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J. Caillaux

Publications and source records attributed to J. Caillaux.

3 recordsLinked to original sources

Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2

Time-resolved ARPES gives access to the band structure and ultrafast dynamics of excited electronic states in solids. The orbital character of the bands close to the Fermi level is essential to understand the origin of several exotic phenomena in quantum materials. By performing polarization dependent time- and angle-resolved photoemission spectroscopy and by analyzing the chirality of the photoelectron yield for two different crystal orientations, we identify the orbital character of bands below and above the chemical potential for the Dirac semimetal BaNiS2. Our results illustrate how the control and understanding of matrix elements effects in time-resolved photoemission spectroscopy can be a powerful tool for the study of quantum materials.

cond-mat.str-el

Tuning Dirac nodes with correlated d-electrons in BaCo_{1-x}Ni_{x}S_{2}

Dirac fermions play a central role in the study of topological phases, for they can generate a variety of exotic states, such as Weyl semimetals and topological insulators. The control and manipulation of Dirac fermions constitute a fundamental step towards the realization of novel concepts of electronic devices and quantum computation. By means of ARPES experiments and ab initio simulations, here we show that Dirac states can be effectively tuned by doping a transition metal sulfide, BaNiS2, through Co/Ni substitution. The symmetry and chemical characteristics of this material, combined with the modification of the charge transfer gap of BaCo_{1-x}Ni_{x}S_{2} across its phase diagram, lead to the formation of Dirac lines whose position in k-space can be displaced along the Gamma M symmetry direction, and their form reshaped. Not only does the doping x tailor the location and shape of the Dirac bands, but it also controls the metal-insulator transition in the same compound, making BaCo_{1-x}Ni_{x}S_{2} a model system to functionalize Dirac materials by varying the strength of electron correlations.

cond-mat.str-el

The essential role of surface pinning in the dynamics of charge density waves submitted to external dc fields

A Charge Density Wave (CDW) submitted to an electric field displays a strong shear deformation because of pinning at the lateral surfaces of the sample. This CDW transverse pinning was recently observed but has received little attention from a theoretical point of view until now despite important consequences on electrical conductivity properties. Here, we provide a description of this phenomenon by considering a CDW submitted to an external dc electric field and constrained by boundary conditions including both longitudinal pinning due to electrical contacts and transverse surface pinning. A simple formula for the CDW phase is obtained in 3D by using the Green function and image charges method. In addition, an analytical expression of the threshold field dependence on both length and sample cross section is obtained by considering the phase slip process. We show that the experimental data are well reproduced with this model and that bulk pinning can be neglected. This study shows that the dynamical properties of CDW systems could be mainly driven by boundary effects, despite the comparatively huge sample volumes.

cond-mat.str-el