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J. C. Souza

Publications and source records attributed to J. C. Souza.

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Evidence for a field-induced Lifshitz transition in the Weyl semimetal CeAlSi

The Weyl semimetal CeAlSi crystallises in the noncentrosymmetric tetragonal space group $I4_1md$ and exhibits ferromagnetic order below 8 K, thereby breaking both spatial inversion and time-reversal symmetries. This unique combination of properties establishes CeAlSi as a model system for studying the interplay between non-trivial topological states and strong electron correlations. In this work, we report observations of Shubnikov-de Haas oscillations in the electrical resistivity under magnetic fields up to 68 T applied parallel to the [001] crystallographic axis. Our measurements reveal an abrupt change in the oscillation frequencies near 14 T, which is indicative of a field-induced Lifshitz transition. Additionally, our results are consistent with the ferromagnetic order bringing the Weyl nodes closer to the Fermi level in CeAlSi. Furthermore, they suggest that the RKKY interaction plays an important role.

cond-mat.str-el

Tuning the topological character of half-Heusler systems: A comparative study on Y$T$Bi ($T$ = Pd, Pt)

Half-Heusler systems host a plethora of different ground states, especially with non-trivial topology. However, there is still a lack of spectroscopic insight into the corresponding band inversion in this family. In this work, we locally explore the half-Heuslers Y$T$Bi ($T =$ Pt and Pd) by means of scanning tunneling microscopy/spectroscopy. From our analysis of the (120) surface plane, we infer that the increase of the spin--orbit coupling upon going from Pd to Pt is the main player in tuning the surface states from trivial to topologically non-trivial. Our measurements unveil a ($2 \times 1$) reconstruction of the (120) surface of both systems. Using density functional theory calculations, we show that the observed different behavior of the local density of states near the Fermi level in these two materials is directly related to the presence of metallic surface states. Our work sheds new light on a well known tunable family of materials and opens new routes to explore the presence of topological states of matter in half-Heusler systems and its microscopic observation.

cond-mat.mtrl-sci

Topological Hall effect in CeAlGe

The Weyl semimetal CeAlGe is a promising material to study nontrivial topologies in real and momentum space due to the presence of a topological magnetic phase. Our results at ambient pressure show that the electronic properties of CeAlGe are extremely sensitive to small stoichiometric variations. In particular, the topological Hall effect (THE) present in CeAlGe is absent in some samples of almost identical chemical composition. The application of external pressure favors the antiferromagnetic ground state. It also induces a THE where it was not visible at ambient pressure. Furthermore, a small pressure is sufficient to drive the single region of the THE in magnetic fields into two different ones. Our results reveal an extreme sensitivity of the electronic properties of CeAlGe to tiny changes in its chemical composition, leading to a high tunability by external stimuli. We can relate this sensitivity to a shift in the Fermi level and to domain walls.

cond-mat.str-el

Magnetic interactions of 4$f$ electrons in the topological insulator chalcogenide Bi$_{2}$Se$_{3}$

The gap opening mechanism of a topological insulator, the quantum anomalous Hall effect and the axion physics are still pressing open questions and a microscopic viewpoint to further understand the role of magnetism in topology is highly desirable. In this work we have performed a microscopic investigation, by means of electron spin resonance (ESR) along with complementary bulk measurements, on the chalcogenide (Bi$_{1-x}$Gd$_{x}$)$_{2}$Se$_{3}$ ($x$ = 0, 0.001, 0.002 and 0.006). Our analysis of the Gd$^{3+}$ spin dynamics reveal no significant change of the Fermi surface as a function of Gd$^{3+}$ concentration, which indicates that the 4$f$ magnetism is different from the non-local effects induced by transition metals ($d$ electrons) substitutions. Additionally, we observe an unusual evolution of the Gd$^{3+}$ ESR spectra as a function of the applied magnetic field, which we discuss considering the magnetic interaction between Gd$^{3+}$ 4$f$ electrons and impurity centers such as Se vacancies. This interaction would give rise to a local weak antilocalization effect surrounding the Gd$^{3+}$ ions. Such mechanism is observable due to particular details of the Gd$^{3+}$ 4$f$ electrons magnetism in this system compared to $d$ electrons. Our work points out that rare earth substitutions in this model topological insulator is a promising path to explore the axion insulating systems.

cond-mat.mtrl-sci

Slow crystalline electric field fluctuations in the Kondo lattice SmB$_{6}$

This work reports on the temperature dependence of the electron spin resonance (ESR) of Gd$^{3+}$-doped SmB$_{6}$ single crystals at X- and Q-band microwave frequencies in different crystallographic directions. We found an anomalous inhomogeneous broadening of the Gd$^{3+}$ ESR linewidth ($ΔH$) within 5.3 K $\leq T \leq$ 12.0 K which is attributed to slow crystalline electric field (CEF) fluctuations, slower than the timescale of the ESR microwave frequencies used ($\sim$10 GHz). This linewidth inhomogeneity may be associated to the coupling of the Gd$^{3+}$ $S$-states to the breathing mode of the SmB$_{6}$ cage, and can be simulated by a random distribution of the 4$^{th}$ CEF parameter, $b_4$, that strikingly takes negative and positive values. The temperature at which this inhomogeneity sets in, is related to the onset of a continuous insulator-to-metal phase transition. In addition, based on the interconfigurational fluctuation relaxation model, the observed exponential $T$-dependence of $ΔH$ above $T\simeq$ 10 K gives rise to an excitation energy notably close to the hybridization gap of SmB$_{6}$ ($Δ\simeq$ 60 K). This charge fluctuation scenario provides important ingredients to the physical properties of SmB$_{6}$. We finally discuss the interplay between charge and valence fluctuations under the view of slow CEF fluctuations in SmB$_{6}$ by coupling the Gd$^{3+}$ ions to the breathing phonon mode via a dynamic Jahn-Teller-like mechanism.

cond-mat.str-el

Orbital localization and the role of the Fe and As $4p$ orbitals in BaFe$_{2}$As$_{2}$ probed by XANES

The polarization dependence of the near edge x-ray absorption spectroscopy (XANES) is an element specific probe to the real-space distribution of the density of unoccupied states in solid-state materials. In this paper, we present Fe and As $K$-edge experiments of Ba(Fe$_{1-x}$$M_{x}$)$_{2}$As$_{2}$ ($M=$ Mn, Co and $x=0.0$ and $0.08$). The experiments reveal a strong polarization dependence of the probed XANES spectra, which concerns mainly an increase of the intensity of electronic transitions when the beam polarization is set out of the sample's $ab$ crystallographic plane. The results show that states with $p_{z}$-orbital character dominate the density of unoccupied states close to the Fermi level. Partial substitution of Fe by Co is shown to decrease the intensity anisotropy, suggesting that Co promotes electronic transfer preferentially to states with $p_{z}$-orbital character. On the other hand, Mn substitution causes the increase of the spectra $p_{z}$-orbital anisotropy, which is proposed to take place by means of an enhanced local Fe $3d4p$ mixing, unveiling the role of Fe $4p$ states in the localization of the Fe $3d$ orbitals. Moreover, by comparing our results to previous experiments, we identify the relative mixing between Fe and the pnictide $4p_{x,y,z}$ orbitals as a clear divide between the electronic properties of iron arsenides and selenides. Our conclusions are supported by multiple-scattering theory calculations of the XANES spectra and by quantum chemistry calculations of Fe coordination electronic structure.

cond-mat.str-el

Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$

Colossal magnetoresistance (CMR) emerges from intertwined spin and charge degrees of freedom in the form of ferromagnetic clusters also known as trapped magnetic polarons. As a result, CMR is rarely observed in antiferromagnetic materials. Here we use electron spin resonance (ESR) to reveal microscopic evidence for the formation of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$. First, we observe a reduction of the Eu$^{2+}$ ESR linewidth as a function of the applied magnetic field consistent with ferromagnetic clusters that are antiferromagnetically coupled. Additionally, the Eu$^{2+}$ lineshape changes markedly below T' ~ 200 K, a temperature scale that coincides with the onset of CMR. The combination of these two effects provide strong evidence that magnetic polarons grow in size below T' and start influencing the macroscopic properties of the system.

cond-mat.str-el

Tuning the nontrivial topological properties of the Weyl semimetal CeAlSi

In the ferromagnetic Weyl semimetal CeAlSi both space-inversion and time-reversal symmetries are broken. We use external pressure as an effective tuning parameter and relate three observations to the presence of a nontrivial topology in its ferromagnetic regime: an exceptional temperature response of the quantum oscillations amplitude, the presence of an anomalous Hall effect (AHE), and the existence of an unusual loop Hall effect (LHE). We find a suppression of the AHE and the LHE with increasing pressure, while the Curie temperature is enhanced. The magnetic structure and the electronic bands exhibit only a negligible pressure effect suggesting the importance of the domain wall landscape for the topological behavior in CeAlSi.

cond-mat.mtrl-sci

Surface excitations relaxation in the Kondo insulator Sm$_{1-x}$Gd$_{x}$B$_{6}$

The interplay between non-trivial topological states of matter and strong electronic correlations is one of the most compelling open questions in condensed matter physics. Due to experimental challenges, there is an increasing desire to find more microscopic techniques to complement the results of more traditional experiments. In this work, we locally explore the Kondo insulator Sm$_{1-x}$Gd$_{x}$B$_{6}$ by means of electron spin resonance (ESR) of Gd$^{3+}$ ions at low temperatures. Our analysis reveals that the Gd$^{3+}$ ESR line shape shows an anomalous evolution as a function of temperature, wherein for highly dilute samples (x $\approx$ 0.0002) the Gd$^{3+}$ ESR line shape changes from a localized ESR local moment character to a diffusive-like character. Upon manipulating the sample surface with a focused ion beam we demonstrate, in combination with electrical resistivity measurements, that the localized character of the Gd$^{3+}$ ESR line shape is recovered by increasing the penetration of the microwave in the sample. This provides compelling evidence for the contribution of surface or near-surface excitations to the relaxation mechanism in the Gd$^{3+}$ spin dynamics. Our work brings new insights into the importance of non-trivial surface excitations in ESR, opening new routes to be explored both theoretically and experimentally.

cond-mat.str-el

Systematic manipulation of the surface conductivity of SmB$_6$

We show that the resistivity plateau of SmB$_6$ at low temperature, typically taken as a hallmark of its conducting surface state, can systematically be influenced by different surface treatments. We investigate the effect of inflicting an increasing number of hand-made scratches and microscopically defined focused ion beam-cut trenches on the surfaces of flux-grown Sm$_{1-x}$Gd$_x$B$_6$ with $x =$ 0, 0.0002. Both treatments increase the resistance of the low-temperature plateau, whereas the bulk resistance at higher temperature largely remains unaffected. Notably, the temperature at which the resistance deviates from the thermally activated behavior decreases with cumulative surface damage. These features are more pronounced for the focused ion beam treated samples, with the difference likely being related to the absence of microscopic defects like subsurface cracks. Therefore, our method presents a systematic way of controlling the surface conductance.

cond-mat.mtrl-sci

Hyperfine Couplings as a Probe of Orbital Anisotropy in Heavy Fermion Materials

The transferred hyperfine interaction between nuclear and electron spins in an heavy fermion material depends on the hybridization between the $f$-electron orbitals and those surrounding a distant nucleus. In CeMIn$_5$ (M=Rh, Ir, Co), both the hyperfine coupling to the two indium sites as well as the crystalline electric field at the Ce are strongly dependent on the transition metal. We measure a series of CeRh$_{1-x}$Ir$_x$In$_5$ crystals and find that the hyperfine coupling reflects the orbital anisotropy of the ground state Ce 4$f$ wavefunction. These findings provide direct proof that the localized to itinerant transition is dominated by hybridization out of the Ce-In plane in this system.

cond-mat.str-el

Metallic islands in the Kondo insulator SmB$_{6}$

The predicted interplay between Kondo physics and non-trivial topology in SmB$_{6}$ has stimulated many experimental reports, some of which are in apparent contradiction. The origin of the dispute may lie on the fragility of the Kondo insulating phase in the presence of Sm vacancies (Kondo holes) and/or natural impurities, such as Gd$^{3+}$. In this work, we locally investigated this fragility for Al-flux grown Sm$_{1-x}$Gd$_{x}$B$_{6}$ single crystals (0 $\leq$ $x$ $\leq$ 0.02) by combining electron spin resonance (ESR) and complementary bulk measurements. The Gd$^{3+}$ ESR spectra in a highly dilute regime ($x$ $\sim 0.0004$) display the features of an insulating cubic environment. Remarkably, a metallic ESR lineshape is observed for more concentrated samples ($x$ $\geq$ 0.004), even though these systems are still in a reasonably dilute regime and show insulating $dc$ electrical resistivity. Our data indicate that the Kondo insulating state is destroyed locally around impurities before a global percolation occurs. This result not only explains the discrepancy between $dc$ and $ac$ conductivity, but also provides a scenario to explain the presence of quantum oscillations in magnetization in the absence of quantum oscillations in electrical resistivity.

cond-mat.str-el

Tuning the crystalline electric field and magnetic anisotropy along the CeCuBi$_{2-x}$Sb$_{x}$ series

We have performed X-ray powder diffraction, magnetization, electrical resistivity, heat capacity and inelastic neutron scattering (INS) to investigate the physical properties of the intermetallic series of compounds CeCuBi$_{2-x}$Sb$_{x}$. These compounds crystallize in a tetragonal structure with space group $P4/nmm$ and present antiferromagnetic transition temperatures ranging from 3.6 K to 16 K. Remarkably, the magnetization easy axis changes along the series, which is closely related to the variations of the tetragonal crystalline electric field (CEF) parameters. This evolution was analyzed using a mean field model, which included anisotropic nearest-neighbor interactions and the tetragonal CEF Hamiltonian. The CEF parameters were obtained by fitting the magnetic susceptibility data with the constraints given by the INS measurements. Finally, we discuss how this CEF evolution can affect the Kondo physics and the search for a superconducting state in this family.

cond-mat.str-el

Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$

We report the electronic and magnetic properties of stoichiometric CeAuBi$_{2}$ single crystals. At ambient pressure, CeAuBi$_{2}$ orders antiferromagnetically below a Néel temperature ($T_{N}$) of 19 K. Neutron diffraction experiments revealed an antiferromagnetic propagation vector $\hatτ = [0, 0, 1/2]$, which doubles the paramagnetic unit cell along the $c$-axis. At low temperatures several metamagnetic transitions are induced by the application of fields parallel to the $c$-axis, suggesting that the magnetic structure of CeAuBi$_{2}$ changes as a function of field. At low temperatures, a linear positive magnetoresistance may indicate the presence of band crossings near the Fermi level. Finally, the application of external pressure favors the antiferromagnetic state, indicating that the 4$f$ electrons become more localized.

cond-mat.str-el

Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator

Here we investigate antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$, a nonsymmorphic Zintl phase. Our electrical transport data show that Eu$_{5}$In$_{2}$Sb$_{6}$ is remarkably insulating and exhibits an exceptionally large negative magnetoresistance, which is consistent with the presence of magnetic polarons. From {\it ab initio} calculations, the paramagnetic state of Eu$_{5}$In$_{2}$Sb$_{6}$ is a topologically nontrivial semimetal within the generalized gradient approximation (GGA), whereas an insulating state with trivial topological indices is obtained using a modified Becke-Johnson potential. Notably, GGA+U calculations suggest that the antiferromagnetic phase of Eu$_{5}$In$_{2}$Sb$_{6}$ may host an axion insulating state. Our results provide important feedback for theories of topological classification and highlight the potential of realizing clean magnetic narrow-gap semiconductors in Zintl materials.

cond-mat.str-el

Revisiting the Possible 4f7 5d1 Ground State of Gd Impurities in SmB6 by Electron Spin Resonance

The search for topological states in strongly correlated electron systems has renewed the interest in the Kondo insulator SmB6. One of the most intriguing previous results was an anomalous electron spin resonance spectrum in Gd-doped SmB6. This spectrum was attributed to Gd2+ ions because it could be very well decribed by a model considering a change in the valence from Gd3+ to Gd2+, a dynamic Jahn-Teller effect and a 4f7 5d1 ground state in the Hamiltonian. In our work, we have revisited this scenario using electron spin resonance and energy dispersive X-ray spectroscopy measurements. Our results suggest that the resonance is produced by Gd2+ ions; however the resonance stems from an extrinsic oxide impurity phase that lies on the surface of the crystal.

cond-mat.str-el