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J. Avila

Publications and source records attributed to J. Avila.

At least 19 recordsLinked to original sources
arXiv2026

Electron-phonon coupling across the TMD/hBN van der Waals interface

Many-body interactions can couple electronic states in one layer with collective excitations in the adjacent layer, providing a route to tailor properties of heterostructures. However, detecting and quantifying interlayer many-body interactions proved a major challenge. Here, we demonstrate that quasiparticles in monolayer transition metal dichalcogenides (TMDs) are dressed by a remote cloud of phonons in the adjacent hexagonal boron nitride slab. Using angle resolved photoemission, we identify replica bands in the TMDs which are a clear fingerprint of long-range electron-phonon interaction. We develop a modified Fr\"ohlich model that shows semi-quantitative agreement with the experimental spectral functions. Our analysis shows that remote electron-phonon coupling is a generic property of interfaces with hBN. This has implications for electron mobilities in 2D materials, for superconductivity and possibly for moir\'e correlated phases.

cond-mat.mtrl-sci↗
arXiv2026

Sliding Charge Density Wave observed through Band Structure

An incommensurate CDW may have the ability to slide, i.e., to generate an excess of current when the system is submitted to an external field. Sliding phenomenon is closely related to deformation of the periodic lattice distortion associated to the CDW. In principle, however, the sliding state can also be observed through the band structure. Here we show that broken symmetry in k-space is observed by Angle-Resolved Photoemission Spectroscopy (ARPES) in the sliding regime of TbTe$_3$, which could be consistent with theoretical predictions.

cond-mat.str-el↗
arXiv2025

Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study

Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors, transistors, p-n junctions, photo-detectors, etc. Many different techniques have been developed to achieve desired doping in 2D materials, like chemical doping, electrostatic doping, substrate doping, etc. Here, we have combined space charge doping with space and angle resolved photoemission (nano-ARPES), in order to directly observe the Fermi level modulation on micron-sized flakes of monolayer and bilayer graphene. The doping level can be tuned in a controlled manner, which allows us to directly observe the Fermi level tuning. In our experiment we successfully doped the graphene with p- and n-type carriers (holes/electrons) which are directly observed through band shift in ARPES measurements. The observed band shift is $\sim$250 meV for bilayer and $\sim$500 meV for monolayer graphene. The results from our experiment promote the space charge doping technique and nano-ARPES into other materials such as 2D semiconductors and superconductors, in order to directly observe the physical phenomena such as band gap transition and phase transition as function of carrier doping.

cond-mat.mtrl-sci↗
arXiv2020

Superconducting islands with semiconductor-nanowire-based topological Josephson junctions

We theoretically study superconducting islands based on semiconductor-nanowire Josephson junctions and take into account the presence of subgap quasiparticle excitations in the spectrum of the junction. Our method extends the standard model Hamiltonian for a superconducting charge qubit and replaces the Josephson potential by the Bogoliubov--de Gennes Hamiltonian of the nanowire junction, projected onto the relevant low-energy subgap subspace. This allows to fully incorporate the coherent dynamics of subgap levels in the junction. The combined effect of spin-orbit coupling and Zeeman energy in the nanowires forming the junction triggers a topological transition, where the subgap levels evolve from finite-energy Andreev bound states into near-zero energy Majorana bound states. The interplay between the microscopic energy scales governing the nanowire junction (the Josephson energy, the Majorana coupling and the Majorana energy splitting), with the charging energy of the superconducting island, gives rise to a great variety of physical regimes. Based on this interplay of different energy scales, we fully characterize the microwave response of the junction, from the Cooper pair box to the transmon regimes, and show how the presence of Majoranas can be detected through distinct spectroscopic features. In split-junction geometries, the plasma mode couples to the phase-dispersing subgap levels resulting from Majorana hybridization via a Jaynes--Cummings-like interaction. As a consequence of this interaction, higher order plasma excitations in the junction inherit Majorana properties, including the $4π$ effect.

cond-mat.supr-con↗
arXiv2020

Majorana oscillations and parity crossings in semiconductor-nanowire-based transmon qubits

We show that the microwave (MW) spectra in semiconductor-nanowire-based transmon qubits provide a strong signature of the presence of Majorana bound states in the junction. This occurs as an external magnetic field tunes the wire into the topological regime and the energy splitting of the emergent Majorana modes oscillates around zero energy owing to their wave function spatial overlap in finite-length wires. In particular, we discuss how these Majorana oscillations, and the concomitant fermion parity switches in the ground state of the junction, result in distinct spectroscopic features --in the form of an intermitent visibility of absorption lines-- that strongly deviate from standard transmon behavior. In contrast, non-oscillating zero modes, such as topologically trivial Andreev bound states resulting from sufficiently smooth potentials, exhibit an overall standard transmon response. These differences in the MW response could help determine whether the junction contains topological Majoranas or not.

cond-mat.mes-hall↗
arXiv2019

Introducing strong correlation effects into graphene by gadolinium intercalation

Exotic ordered ground states driven by electronic correlations are expected to be induced in monolayer graphene when doped to the Van Hove singularity. Such doping levels are reached by intercalating Gd in graphene on SiC(0001), resulting in a strong homogeneity and stability. The electronic spectrum now exhibits severe renormalizations. Flat bands develop which is driven by electronic correlations according to our theoretical studies. Due to strong electron-phonon coupling in this regime, polaron replica bands develop. Thus, interesting ordered ground states should be made accessible.

cond-mat.str-el↗
arXiv2018

Non-Hermitian topology: a unifying framework for the Andreev versus Majorana states controversy

Andreev bound states (ABSs) in hybrid semiconductor-superconductor nanowires can have near-zero energy in parameter regions where band topology predicts trivial phases. This surprising fact has been used to challenge the interpretation of a number of transport experiments in terms of non-trivial topology with Majorana zero modes (MZMs). We show that this ongoing ABS versus MZM controversy is fully clarified when framed in the language of non-Hermitian topology, the natural description for open quantum systems. This change of paradigm allows us to understand topological transitions and the emergence of pairs of zero modes more broadly, in terms of exceptional point (EP) bifurcations of system eigenvalue pairs in the complex plane. Within this framework, we show that some zero energy ABSs are actually non-trivial, and share all the properties of conventional MZMs, such as the recently observed $2e^2/h$ conductance quantization. From this point of view, any distinction between such ABS zero modes and conventional MZMs becomes artificial. The key feature that underlies their common non-trivial properties is an asymmetric coupling of Majorana components to the reservoir, which triggers the EP bifurcation.

cond-mat.mes-hall↗
arXiv2018

Quasi-two-dimensional thermoelectricity in SnSe

Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications.

cond-mat.mtrl-sci↗
arXiv2016

Emerging one-dimensionality from self-organization of electrons in NbSe$_3$

Materials where the electron filling is close to commensurate filling provide one of the great challenges in materials science. Several proposals of unconventional orderings, where the electronic liquid self-organizes into components with distinct properties, were recently put forward, in particular in cuprates and pnictides where electronic nematic orders have been observed. The electrons self-organization is expected to yield complex intra and inter unit cell patterns, and a reduction of dimensionality. Nevertheless, an unambiguous experimental proof of such complex orders, namely the direct observation of distinct dispersions, is still missing. Here we report a Nano Angle Resolved Photo-emission Spectroscopy (Nano-ARPES) study of NbSe$_3$, a material that has been considered a paradigm of charge order. The new data (Fig.1) invalidate the canonical picture of imperfect nesting and reveals the emergence of a novel order. The electrons self-organization uncovers the one-dimensional (1D) physics hidden in a material which naively should be the most 3D of all columnar chalcogenides.

cond-mat.str-el↗
arXiv2016

Direct growth of low-doped graphene on Ge/Si(001) surfaces

The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by $30^\circ$ with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.

cond-mat.mtrl-sci↗
arXiv2015

Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$

For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening.

cond-mat.mtrl-sci↗
arXiv2015

Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling

We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Green's function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations.

cond-mat.mtrl-sci↗
arXiv2003

Curie temperature enhancement of electron doped Sr$_2$FeMoO$_6$ perovskites studied by photoemission spectroscopy

We report here on the electronic structure of electron-doped half-metallic ferromagnetic perovskites such Sr$_{2-x}$La$_x$FeMoO$_6$ ($x$=0-0.6) as obtained from high-resolved valence-band photoemission spectroscopy (PES). By comparing the PES spectra with band structure calculations, a distinctive peak at the Fermi level (E$_F$) with predominantly (Fe+Mo) t$_{2g}^\downarrow$ character has been evidenced for all samples, irrespectively of the $x$ values investigated. Moreover, we show that the electron doping due to the La substitution provides selectively delocalized carriers to the t$_{2g}^\downarrow$ metallic spin channel. Consequently, a gradual rising of the density of states at the E$_F$ has been observed as a function of the La doping. By changing the incoming photon energy we have shown that electron doping mainly rises the density of states of Mo parentage. These findings provide fundamental clues for understanding the origin of ferromagnetism in these oxides and shall be of relevance for tailoring oxides having still higher T$_C$.

cond-mat.str-el↗
arXiv2001

How different Fermi surface maps emerge in photoemission from Bi2212

We report angle-resolved photoemission spectra (ARPES) from the Fermi energy ($E_F$) over a large area of the ($k_x,k_y$) plane using 21.2 eV and 32 eV photons in two distinct polarizations from an optimally doped single crystal of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212), together with extensive first-principles simulations of the ARPES intensities. The results display a wide-ranging level of accord between theory and experiment and clarify how myriad Fermi surface (FS) maps emerge in ARPES under various experimental conditions. The energy and polarization dependences of the ARPES matrix element help disentangle primary contributions to the spectrum due to the pristine lattice from those arising from modulations of the underlying tetragonal symmetry and provide a route for separating closely placed FS sheets in low dimensional materials.

cond-mat.supr-con↗
arXiv2001

Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces

Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, and very uniform non-strained Ag(111) films of 6-12 monolayers have been grown. Angle resolved photoemission spectroscopy has been used to study the valence band electronic properties of these films. Well-defined Ag sp quantum-well states (QWS) have been observed at discrete energies between 0.5-2eV below the Fermi level, and their dispersions have been measured along the GammaK, GammaMM'and GammaL symmetry directions. QWS show a parabolic bidimensional dispersion, with in-plane effective mass of 0.38-0.50mo, along the GammaK and GammaMM' directions, whereas no dispersion has been found along the GammaL direction, indicating the low-dimensional electronic character of these states. The binding energy dependence of the QWS as a function of Ag film thickness has been analyzed in the framework of the phase accumulation model. According to this model, a reflectivity of 70% has been estimated for the Ag-sp states at the Ag/H/Si(111)-(1x1) interface.

cond-mat.soft↗
arXiv2001

Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces

Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Submonolayer films were semiconducting and the onset of metallization was found at a Ag coverage of $\sim$0.6 monolayers. Two surface states were observed at $\barΓ$-point in the metallic films, with binding energies of 0.1 and 0.35 eV. By measurements of photoelectron angular distribution at the Fermi level in these films, a cross-sectional cut of the Fermi surface was obtained. The Fermi vector determined along different symmetry directions and the photoelectron lifetime of states at the Fermi level are quite close to those expected for Ag single crystal. In spite of this concordance, the Fermi surface reflects a sixfold symmetry rather than the threefold symmetry of Ag single crystal. This behavior was attributed to the fact that these Ag films are composed by two domains rotated 60$^o$.

cond-mat.mtrl-sci↗
arXiv2001

Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7)

Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectron spectroscopy (ARPES). In addition to the electronic band dispersion along the high-symmetry directions, the Fermi surface topology of the grown films has been investigated. Using ARPES, the spectral weight distribution at the Fermi level throughout large portions of the reciprocal space has been determined at particular perpendicular electron-momentum values. Systematically, the contours of the Fermi surface of these films reflected a sixfold symmetry instead of the threefold symmetry of Ag single crystal. This loss of symmetry has been attributed to the fact that these films appear to be composed by two sets of domains rotated 60$^o$ from each other. Extra, photoemission features at the Fermi level were also detected, which have been attributed to the presence of surface states and \textit{sp}-quantum states. The dimensionality of the Fermi surface of these films has been analyzed studying the dependence of the Fermi surface contours with the incident photon energy. The behavior of these contours measured at particular points along the Ag $Γ$L high-symmetry direction puts forward the three-dimensional character of the electronic structure of the films investigated.

cond-mat.mtrl-sci↗