arXiv subjects

J. Barnas

Publications and source records attributed to J. Barnas.

At least 37 records · Page 2Linked to original sources

arXiv2012

Controlling shot noise in double-barrier magnetic tunnel junctions

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.

cond-mat.mes-hall↗

arXiv2012

Manifestation of the shape and edge effects in spin-resolved transport through graphene quantum dots

We report on theoretical studies of transport through graphene quantum dots weakly coupled to external ferromagnetic leads. The calculations are performed by exact diagonalization of a tight-binding Hamiltonian with finite Coulomb correlations for graphene sheet and by using the real-time diagrammatic technique in the sequential and cotunneling regimes. The emphasis is put on the role of graphene flake shape and spontaneous edge magnetization in transport characteristics, such as the differential conductance, tunneling magnetoresistance (TMR) and the shot noise. It is shown that for certain shapes of the graphene dots a negative differential conductance and nontrivial behavior of the TMR effect can occur.

cond-mat.mes-hall↗

arXiv2012

Tunneling in double barrier junctions with 'hot spots'

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect.

cond-mat.mes-hall↗

arXiv2011

Anomalous Hall effect in superconductors with spin-orbit interaction

We calculate the anomalous Hall conductance of superconductors with spin-orbit interaction and with either uniform or local magnetization. In the first case we consider a uniform ferromagnetic ordering in a spin triplet superconductor, while in the second case we consider a conventional s-wave spin singlet superconductor with a magnetic impurity (or a diluted set of magnetic impurities). In the latter case we show that the anomalous Hall conductance can be used to track the quantum phase transition, that occurs when the spin coupling between the impurity and electronic spin density exceeds a certain critical value. In both cases we find that for large spin-orbit coupling the superconductivity is destroyed and the Hall conductance oscillates strongly.

cond-mat.supr-con↗

arXiv2011

Topological spin Hall and spin Nernst effects in a bilayer graphene

We consider intrinsic contributions to the spin Hall and spin Nernst effects in a bilayer graphene. The relevant electronic spectrum is obtained from the tight binding Hamiltonian, which also includes the intrinsic spin-orbit interaction. The corresponding spin Hall and spin Nernst conductivities are compared with those obtained from effective Hamiltonians appropriate for states in the vicinity of the Fermi level of a neutral bilayer graphene. Both conductivities are determined within the linear response theory and Green function formalism. The influence of an external voltage between the two atomic sheets is also included. We found transition from the topological spin Hall insulator phase at low voltages to conventional insulator phase at larger voltages.

cond-mat.mes-hall↗

arXiv2011

Nonlinear spin Hall effect in GaAs (110) quantum wells

We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random Rashba spin-orbit coupling. The Dresselhaus term is uniform in the quantum well plane and gives rise to spin splitting of the electron band. The external electric field of frequency $ω$ - in the presence of random Rashba coupling -- leads to virtual spin-flip transitions between spin subbands, generating stationary pure spin current proportional to the square of the field amplitude.

cond-mat.mtrl-sci↗

arXiv2010

Spin dephasing and pumping in graphene due to random spin-orbit interaction

We consider spin effects related to the random spin-orbit interaction in graphene. Such a random interaction can result from the presence of ripples and/or other inhomogeneities at the graphene surface. We show that the random spin-orbit interaction generally reduces the spin dephasing (relaxation) time, even if the interaction vanishes on average. Moreover, the random spin-orbit coupling also allows for spin manipulation with an external electric field. Due to the spin-flip interband as well as intraband optical transitions, the spin density can be effectively generated by periodic electric field in a relatively broad range of frequencies.

cond-mat.mes-hall↗

arXiv2010

Robust to impurity-scattering spin Hall effect in two-dimensional electron gas

We propose a mechanism of spin Hall effect in two-dimensional electron gas with spatially random Rashba spin-orbit interaction. The calculations based on the Kubo formalism and kinetic equation show that in contrast to the constant spin-orbit coupling, spin Hall conductivity in the random spin-orbit field is not totally suppressed by the potential impurity scattering. Even if the regular contribution is removed by the vertex corrections, the terms we consider, remain. Therefore, the intrinsic spin-Hall effect exists being, however, non-universal.

cond-mat.mes-hall↗

arXiv2010

Nonlinear magnetotransport in dual spin valves

Recent experimental measurements of magnetoresistance in dual spin valves [A. Aziz et al., Phys. Rev. Lett. 103, 237203 (2009)] reveal some nonlinear features of transport, which have not been observed in other systems. We propose a phenomenological model describing current-dependent resistance (and giant magnetoresistance) in double spin valves. The model is based on a modified Valet-Fert approach, and takes into account the dependence of bulk/interface resistance and bulk/interface spin asymmetry parameters for the central magnetic layer on spin accumulation, and consequently on charge current. Such a nonlinear model accounts for recent experimental observations.

cond-mat.mes-hall↗

arXiv2010

Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier

Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are used to understand the conductance results. The obtained data indicate the breakdown of the Coulomb blockade for thickness of the asymmetric silicon layer exceeding 1.2Å. The crossover in the conductance, the dependence of the tunnelling magnetoresistance with the bias voltage and the noise below 80K correspond to 1 monolayer coverage. Interestingly, the zero bias magnetoresistance remains nearly unaffected by the presence of the silicon layer. The proposed model uses Larkin-Matveev approximation of tunnelling through a single impurity layer generalized to 3D and takes into account the variation of the barrier shape with the bias voltage. The main difference is the localization of all the impurity levels within a single atomic layer. In the high thickness case, up to 1.8Å, we have introduced a phenomenological parameter, which reflects the number of single levels on the total density of silicon atoms.

cond-mat.other↗

arXiv2009

Spin Hall effect in a system of Dirac fermions in the honeycomb lattice with intrinsic and Rashba spin-orbit interaction

We consider spin Hall effect in a system of massless Dirac fermions in a graphene lattice. Two types of spin-orbit interaction, pertinent to the graphene lattice, are taken into account - the intrinsic and Rashba terms. Assuming perfect crystal lattice, we calculate the topological contribution to spin Hall conductivity. When both interactions are present, their interplay is shown to lead to some peculiarities in the dependence of spin Hall conductivity on the Fermi level.

cond-mat.mtrl-sci↗

arXiv2009

Spin relaxation and combined resonance in two-dimensional electron systems with spin-orbit disorder

Disorder in spin-orbit (SO) coupling is an important feature of real low-dimensional electron structures. We study spin relaxation due to such a disorder as well as resulting abilities of spin manipulation. The spin relaxation reveals quantum effects when the spatial scale of the randomness is smaller than the electron wavelength. Due to the disorder in SO coupling, a time-dependent external electric field generates a spatially random spin-dependent perturbation. The resulting electric dipole spin resonance in a two-dimensional electron gas leads to spin injection in a frequency range of the order of the Fermi energy. These effects can be important for possible applications in spintronics.

cond-mat.mes-hall↗

arXiv2009

Computational study of microwave oscillations in absence of external field in nonstandard spin valves in the diffusive transport limit

An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between magnetizations, as predicted by spin-dependent diffusive transport model, and also confirmed experimentally. Making use of these predictions, we have numerically studied the magnetization dynamics in presence of such a wavy-torque in Co(8 nm)/Cu(10 nm)/Py(8 nm) nanopillar, considering geometry with extended and etched Co layer. In both cases we specify conditions for the out-of-plane precession to appear in absence of external magnetic field and neglecting thermal fluctuations. We prove the assumption of wavy-like torque angular dependence to be fully consistent with experimental observations. We also show that some features reported experimentally, like nonlinear slope of frequency vs. current behavior, are beyond the applicability range of macrospin approximation and can be explained only by means of full micromagnetic analysis.

cond-mat.mes-hall↗

arXiv2009

Correlation of the angular dependence of spin-transfer torque and giant magnetoresistance in the limit of diffusive transport in spin valves

Angular variation of giant magnetoresistance and spin-transfer torque in metallic spin-valve heterostructures is analyzed theoretically in the limit of diffusive transport. It is shown that the spin-transfer torque in asymmetric spin valves can vanish in non-collinear magnetic configurations, and such a non-standard behavior of the torque is generally associated with a non-monotonic angular dependence of the giant magnetoresistance, with a global minimum at a non-collinear magnetic configuration.

cond-mat.other↗

arXiv2008

Transport through a quantum dot subject to spin and charge bias: Kondo regime

Spin and charge transport through a quantum dot coupled to external nonmagnetic leads is analyzed theoretically in terms of the non-equilibrium Green function formalism based on the equation of motion method. The dot is assumed to be subject to spin and charge bias, and the considerations are focused on the Kondo effect in spin and charge transport. It is shown that the differential spin conductance as a function of spin bias reveals a typical zero-bias Kondo anomaly which becomes split when either magnetic field or charge bias are applied. Significantly different behavior is found for mixed charge/spin conductance. The influence of electron-phonon coupling in the dot on tunneling current as well as on both spin and charge conductance is also analyzed.

cond-mat.mes-hall↗

arXiv2008

Spin effects in single electron tunneling

An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are tunnel junctions -- single-barrier planar junctions or more complex ones. In this review we present and discuss recent theoretical results on electron and spin transport through ferromagnetic mesoscopic junctions including two or more barriers. Such systems are also called ferromagnetic single-electron transistors. We start from the situation when the central part of a device has the form of a magnetic (or nonmagnetic) metallic nanoparticle. Transport characteristics reveal then single-electron charging effects, including the Coulomb staircase, Coulomb blockade, and Coulomb oscillations. Single-electron ferromagnetic transistors based on semiconductor quantum dots and large molecules (especially carbon nanotubes) are also considered. The main emphasis is placed on the spin effects due to spin-dependent tunnelling through the barriers, which gives rise to spin accumulation and tunnel magnetoresistance. Spin effects also occur in the current-voltage characteristics, (differential) conductance, shot noise, and others. Transport characteristics in the two limiting situations of weak and strong coupling are of particular interest. In the former case we distinguish between the sequential tunnelling and cotunneling regimes. In the strong coupling regime we concentrate on the Kondo phenomenon, which in the case of transport through quantum dots or molecules leads to an enhanced conductance and to a pronounced zero-bias Kondo peak in the differential conductance.

cond-mat.mes-hall↗

arXiv2008

Spin diode based on a single-wall carbon nanotube

Electronic transport through a single-wall metallic carbon nanotube weakly coupled to one ferromagnetic and one nonmagnetic lead is analyzed in the sequential tunneling limit. It is shown that both the spin and charge currents flowing through such systems are highly asymmetric with respect to the bias reversal. As a consequence, nanotubes coupled to one nonmagnetic and one ferromagnetic lead can be effectively used as spin diodes whose functionality can be additionally controlled by a gate voltage.

cond-mat.mes-hall↗

arXiv2008

Kondo effect in quantum dots coupled to ferromagnetic leads with noncollinear magnetizations: effects due to electron-phonon coupling

Spin-polarized transport through a quantum dot strongly coupled to ferromagnetic electrodes with non-collinear magnetic moments is analyzed theoretically in terms of the non-equilibrium Green function formalism. Electrons in the dot are assumed to be coupled to a phonon bath. The influence of electron-phonon coupling on tunnelling current, linear and nonlinear conductance, and on tunnel magnetoresistance is studied in detail. Variation of the main Kondo peaks and phonon satellites with the angle between magnetic moments of the leads is analyzed.

cond-mat.mes-hall↗