arXiv subjects

J. Barnaś

Publications and source records attributed to J. Barnaś.

At least 19 recordsLinked to original sources

arXiv2024

Longitudinal magnetoresistance in graphene with random Rashba spin-orbit interaction

We consider longitudinal electronic transport in a graphene monolayer with an external in-plane magnetic field and with extrinsic spin-orbit Rashba interaction. Our main interest is in the in-plane magnetoresistance, observed experimentally. We show, that scattering on Rashba spin-orbit fluctuations leads to a negative magnetoresistance, in agreement with experimental observations. To calculate transport properties we assume an effective model valid for low energy states around the Dirac points, and use the Green function method to derive the electron scattering rate and longitudinal conductivity.

cond-mat.mes-hall↗

arXiv2024

Topological charge and spin Hall effects due to skyrmions in canted antiferromagnets

The topological charge-Hall effect (TCHE) and the topological spin-Hall effect (TSHE), arising from ferromagnetic (FM) and antiferromagnetic (AFM) skyrmions, respectively; can be elucidated through the emergence of spin-dependent Berry gauge fields that affect the adiabatic flow of electrons within the skyrmion texture. TCHE is absent in systems with parity-time (PT) symmetry, such as collinear AFM systems. In this paper, we theoretically study TCHE and TSHE in a canted antiferromagnetic within the diffusive transport regime. Spin canting or weak ferromagnetism in canted AFMs, which break the PT symmetry, may arise, e.g., from strong homogeneous Dzyaloshinskii-Moriya interactions. Using a semiclassical Boltzmann approach, we obtain diffusion equations for the spin and charge accumulations in the presence of finite spin-flip and spin-dependent momentum relaxation times. We show that the weak ferromagnetic moment stemming from spin canting and the subsequent breaking of parity-time symmetry results in the emergence of both finite TCHE and TSHE in AFM systems.

cond-mat.mes-hall↗

arXiv2023

Steering skyrmions with microwave and THz electric pulses

Tools for controlling electrically the motion of magnetic skyrmions are important elements towards their use in spintronic devices. Here, we propose and demonstrate the transport of skyrmions via GHz and THz electric pulses. The method relies on using polarization textured pulses such that the skyrmion experiences (via its inherent magnetoelectricity) the out-of-plane and in-plane components of the pulse electric field. It is shown how the electric field drags efficiently the skyrmion. The control of the skyrmion motion depends solely on the amplitude of electric fields, frequency, polarization, or phase in case two pulses are applied. Micromagnetic calculations supported by analytic modeling and analysis indicate the experimental feasibility of the control scheme.

cond-mat.str-el↗

arXiv2022

Bilinear planar Hall effect in topological insulators due to spin-momentum locking inhomogeneity

We study the effect of spin-momentum locking inhomogeneity on the planar Hall effect in topological insulators (TIs). Using the minimal model describing surface states of 3D TIs and semiclassical Boltzmann formalism, we have derived the planar Hall conductivity within the generalized relaxation time approximation. We have found that the total planar Hall conductivity is a sum of linear and nonlinear to the external electric field components. The linear term is a conventional planar Hall conductivity which scales quadratically with an external magnetic field, whereas the nonlinear term reveals bilinear behaviour, i.e., changes its sign when either charge current density or in-plane magnetic field orientation is reversed. We have shown that the emergent nonlinear planar Hall effect is a consequence of spin-momentum locking inhomogeneity in the TIs with isotropic energy dispersion and dominates under the conventional planar Hall effect.

cond-mat.mes-hall↗

arXiv2022

Skyrmion lattice hosted in synthetic antiferromagnets and helix modes

Thin ferromagnetic films can possess unconventional magnetic properties, opening a new road for using them in spintronic technologies. In the present work exploiting three different methods, we comprehensively analyze phason excitations of a skyrmion lattice in synthetic antiferromagnets. To analyze phason excitations of the skyrmion lattice, we have constructed an analytical model based on three coupled helices and found a linear gapless mode. Micromagnetic simulations also support this result. Moreover, a similar result has been achieved within the rigid skyrmion lattice model based on the coupled Thiele's equations, when the coupling between skyrmions in different layers of the synthetic antiferromagnetic is comparable to or larger than the intralayer coupling. In addition, we also consider the orbital angular momentum and spin pumping current associated with phason excitations. Due to the gapless excitations in the case of skyrmion lattice, the pumping current is nonzero for the arbitrary frequency of pumping microwaves. In the case of individual skyrmions, no current is pumped when microwave frequency is inside the gap of the spectrum of individual skyrmions.

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arXiv2022

Skyrmion Echo in a system of interacting Skyrmions

We consider helical rotation of skyrmions confined in the potentials formed by nano-disks. Based on numerical and analytical calculations we propose the skyrmion echo phenomenon. The physical mechanism of the skyrmion echo formation is also proposed. Due to the distortion of the lattice, impurities, or pinning effect, confined skyrmions experience slightly different local fields, which leads to dephasing of the initial signal. The interaction between skyrmions also can contribute to the dephasing process. However, switching the magnetization direction in the nanodiscs (e.g. by spin transfer torque) also switches the helical rotation of the skyrmions from clockwise to anticlockwise (or vice-versa), and this restores the initial signal (which is the essence of skyrmion echo).

cond-mat.str-el↗

arXiv2022

Spin valve effect in two-dimensional VSe$_2$ system

Vanadium based dichalcogenides, VSe$_2$, are two-dimensional materials in which magnetic Vanadium atoms are arranged in a hexagonal lattice and are coupled ferromagnetically within the plane. However, adjacent atomic planes are coupled antiferromagnetically. This provides new and interesting opportunities for application in spintronics and data storage and processing technologies. A spin valve magnetoresistance may be achieved when magnetic moments of both atomic planes are driven to parallel alignment by an external magnetic field. The resistance change associated with the transition from antiparallel to the parallel configuration is qualitatively similar to that observed in artificially layered metallic magnetic structures. Detailed electronic structure of VSe$_2$ was obtained from DFT calculations. Then, the ballistic spin-valve magnetoresistance was determined within the Landauer formalism. In addition, we also analyze thermal and thermoelectric properties. Both phases of VSe$_2$, denoted as H and T, are considered.

cond-mat.mtrl-sci↗

arXiv2021

Graphene with Rashba spin-orbit interaction and coupling to a magnetic layer: Electron states localized at the domain wall

Electron states localized at a magnetic domain wall in a graphene caplayer with Rashba spin-orbit interaction and coupled to a magnetic overlayer are studied theoretically. It is shown that two one-dimensional bands of edge modes propagating along the domain wall emerge in the energy gap for each Dirac point, and the modes associated with different Dirac points K and K' are the same. The coefficients describing decay of the corresponding wavefunctions with distance from the domain wall contain generally real and imaginary terms. Numerical results on the local spin density and on the total spin expected in the edge states characterized by the wavenumber $k_y$ are presented and discussed. The Chern number for a single magnetic domain on graphene indicates that the system is in the quantum anomalous Hall phase, with two chiral modes at the edges. In turn, the number of modes localized at the domain wall is determined by the difference in Chern numbers on both sides of the wall. These numbers are equal to 2 and -2, respectively, so there are four modes localized at the domain wall.

cond-mat.mes-hall↗

arXiv2020

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.

cond-mat.mes-hall↗

arXiv2020

Stratonovich-Ito integration scheme in ultrafast spin caloritronics

The magnonic spin Seebeck effect is a key element of spin caloritronic, a field that exploits thermal effects for spintronic applications. Early studies were focused on investigating the steady-state nonequilibrium magnonic spin Seebeck current, and the underlying physics of the magnonic spin Seebeck effect is now relatively well established. However, the initial steps of the formation of the spin Seebeck current are in the scope of recent interest. To address this dynamical aspect theoretically we propose here a new approach to the time-resolved spin Seebeck effect. Our method exploits the supersymmetric theory of stochastics and Ito - Stratonovich integration scheme. We found that in the early step the spin Seebeck current has both nonzero transversal and longitudinal components. As the magnetization dynamics approaches the steady-state, the transversal components decay through dephasing over the dipole-dipole reservoir. The time scale for this process is typically in the sub-nanoseconds pointing thus to the potential of an ultrafast control of the dynamical spin Seebeck during its buildup.

cond-mat.mes-hall↗

arXiv2020

Chiral Hall effect in the kink states in topological insulators with magnetic domain walls

In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.

cond-mat.mes-hall↗

arXiv2020

The optical tweezer of ferroelectric skyrmions

Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis.

cond-mat.mtrl-sci↗

arXiv2019

Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators

A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.

cond-mat.mes-hall↗

arXiv2019

Conduction of surface electrons in a topological insulator with spatially random magnetization

Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction.

cond-mat.mes-hall↗

arXiv2017

Anomalous, spin, and valley Hall effects in graphene deposited on ferromagnetic substrates

Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the spin, anomalous and valley Hall conductivities we employ certain effective Hamiltonians which have been proposed recently for the hybrid systems under considerations. Both anomalous and valley Hall conductivities have universal values when the Fermi level is inside the energy gap in the electronic spectrum.

cond-mat.mes-hall↗

arXiv2016

Spin-resolved orbital magnetization in Rashba two-dimensional electron gas

We calculate orbital spin-dependent magnetization in a two-dimensional electron gas with spin-orbit interaction of Rashba type. Such an orbital magnetization is admitted by the time-reversal symmetry of the system, and gives rise to spin currents when the system is not in thermal equilibrium. The theoretical approach is based on the linear response theory and the Matsubara Green's function formalism. To account for the spin-resolved orbital magnetization a spin-dependent vector potential has been introduced. The spin currents which appear in thermal nonequilibrium due to the spin-resolved orbital magnetization play an important role in the spin Nernst effect, and have to be included in order to correctly describe the low-temperature spin Nernst conductivity.

cond-mat.mes-hall↗

arXiv2016

Spin Hall and spin Nernst effects in a two-dimensional electron gas with Rashba spin-orbit interaction: temperature dependence

Using the Matsubara Green function formalism we calculate the temperature dependence of spin Hall and spin Nernst conductivities of a two-dimensional electron gas with Rashba spin-orbit interaction in the linear response regime. In the case of spin Nernst effect we also include the contribution from spin-resolved orbital magnetization, which assures correct behavior of the spin Nernst conductivity in the zero-temperature limit. Analytical formulas for the spin Hall and spin Nernst conductivities are derived in some specific situations. Using the Ioffe-Regel localization criterion, we have also estimated the range of parameters where the calculated results for the spin Hall and spin Nernst conductivities are applicable. Analytical results show that the vertex correction totally suppresses the spin Hall conductivity at arbitrary temperature. The spin Nernst conductivity, in turn, vanishes at $T=0$ when the orbital contribution is taken into account, but generally is nonzero at finite temperatures.

cond-mat.mes-hall↗

arXiv2015

Two-dimensional electron gas at the LaAlO$_3$/SrTiO$_3$ inteface with a potential barrier

We present a tight binding description of electronic properties of the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO). The description assumes LAO and STO perovskites as sets of atomic layers in the $x$-$y$ plane, which are weakly coupled by an interlayer hopping term along the $z$ axis. The interface is described by an additional potential, $U_0$, which simulates a planar defect. Physically, the interfacial potential can result from either a mechanical stress at the interface or other structural imperfections. We show that depending on the potential strength, charge carriers (electrons or holes) may form an energy band which is localized at the interface and is within the band gaps of the constituting materials (LAO and STO). Moreover, our description predicts a {\it valve effect} at a certain critical potential strength, $U_{0cr}$, when the interface potential works as a valve suppressing the interfacial conductivity. In other words, the interfacial electrons become dispersionless at $U_0= U_{0cr}$, and thus cannot propagate. This critical value separates the {\it quasielectron} ($U_0<$ $U_{0cr}$) and {\it quasihole} ($U_0>$ $U_{0cr}$) regimes of the interfacial conductivity.

cond-mat.str-el↗