtering induced re-emergence of the topological surface state in Bi$_2$Se$_3$

We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be modeled by a unitary impurity distribution, whereas adsorbates, such as water vapor or carbon monoxide, are best described by Gaussian disorder. Remarkably, these two disorder types have a dramatically different effect on the surface states. Our soft x-ray ARPES measurements combined with numerical simulations show that unitary surface disorder pushes the Dirac state to inward quintuplet layers, burying it below an insulating surface layer. As a consequence, the surface spectral function becomes weaker, but retains its quasiparticle peak. This is in contrast to Gaussian disorder, which smears out the quasiparticle peak completely. At the surface of Bi$_2$Se$_3$, the effects of Gaussian disorder can be reduced by removing surface adsorbates using neon sputtering, which, however, introduces unitary scatterers. Since unitary disorder has a weaker effect than Gaussian disorder, the ARPES signal of the Dirac surface state becomes sharper upon sputtering.

cond-mat.mes-hall↗

arXiv2015

Response of the topological surface state to surface disorder in TlBiSe$_2$

Through a combination of experimental techniques we show that the topmost layer of the topo- logical insulator TlBiSe$_2$ as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands can not be re- garded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as a direct evidence of its topological self-protection and shows the robust nature of the Dirac cone like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe$_2$.

cond-mat.mes-hall↗

arXiv2013

Separating the bulk and surface n- to p-type transition in the topological insulator GeBi(4-x)SbxTe7

We identify the multi-layered compound GeBi4Te7 to be a topological insulator with a freestanding Dirac point, slightly above the valence band maximum, using angle-resolved photoemission spectroscopy (ARPES) measurements. The spin polarization satisffies the time reversal symmetry of the surface states, visible in spin-resolved ARPES. For increasing Sb content in GeBi(4-x)SbxTe7 we observe a transition from n- to p-type in bulk sensitive Seebeck coefficient measurements at a doping of x = 0.6. In surface sensitive ARPES measurements a rigid band shift is observed with Sb doping, accompanied by a movement of the Dirac point towards the Fermi level. Between x = 0.8 and x = 1 the Fermi level crosses the band gap, changing the surface transport regime. This difference of the n- to p-type transition between the surface region and the bulk is caused by band bending effects which are also responsible for a non-coexistence of insulating phases in the bulk and in the near surface region.

cond-mat.mtrl-sci↗

arXiv2013

Interband spin-orbit coupling between anti-parallel spin states in Pb quantum well states

Using spin and angle-resolved photoemission spectroscopy we investigate a momentum region in Pb quantum well states on Si(111) where hybridization between Rashba-split bands alters the band structure significantly. Starting from the Rashba regime where the dispersion of the quasi-free two-dimensional electron gas is well described by two spin-polarized parabolas, we find a breakdown of the Rashba behavior which manifests itself (i) in a spin splitting that is no longer proportional to the in-plane momentum and (ii) in a reversal of the sign of the momentum splitting. Our experimental findings are well explained by including interband spin-orbit coupling that mixes Rashba-split states with anti-parallel rather than parallel spins. Similar results for Pb/Cu(111) reveal that the proposed hybridization scenario is independent on the supporting substrate.

cond-mat.mtrl-sci↗

arXiv2013

Tuning of the Rashba effect in Pb quantum well states via a variable Schottky barrier

Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating a Fermi surface spin texture reminiscent of spin vortices of different radii. This can be exploited in a spin-based field-effect transistor (spin- FET), where the Rashba system forms a 2D channel between ferromagnetic (FM) source and drain electrodes. The electron spin precesses when propagating through the Rashba channel and spin orientations (anti)parallel to the drain give (low) high conductivity. Crucial is the possibility to tune the momentum splitting, and consequently the precession angle, through an external parameter. Here we show that this can be achieved in Pb quantum well states through the doping dependence of the Schottky barrier, opening up the possibility of a terahertz spin-FET.

cond-mat.mtrl-sci↗

arXiv2012

Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator

Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator transition on the surfaces of manganese-doped Bi2Se3 thin films. The resulting electronic groundstate exhibits unique hedgehog-like spin textures at low energies, which directly demonstrate the mechanics of TR symmetry breaking on the surface. We further show that an insulating gap induced by quantum tunnelling between surfaces exhibits spin texture modulation at low energies but respects TR invariance. These spin phenomena and the control of their Fermi surface geometrical phase first demonstrated in our experiments pave the way for the future realization of many predicted exotic magnetic phenomena of topological origin.

cond-mat.mes-hall↗

arXiv2011

Mechanism of Laser-induced Field Emission

We have measured electron energy distribution curves (EDCs) of the laser-induced field emission from a tungsten tip. Field emission from photo-excited nonequilibrium electron distributions were clearly observed, while no enhanced field emission due to optical electric fields appeared up to values of 1.3 V/nm. Thus, we experimentally confirm the emission mechanism. Simulated transient EDCs show that electron dynamics plays a significant role in the laser-induced field emission. The results should be useful to find optimal parameters for defining the temporal and spectral characteristics of electron pulses for many applications based on pulsed field emission.

cond-mat.mes-hall↗

arXiv2010

Laser-induced Field Emission from Tungsten Tip: Optical Control of Emission Sites and Emission Process

Field-emission patterns from a clean tungsten tip apex induced by femtosecond laser pulses have been investigated. Strongly asymmetric field-emission intensity distributions are observed depending on three parameters: (1) the polarization of the light, (2) the azimuthal and (3) the polar orientation of the tip apex relative to the laser incidence direction. In effect, we have realized an ultrafast pulsed field-emission source with site selectivity of a few tens of nanometers. Simulations of local fields on the tip apex and of electron emission patterns based on photo-excited nonequilibrium electron distributions explain our observations quantitatively. Electron emission processes are found to depend on laser power and tip voltage. At relatively low laser power and high tip voltage, field-emission after two-photon photo-excitation is the dominant process. At relatively low laser power and low tip voltage, photoemission processes are dominant. As the laser power increases, photoemission from the tip shank becomes noticeable.

cond-mat.mes-hall↗

arXiv2009

Optical Control of Field-Emission Sites by Femtosecond Laser Pulses

We have investigated field emission patterns from a clean tungsten tip apex induced by femtosecond laser pulses. Strongly asymmetric modulations of the field emission intensity distributions are observed depending on the polarization of the light and the laser incidence direction relative to the azimuthal orientation of tip apex. In effect, we have realized an ultrafast pulsed field-emission source with site selectivity on the 10 nm scale. Simulations of local fields on the tip apex and of electron emission patterns based on photo-excited nonequilibrium electron distributions explain our observations quantitatively.

cond-mat.mes-hall↗

arXiv2008

Is graphene on Ru(0001) a nanomesh?

The electronic structure of a single layer graphene on Ru(0001) is compared with that of a single layer hexagonal boron nitride nanomesh on Ru(0001). Both are corrugated sp2 networks and display a pi-band gap at the K point of their 1 x 1 Brillouin zone. Graphene has a distinct Fermi surface which indicates that 0.1 electrons are transferred per 1 x 1 unit cell. Photoemission from adsorbed xenon identifies two distinct Xe 5p1/2 lines, separated by 240 meV, which reveals a corrugated electrostatic potential energy surface. These two Xe species are related to the topography of the system and have different desorption energies.

cond-mat.mtrl-sci↗