arXiv subjects

J. Chiaverini

Publications and source records attributed to J. Chiaverini.

At least 19 recordsLinked to original sources

arXiv2024

Integrated photonic structures for photon-mediated entanglement of trapped ions

Trapped atomic ions are natural candidates for quantum information processing and have the potential to realize or improve quantum computing, sensing, and networking. These applications often require the collection of individual photons emitted from ions into guided optical modes, in some cases for the production of entanglement between separated ions. Proof-of-principle demonstrations of such photon collection from trapped ions have been performed using high-numerical-aperture lenses or cavities and single-mode fibers, but integrated photonic elements in ion-trap structures offer advantages in scalability and manufacturabilty over traditional optics. In this paper we analyze structures monolithically fabricated with an ion trap for collecting ion-emitted photons, coupling them into waveguides, and manipulating them via interference. We calculate geometric limitations on collection efficiency for this scheme, simulate a single-layer grating that shows performance comparable to demonstrated free-space optics, and discuss practical fabrication and fidelity considerations. Based on this analysis, we conclude that integrated photonics can support scalable systems of trapped-ions that can distribute quantum information via photon-mediated entanglement.

quant-ph↗

arXiv2023

Ablation loading of barium ions into a surface electrode trap

Trapped-ion quantum information processing may benefit from qubits encoded in isotopes that are practically available in only small quantities, e.g. due to low natural abundance or radioactivity. Laser ablation provides a method of controllably liberating neutral atoms or ions from low-volume targets, but energetic ablation products can be difficult to confine in the small ion-electrode distance, micron-scale, microfabricated traps amenable to high-speed, high-fidelity manipulation of ion arrays. Here we investigate ablation-based ion loading into surface-electrode traps of different sizes to test a model describing ion loading probability as a function of effective trap volume and other trap parameters. We demonstrate loading of ablated and photoionized barium in two cryogenic surface-electrode traps with 730 $μ$m and 50 $μ$m ion-electrode distances. Our loading success probability agrees with a predictive analytical model, providing insight for the confinement of limited-quantity species of interest for quantum computing, simulation, and sensing.

quant-ph↗

arXiv2021

$\textit{omg}$ Blueprint for trapped ion quantum computing with metastable states

Quantum computers, much like their classical counterparts, will likely benefit from flexible qubit encodings that can be matched to different tasks. For trapped ion quantum processors, a common way to access multiple encodings is to use multiple, co-trapped atomic species. Here, we outline an alternative approach that allows flexible encoding capabilities in single-species systems through the use of long-lived metastable states as an effective, programmable second species. We describe the set of additional trapped ion primitives needed to enable this protocol and show that they are compatible with large-scale systems that are already in operation.

quant-ph↗

arXiv2019

Dual-Species, Multi-Qubit Logic Primitives for Ca+/Sr+ Trapped-Ion Crystals

We demonstrate key multi-qubit quantum logic primitives in a dual-species trapped-ion system based on $^{40}$Ca+ and $^{88}$Sr+ ions, using two optical qubits with quantum-logic-control frequencies in the red to near-infrared range. With all ionization, cooling, and control wavelengths in a wavelength band similar for the two species and centered in the visible, and with a favorable mass ratio for sympathetic cooling, this pair is a promising candidate for scalable quantum information processing. Same-species and dual-species two-qubit gates, based on the Moelmer-Soerensen interaction and performed in a cryogenic surface-electrode trap, are characterized via the fidelity of generated entangled states; we achieve fidelities of 98.8(2)% and 97.5(2)% in Ca+ - Ca+ and Sr+ - Sr+ gates, respectively. For a similar Ca+ - Sr+ gate, we achieve a fidelity of 94.3(3)%, and carrying out a Sr+ - Sr+ gate performed with a Ca+ sympathetic cooling ion in a Sr+ - Ca+ - Sr+ crystal configuration, we achieve a fidelity of 95.7(3)%. These primitives form a set of trapped-ion capabilities for logic with sympathetic cooling and ancilla readout or state transfer for general quantum computing and communication applications.

quant-ph↗

arXiv2019

Evidence for multiple mechanisms underlying surface electric-field noise in ion traps

Electric-field noise from ion-trap electrode surfaces can limit the fidelity of multiqubit entangling operations in trapped-ion quantum information processors and can give rise to systematic errors in trapped-ion optical clocks. The underlying mechanism for this noise is unknown, but it has been shown that the noise amplitude can be reduced by energetic ion bombardment, or "ion milling," of the trap electrode surfaces. Using a single trapped $^{88}$Sr$^{+}$ ion as a sensor, we investigate the temperature dependence of this noise both before and after ex situ ion milling of the trap electrodes. Making measurements over a trap electrode temperature range of 4 K to 295 K in both sputtered niobium and electroplated gold traps, we see a marked change in the temperature scaling of the electric-field noise after ion milling: power-law behavior in untreated surfaces is transformed to Arrhenius behavior after treatment. The temperature scaling becomes material-dependent after treatment as well, strongly suggesting that different noise mechanisms are at work before and after ion milling. To constrain potential noise mechanisms, we measure the frequency dependence of the electric-field noise, as well as its dependence on ion-electrode distance, for niobium traps at room temperature both before and after ion milling. These scalings are unchanged by ion milling.

quant-ph↗

arXiv2018

Chip-integrated voltage sources for control of trapped ions

Trapped-ion quantum information processors offer many advantages for achieving high-fidelity operations on a large number of qubits, but current experiments require bulky external equipment for classical and quantum control of many ions. We demonstrate the cryogenic operation of an ion-trap that incorporates monolithically-integrated high-voltage CMOS electronics ($\pm 8\mathrm{V}$ full swing) to generate surface-electrode control potentials without the need for external, analog voltage sources. A serial bus programs an array of 16 digital-to-analog converters (DACs) within a single chip that apply voltages to segmented electrodes on the chip to control ion motion. Additionally, we present the incorporation of an integrated circuit that uses an analog switch to reduce voltage noise on trap electrodes due to the integrated amplifiers by over $50\mathrm{dB}$. We verify the function of our integrated electronics by performing diagnostics with trapped ions and find noise and speed performance similar to those we observe using external control elements.

quant-ph↗

arXiv2018

Method for Determination of Technical Noise Contributions to Ion Motional Heating

Microfabricated Paul ion traps show tremendous promise for large-scale quantum information processing. However, motional heating of ions can have a detrimental effect on the fidelity of quantum logic operations in miniaturized, scalable designs. In many experiments, contributions to ion heating due to technical voltage noise present on the static (DC) and radio frequency (RF) electrodes can be overlooked. We present a reliable method for determining the extent to which motional heating is dominated by residual voltage noise on the DC or RF electrodes. Also, we demonstrate that stray DC electric fields can shift the ion position such that technical noise on the RF electrode can significantly contribute to the motional heating rate. After minimizing the pseudopotential gradient experienced by the ion induced by stray DC electric fields, the motional heating due to RF technical noise can be significantly reduced.

quant-ph↗

arXiv2017

Distance scaling of electric-field noise in a surface-electrode ion trap

We investigate anomalous ion-motional heating, a limitation to multi-qubit quantum-logic gate fidelity in trapped-ion systems, as a function of ion-electrode separation. Using a multi-zone surface-electrode trap in which ions can be held at five discrete distances from the metal electrodes, we measure power-law dependencies of the electric-field noise experienced by the ion on the ion-electrode distance $d$. We find a scaling of approximately $d^{-4}$ regardless of whether the electrodes are at room temperature or cryogenic temperature, despite the fact that the heating rates are approximately two orders of magnitude smaller in the latter case. Through auxiliary measurements using application of noise to the electrodes, we rule out technical limitations to the measured heating rates and scalings. We also measure frequency scaling of the inherent electric-field noise close to $1/f$ at both temperatures. These measurements eliminate from consideration anomalous-heating models which do not have a $d^{-4}$ distance dependence, including several microscopic models of current interest.

quant-ph↗

arXiv2015

Scalable Loading of a Two-Dimensional Trapped-Ion Array

We describe rapid, random-access loading of a two-dimensional (2D) surface-electrode ion-trap array based on two crossed photo-ionization laser beams. With the use of a continuous flux of pre-cooled neutral atoms from a remotely-located source, we achieve loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive 2D arrays, as will be required for large-scale quantum information processing. Moreover, the already high loading rate can be increased by loading ions in parallel with only a concomitant increase in photo-ionization laser power and no need for additional atomic flux.

physics.atom-ph↗

arXiv2014

Measurement of Ion Motional Heating Rates over a Range of Trap Frequencies and Temperatures

We present measurements of the motional heating rate of a trapped ion at different trap frequencies and temperatures between $\sim$0.6 and 1.5 MHz and $\sim$4 and 295 K. Additionally, we examine the possible effect of adsorbed surface contaminants with boiling points below $\sim$105$^{\circ}$C by measuring the ion heating rate before and after locally baking our ion trap chip under ultrahigh vacuum conditions. We compare the heating rates presented here to those calculated from available electric-field noise models. We can tightly constrain a subset of these models based on their expected frequency and temperature scaling interdependence. Discrepancies between the measured results and predicted values point to the need for refinement of theoretical noise models in order to more fully understand the mechanisms behind motional trapped-ion heating.

physics.atom-ph↗

arXiv2014

Ion traps fabricated in a CMOS foundry

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

quant-ph↗

arXiv2013

Insensitivity of Ion Motional Heating Rate to Trap Material over a Large Temperature Range

We present measurements of trapped-ion motional-state heating rates in niobium and gold surface-electrode ion traps over a range of trap-electrode temperatures from approximately 4 K to room temperature (295 K) in a single apparatus. Using the sideband-ratio technique after resolved-sideband cooling of single ions to the motional ground state, we find low-temperature heating rates more than two orders of magnitude below the room-temperature values and approximately equal to the lowest measured heating rates in similarly-sized cryogenic traps. We find similar behavior in the two very different electrode materials, suggesting that the anomalous heating process is dominated by non-material-specific surface contaminants. Through precise control of the temperature of cryopumping surfaces, we also identify conditions under which elastic collisions with the background gas can lead to an apparent steady heating rate, despite rare collisions.

quant-ph↗

arXiv2008

Laserless trapped-ion quantum simulations without spontaneous scattering using microtrap arrays

We propose an architecture and methodology for large-scale quantum simulations using hyperfine states of trapped-ions in an arbitrary-layout microtrap array with laserless interactions. An ion is trapped at each site, and the electrode structure provides for the application of single and pairwise evolution operators using only locally created microwave and radio-frequency fields. The avoidance of short-lived atomic levels during evolution effectively eliminates errors due to spontaneous scattering; this may allow scaling of quantum simulators based on trapped ions to much larger systems than currently estimated. Such a configuration may also be particularly appropriate for one-way quantum computing with trapped-ion cluster states.

quant-ph↗

arXiv2007

Passive Cooling of a Micromechanical Oscillator with a Resonant Electric Circuit

We cool the fundamental mode of a miniature cantilever by capacitively coupling it to a driven rf resonant circuit. Cooling results from the rf capacitive force, which is phase shifted relative to the cantilever motion. We demonstrate the technique by cooling a 7 kHz cantilever from room temperature to 45 K, obtaining reasonable agreement with a model for the cooling, damping, and frequency shift. Extending the method to higher frequencies in a cryogenic system could enable ground state cooling and may prove simpler than related optical experiments in a low temperature apparatus.

cond-mat.other↗

arXiv2007

Errors in trapped-ion quantum gates due to spontaneous photon scattering

We analyze the error in trapped-ion, hyperfine qubit, quantum gates due to spontaneous scattering of photons from the gate laser beams. We investigate single-qubit rotations that are based on stimulated Raman transitions and two-qubit entangling phase-gates that are based on spin-dependent optical dipole forces. This error is compared between different ion species currently being investigated as possible quantum information carriers. For both gate types we show that with realistic laser powers the scattering error can be reduced to below current estimates of the fault-tolerance error threshold.

quant-ph↗

arXiv2006

Lower bounds for the fidelity of entangled state preparation

Estimating the fidelity of state preparation in multi-qubit systems is generally a time-consuming task. Nevertheless, this complexity can be reduced if the desired state can be characterized by certain symmetries measurable with the corresponding experimental setup. In this paper we give simple expressions to estimate the fidelity of multi-qubit state preparation for rotational-invariant, stabilizer, and generalized coherent states. We specifically discuss the cat, W-type, and generalized coherent states, and obtain efficiently measurable lower bounds for the fidelity. We use these techniques to estimate the fidelity of a quantum simulation of an Ising-like interacting model using two trapped ions. These results are directly applicable to experiments using fidelity-based entanglement witnesses, such as quantum simulations and quantum computation.

quant-ph↗

arXiv2006

Photoionization of strontium for trapped-ion quantum information processing

We report a demonstration of simple and effective loading of strontium ions into a linear radio frequency Paul trap using photoionization. The ionization pathway is 5s2 1S0 -- 5s5p 1P1 -- 5p2 1D2, and the 5p2 1D2 final state is auto-ionizing. Both transitions are driven using diode lasers: a grating-stabilized 922 nm diode doubled in a single pass through potassium niobate to 461 nm and a bare diode at 405 nm. Using this technique, we have reduced the background pressure during the ion loading process by a factor of 2 compared to the conventional technique of electron bombardment. Initial ion temperatures are low enough that the ions immediately form crystals. It is also possible to observe the trapping region with a CCD camera during ion creation, allowing specific ion number loading with high probability.

quant-ph↗

arXiv2006

A microfabricated surface-electrode ion trap in silicon

The prospect of building a quantum information processor underlies many recent advances ion trap fabrication techniques. Potentially, a quantum computer could be constructed from a large array of interconnected ion traps. We report on a micrometer-scale ion trap, fabricated from bulk silicon using micro-electromechanical systems (MEMS) techniques. The trap geometry is relatively simple in that the electrodes lie in a single plane beneath the ions. In such a trap we confine laser-cooled 24Mg+ ions approximately 40 microns above the surface. The fabrication technique and planar electrode geometry together make this approach amenable to scaling up to large trap arrays. In addition we observe that little laser cooling light is scattered by the electrodes.

quant-ph↗