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Jürgen Fleig

Publications and source records attributed to Jürgen Fleig.

2 recordsLinked to original sources

Bias-triggered conductivity relaxation (BCR): a unique tool to simultaneously investigate thermodynamics, kinetics and electrostatic effects of oxygen reactions in MIEC thin films

Mixed ionic electronic transfer (MIET) reactions, such as the oxygen reduction reaction (ORR) at oxide surfaces, are of paramount importance to manifold technologically highly relevant processes and fundamental understanding must be developed to improve performance and tailor highly efficient electrodes and catalysts. Understanding such complex multi-step reactions, requires the study of kinetic processes, underlying thermodynamic properties, i.e. ionic and electronic defect concentrations and electrostatic surface effects. However conventional techniques struggle to uncover the complete picture within the same sample/measurement. Here, we overcome this limitation by introducing bias-triggered conductivity relaxation (BCR) as a novel tool to investigate MIET reactions on oxides. It is based on alternating out-of-plane coulometric titration/polarization and in-plane electrical conductivity relaxation measurements, providing simultaneous electronic, ionic and extraordinarily rich surface kinetics information. This innovative combination of electrical and chemical driving forces synergizes information depth, with enhanced time resolution, versatility and speed, yet it lifts the weaknesses of the individual approaches, while remaining cost-effective and surprisingly simple. Furthermore, BCR allows to disentangle overpotential induced electrostatic modifications of the surface kinetics in a unique manner. We showcase the advantages of BCR in this work by studying the ORR in model (La,Sr)FeO$_{3-δ}$ thin film electrodes and reporting on their thermodynamic and kinetic properties.

cond-mat.mtrl-sci↗

Bulk and surface characterization of In$_2$O$_3$(001) single crystals

A comprehensive bulk and surface investigation of high-quality In$_2$O$_3$(001) single crystals is reported. The transparent-yellow, cube-shaped single crystals were grown using the flux method. Inductively coupled plasma mass spectrometry (ICP-MS) reveals small residues of Pb, Mg, and Pt in the crystals. Four-point-probe measurements show a resistivity of 2.0 $\pm$ 0.5 $\times$ 10$^5$ Ω cm, which translates into a carrier concentration of $\approx$10$^{12}$ cm$^{-3}$. The results from x-ray diffraction (XRD) measurements revise the lattice constant to 10.1150(5) Å from the previously accepted value of 10.117 Å. Scanning tunneling microscopy (STM) images of a reduced (sputtered/annealed) and oxidized (exposure to atomic oxygen at 300 °C) surface show a step height of 5 Å, which indicates a preference for one type of surface termination. The surfaces stay flat without any evidence for macroscopic faceting under any of these preparation conditions. A combination of low-energy ion scattering (LEIS) and atomically resolved STM indicates an indium-terminated surface with small islands of 2.5 Å height under reducing conditions, with a surface structure corresponding to a strongly distorted indium lattice. Scanning tunneling spectroscopy (STS) reveals a pronounced surface state at the Fermi level ($E_F$). Photoelectron spectroscopy (PES) shows additional, deep-lying band gap states, which can be removed by exposure of the surface to atomic oxygen. Oxidation also results in a shoulder at the O 1s core level at a higher binding energy, possibly indicative of a surface peroxide species. A downward band bending of 0.4 eV is observed for the reduced surface, while the band bending of the oxidized surface is of the order of 0.1 eV or less.

cond-mat.mtrl-sci↗