arXiv subjects

J. A. Gupta

Publications and source records attributed to J. A. Gupta.

17 recordsLinked to original sources

arXiv2020

Spin polarized STM imaging of nanoscale Néel skyrmions in an SrIrO3/SrRuO3 Perovskite Bilayer

Spin-polarized scanning tunneling microscopy (SPSTM) was used to directly image nanoscale Néel skyrmions in a SrIrO3 / SrRuO3 bilayer system that are among the smallest reported to date in any system. Off-axis magnetron sputtering was used to cap epitaxial films of the oxide ferromagnet SRO with 2 unit cells of SrIrO3, intended to provide interfacial spin orbit coupling. Atomic resolution STM imaging and tunneling spectroscopy were used to identify island-like SrIrO3 grains and small regions of bare SrRuO3. Isolated skyrmions were only observed in SrIrO3-covered regions of the film, and exhibited a distribution of sizes and shapes with an average diameter of 3 nm. We found that skyrmions must be fully contained within, but may be smaller than, any given SrIrO3 region. Additionally, skyrmions were observed on SrIrO3 islands of varying thickness without loss of SPSTM contrast, suggesting the magnetic texture lies within the SrIrO3 island rather than the underlying ferromagnetic SrRuO3. Density functional theory calculations suggest this could be due to a small induced magnetic moment associated with IrO layers in the SrIrO3 film.

cond-mat.mtrl-sci↗

arXiv2018

Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy

We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.

cond-mat.mes-hall↗

arXiv2017

Crystalline hydrogenation of graphene by STM tip-induced field dissociation of H$_2$

We have developed a novel method for crystalline hydrogenation of graphene on the nanoscale. Molecular hydrogen was physisorbed at 5 K onto pristine graphene islands grown on Cu(111) in ultrahigh vacuum. Field emission local to the tip of a scanning tunneling microscope dissociates H$_2$ and results in hydrogenated graphene. At lower coverage, isolated point defects are found on the graphene and are attributed to chemisorbed H on top and bottom surfaces. Repeated H$_2$ exposure and field emission yielded patches and then complete coverage of a crystalline $\sqrt{3}$ $\times$ $\sqrt{3}$ R30° phase, as well as less densely packed 3 $\times$ 3 and 4 $\times$ 4 structures. The hydrogenation can be reversed by imaging with higher bias voltage.

cond-mat.mes-hall↗

arXiv2015

Native defects in ultra-high vacuum grown graphene islands on Cu(111)

We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum (UHV) decomposition of ethylene on Cu(111). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.

cond-mat.mes-hall↗

arXiv2015

Modification of electronic surface states by graphene islands on Cu(111)

We present a study of graphene/substrate interactions on UHV-grown graphene islands with minimal surface contamination using \emph{in situ} low-temperature scanning tunneling microscopy (STM). We compare the physical and electronic structure of the sample surface with atomic spatial resolution on graphene islands versus regions of bare Cu(111) substrate. We find that the Rydberg-like series of image potential states is shifted toward lower energy over the graphene islands relative to Cu(111), indicating a decrease in the local work function, and the resonances have a much smaller linewidth, indicating reduced coupling to the bulk. In addition, we show the dispersion of the occupied Cu(111) Shockley surface state is influenced by the graphene layer, and both the band edge and effective mass are shifted relative to bare Cu(111).

cond-mat.mes-hall↗

arXiv2011

Blazar Compton efficiencies: Fermi, external photons and the Sequence

The Fermi-LAT survey provides a large sample of blazars selected on the strength of their inverse Compton emission. We cross-correlate the first Fermi-LAT catalogue with the CRATES radio catalogue and use this sample to investigate whether blazar gamma-ray luminosities are influenced by the availability of external photons to be up-scattered. Using the 8.4 GHz flux densities of their compact radio cores as a proxy for their jet power, we calculate their Compton Efficiency parameters, which measure the ability of jets to convert power in the form of ultra-relativistic electrons into Compton gamma-rays. We find no clear differences in Compton efficiencies between BL Lac objects and FSRQs and no anti-correlation between Compton efficiency and synchrotron peak frequency. This suggests that the scattering of external photons is energetically unimportant compared to the synchrotron self-Compton process. These results contradict the predictions of the blazar sequence.

astro-ph.CO↗

arXiv2010

Transport properties of two laterally coupled vertical quantum dots in series with tunable inter-dot coupling

We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and negative source-drain voltages in the weak coupling regime and observe current rectification due to the Pauli spin blockade when the hyperfine interaction between the electrons and the nuclei is suppressed.

cond-mat.mes-hall↗

arXiv2010

Quantum oscillations in the microwave magnetoabsorption of a 2D electron gas

We report on the experimental observation of the quantum oscillations in microwave magnetoabsorption of a high-mobility two-dimensional electron gas induced by Landau quantization. Using original resonance-cavity technique, we observe two kinds of oscillations in the magnetoabsorption originating from inter-Landau-level and intra-Landau-level transitions. The experimental observations are in full accordance with theoretical predictions. Presented theory also explains why similar quantum oscillations are not observed in transmission and reflection experiments on high-mobility structures despite of very strong effect of microwaves on the dc resistance in the same samples.

cond-mat.mes-hall↗

arXiv2009

The Survey of Extragalactic Nuclear Spectral Energies

We present the first results from the new Survey of Extragalactic Nuclear Spectral Energies (SENSE) sample of "blazars". The sample has been chosen with minimal selection effects and is therefore ideal to probe the intrinsic properties of the blazar population. We report evidence for negative cosmological evolution in this radio selected sample and give an outline of future work related to the SENSE sample.

astro-ph.CO↗

arXiv2009

Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule

We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device used in this study differs from previous vertical double quantum dot devices in that the single side gate is now split into four separate gates. Because of the presence of natural perturbations caused by anharmonicity and anistrophy, applying different combinations of voltages to these gates allows us to alter the effective potential landscape of the two dots and hence influence the level mixing. We present here preliminary results from one three level crossing and one four level crossings high up in the energy spectrum of one of the probed quantum dots, and demonstrate that we are able to change significantly the energy dispersions with magnetic field in the vicinity of the crossing regions.

cond-mat.mes-hall↗

arXiv2008

Incommensurability and atomic structure of c(2x2)N/Cu(100)

We use a scanning tunneling microscope operating in a low temperature, ultrahigh vacuum environment to study the atomic structure of single layer films of Cu2N grown on Cu(100). The c(2x2) lattice of Cu2N is incommensurate, with a lattice constant of 3.72 +/- 0.02 angstrom that is 3% larger than the bare Cu(100) surface. This finding suggests that strain due to lattice mismatch contributes to self assembly in this system. We find that the image contrast on Cu2N islands depends on bias voltage, which reconciles several interpretations in the literature. We assign features in these STM images to the Cu, N and hollow sites in the Cu2N lattice with the aid of co-adsorbed CO molecules. This atomic registry allows us to characterize four different defects on Cu2N, which influence the sticking coefficient and electronic coupling of adsorbates.

cond-mat.mtrl-sci↗

arXiv2007

Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas

The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.

cond-mat.mes-hall↗

arXiv2007

Two level anti-crossings high up in the single-particle energy spectrum of a quantum dot

We study the evolution with magnetic field of the single-particle energy levels high up in the energy spectrum of one dot as probed by the ground state of the adjacent dot in a weakly coupled vertical quantum dot molecule. We find that the observed spectrum is generally well accounted for by the calculated spectrum for a two-dimensional elliptical parabolic confining potential, except in several regions where two or more single-particle levels approach each other. We focus on two two-level crossing regions which show unexpected anti-crossing behavior and contrasting current dependences. Within a simple coherent level mixing picture, we can model the current carried through the coupled states of the probed dot provided the intrinsic variation with magnetic field of the current through the states (as if they were uncoupled) is accounted for by an appropriate interpolation scheme.

cond-mat.mes-hall↗

arXiv2007

Magnetic field induced effects in the high source-drain bias current of weakly coupled vertical quantum dot molecules

We report on the basic properties of recently observed magnetic field resonance, induced time dependent oscillation, and hysteresis effects in the current flowing through two weakly coupled vertical quantum dots at high source-drain bias (up to a few tens of mV). These effects bare some similarity to those reported in the N=2 spin-blockade regime, usually for weak in-plane magnetic field, of quantum dot molecules and attributed to hyperfine coupling, except here the measurements are conducted outside of the spin-blockade regime and the out-of-plane magnetic field is up to ~6 T.

cond-mat.mes-hall↗

arXiv2007

Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors

In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.

cond-mat.mes-hall↗

arXiv2004

Local environment of Nitrogen in GaN{y}As{1-y} epilayers on GaAs (001) studied using X-ray absorption near edge spectroscopy

X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were used to predict XANES via multiple-scattering theory. We obtain striking agreement for pure GaN. An alloy model with nitrogen pairs on Ga accurately predicts the threshold energy, the width of the XANES ``white line'', and features above threshold, for the given X-ray polarization. The presence of N-pairs may point to a role for molecular N_2 in epitaxial growth kinetics.

cond-mat.mtrl-sci↗

arXiv2002

Spin dynamics in semiconductor nanocrystals

Time-resolved Faraday rotation is used to study both transverse and longitudinal spin relaxation in chemically-synthesized CdSe nanocrystals (NCs) 22-80 Angstroms in diameter. The precession of optically-injected spins in a transverse magnetic field occurs at distinct frequencies whose assignment to electron and exciton spins is developed through systematic studies of the size-dependence and theoretical calculations. It is shown that the transverse spin lifetime is limited by inhomogeneous dephasing to a degree that cannot be accounted for by the NC size distribution alone. Longitudinal spin relaxation in these NCs occurs on several distinct timescales ranging from 100 ps-10 microseconds and exhibits markedly different dependencies on temperature and field in comparison to transverse spin relaxation.

cond-mat.mes-hall↗