arXiv subjects

J. Corrigan

Publications and source records attributed to J. Corrigan.

16 recordsLinked to original sources

arXiv2025

Fast high-fidelity baseband reset of a latched state for quantum dot qubit readout

A common method for reading out the state of a spin qubit is by latching one logical qubit state, either $|1\rangle$ or $|0\rangle$, onto a different, metastable charge state. Such a latched state can provide a superior charge sensing signal for qubit readout, and it can have a lifetime chosen to be long enough that the charge sensed readout can be high fidelity. However, the passive reset out of latched states is inherently long, which is not desirable. In this work, we demonstrate an on-demand, high fidelity (> 99%) re-initialization of a quantum dot qubit out of a latched readout state. The method is simple to apply as it involves a single baseband voltage pulse to a specific region in the quantum dot stability diagram where the relaxation time from the latched state to the ground state is over 50 times faster. We describe the mechanism for the reset process as well as the boundaries for the optimal reset region in the qubit gate voltage space.

cond-mat.mes-hall↗

arXiv2025

Operating two exchange-only qubits in parallel

Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology.

quant-ph↗

arXiv2024

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes.

cond-mat.mes-hall↗

arXiv2024

Single-shot latched readout of a quantum dot qubit using barrier gate pulsing

Latching techniques are widely used to enhance readout of qubits. These methods require precise tuning of multiple tunnel rates, which can be challenging to achieve under realistic experimental conditions, such as when a qubit is coupled to a single reservoir. Here, we present a method for single-shot measurement of a quantum dot qubit with a single reservoir using a latched-readout scheme. Our approach involves pulsing a barrier gate to dynamically control qubit-to-reservoir tunnel rates, a method that is readily applicable to the latched readout of various spin-based qubits. We use this method to enable qubit state latching and to reduce the qubit reset time in measurements of coherent Larmor oscillations of a Si/SiGe quantum dot hybrid qubit.

cond-mat.mes-hall↗

arXiv2024

Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling

We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics.

cond-mat.mes-hall↗

arXiv2024

Automation of Quantum Dot Measurement Analysis via Explainable Machine Learning

The rapid development of quantum dot (QD) devices for quantum computing has necessitated more efficient and automated methods for device characterization and tuning. This work demonstrates the feasibility and advantages of applying explainable machine learning techniques to the analysis of quantum dot measurements, paving the way for further advances in automated and transparent QD device tuning. Many of the measurements acquired during the tuning process come in the form of images that need to be properly analyzed to guide the subsequent tuning steps. By design, features present in such images capture certain behaviors or states of the measured QD devices. When considered carefully, such features can aid the control and calibration of QD devices. An important example of such images are so-called $\textit{triangle plots}$, which visually represent current flow and reveal characteristics important for QD device calibration. While image-based classification tools, such as convolutional neural networks (CNNs), can be used to verify whether a given measurement is $\textit{good}$ and thus warrants the initiation of the next phase of tuning, they do not provide any insights into how the device should be adjusted in the case of $\textit{bad}$ images. This is because CNNs sacrifice prediction and model intelligibility for high accuracy. To ameliorate this trade-off, a recent study introduced an image vectorization approach that relies on the Gabor wavelet transform (Schug $\textit{et al.}$ 2024 $\textit{Proc. XAI4Sci: Explainable Machine Learning for Sciences Workshop (AAAI 2024) (Vancouver, Canada)}$ pp 1-6). Here we propose an alternative vectorization method that involves mathematical modeling of synthetic triangles to mimic the experimental data. Using explainable boosting machines, we show that this new method offers superior explainability of model prediction without sacrificing accuracy.

cs.CV↗

arXiv2023

Probing single electrons across 300 mm spin qubit wafers

Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.

quant-ph↗

arXiv2022

Longitudinal coupling between a Si/SiGe quantum dot and an off-chip TiN resonator

Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled to a high-impedance resonator via a "flip-chip" design geometry. By applying an adiabatic ac drive to the qubit through two different channels, and studying the effects of qubit energy detuning, interdot tunneling, and driving strength, we are able to unequivocally confirm the presence of a longitudinal coupling between the qubit and cavity, while the qubit remains in its ground state. Since this coupling is proportional to the driving amplitude, and is therefore switchable, it has the potential to become a powerful new tool in qubit experiments.

quant-ph↗

arXiv2022

Latched readout for the quantum dot hybrid qubit

A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting.

cond-mat.mes-hall↗

arXiv2021

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications.

cond-mat.mes-hall↗

arXiv2021

How valley-orbit states in silicon quantum dots probe quantum well interfaces

The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.

cond-mat.mes-hall↗

arXiv2020

Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule

Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics.

cond-mat.mes-hall↗

arXiv2020

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $\pi$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed.

quant-ph↗

arXiv2019

Measurements of capacitive coupling within a quadruple quantum dot array

We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy.

quant-ph↗

arXiv2018

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits.

cond-mat.mes-hall↗

arXiv2017

Extending the coherence of a quantum dot hybrid qubit

Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.

cond-mat.mes-hall↗