arXiv subjects

J. Curiale

Publications and source records attributed to J. Curiale.

10 recordsLinked to original sources

arXiv2026

In-plane magnetic field control of anomalous Hall response enabled by magnetic anisotropy engineering

Engineering magnetic anisotropy provides a powerful route to control magnetization orientation and unlock emerging functionalities in opto-spintronic and current-driven devices. Beyond its role in magnetization reversal, the effective anisotropy can strongly influence the magnetotransport response, offering an additional degree of freedom to tune new device functionalities. In this work, we report a magnetotransport study of a ferrimagnetic [Tb/Co]$_{\times 5}$ multilayer grown with a Tb thickness gradient, whose wedge-shaped tilts the uniaxial anisotropy axis slightly away from the film normal. Anomalous Hall resistivity measurements from 80 K to 300 K reveal a spin reorientation transition, while the angular dependence of the magnetotransport responses exposes the crucial role of the tilted anisotropy. A simplified macrospin model reproduces the full angular response across the transition and shows that the observed anomalous Hall effect when the in-plane magnetic field is applied originates from the tilt of the uniaxial anisotropy axis, which supplies a built-in symmetry-breaking mechanism, enabling in-plane field control over the out-of-plane anomalous Hall response, sign included. These findings establish tilted magnetic anisotropy as a promising route toward Hall effect-based sensor applications and highlight Tb/Co multilayers as a versatile platform for anisotropy-engineered spintronic devices.

cond-mat.mes-hall↗

arXiv2025

Perpendicularly magnetized Tb/Co multilayers featuring tilted uniaxial anisotropy: Experiments and modeling

Rare earth/transition metal (RE/TM) multilayers with perpendicular magnetic anisotropy are key ingredients for the development of spintronic applications. Their compensation temperature depends on the ratio of the thicknesses of rare earth and transition metal, allowing their magnetic properties to be tuned with temperature while maintaining their anisotropy even in nanometer-scale devices. In this work, we performed a thorough structural characterization and systematically investigate the magnetic properties of a whole family of ferrimagnetic [Tb/Co]$_{\times 5}$ multilayers varying the Tb thickness in the range of 0.4 nm - 1.25 nm. A linear dependence of the compensation temperature on the Tb layer thickness was observed. Moreover, a uniaxial anisotropy constant of 330$\pm$30 kJ/m$^3$, which is close to the values reported by other authors, was estimated. Additionally, we proposed a model to gain a better understanding of the angular dependence of the magnetization loops and the linear dependence of the compensation temperature. We present strong evidence demonstrating that the perpendicular anisotropy must be tilted away from the perpendicular axis in order to explain the observed features, particularly the hysteresis in the in-plane loops. Our work advances the understanding of DC magnetic properties in thin RE/TM ferrimagnetic films, which has the potential to impact different fields where these materials are involved.

cond-mat.mtrl-sci↗

arXiv2024

Effect of Ir growth pressure on the domain wall dynamics in Ta/Pt/Co/Ir/Ta stacks

The dynamical response of magnetic domain walls to external magnetic fields in ultra-thin multilayer magnetic films is determined not only by the composition and thickness of the layers but also by the growth conditions. Growth conditions can induce significant structural changes inside the layers and at the interfaces between them, affecting in particular the dynamics of domain walls, their mobility, elastic tension, and the pinning forces acting on them. In this work, we focus specifically on the effect of Ir layer growth pressure in Ta/Pt/Co/Ir/Ta ultra-thin multilayers films. Measurements of the DC magnetic properties, domain wall velocity and domain morphology in the creep regime for both constant and alternating field pulses, were performed for a batch of samples where the Ir layer was grown at different pressures. We find that the saturation magnetization, the effective anisotropy constant and the domain wall surface tension grow with increasing pressure and saturate at a threshold pressure, while the Dzyaloshinskii-Moriya field and the strength of the disorder remain practically unaltered over the range of pressures considered.

cond-mat.dis-nn↗

arXiv2020

Impact of growth conditions on the domain nucleation and domain wall propagation in Pt/Co/Pt stacks

Understanding the effect of fabrication conditions on domain wall motion in thin films with perpendicular magnetization is a mandatory issue in order to tune their properties aiming to design spintronics devices based on such phenomenon. In this context, the present work intends to show how different growth conditions may affect domain wall motion in the prototypical system Pt/Co/Pt. The trilayers were deposited by dc sputtering, and the parameters varied in this study were the Co thickness, the substrate roughness, and the base pressure in the deposition chamber. Magneto-optical Kerr effect-based magnetometry and microscopy combined with X-ray reflectometry, atomic force microscopy, and transmission electron microscopy were adopted as experimental techniques. This permitted us to elucidate the impact on the hysteresis loops and on the domain wall dynamics, produced by different growth conditions. As other authors, we found that Co thickness is strongly determinant for both the coercive field and the domain wall velocity. On the contrary, the topographic roughness of the substrate and the base pressure of the deposition chamber evidence a selective impact on the nucleation of magnetic domains and on domain wall propagation, respectively, providing a tool to tune these properties.

cond-mat.mtrl-sci↗

arXiv2019

Common universal behaviors of magnetic domain walls driven by spin-polarized electrical current and magnetic field

We explore universal behaviors of magnetic domain wall driven by the spin-transfer of an electrical current, in a ferromagnetic (Ga,Mn)(As,P) thin film with perpendicular magnetic anisotropy. For a current direction transverse to domain wall, the dynamics of the thermally activated creep regime and the depinning transition are found to be compatible with a self-consistent universal description of magnetic field induced domain wall dynamics. This common universal behavior, characteristic of the so-called quenched Edwards-Wilkinson universality class, is confirmed by a complementary and independent analysis of domain wall roughness. However, the tilting of domain walls and the formation of facets is produced by the directionality of interaction with the current, which acts as a magnetic field only in the direction transverse to domain wall.

cond-mat.mtrl-sci↗

arXiv2008

Magnetic Behavior of Single La$_{0.67}$Ca$_{0.33}$MnO$_3$ Nanotubes: Surface and Shape Effects

We report magnetization experiments in two magnetically isolated ferromagnetic nanotubes of perovskite La$_{0.67}$Ca$_{0.33}$MnO$_3$. The results show that the magnetic anisotropy is determined by the sample shape although the coercive field is reduced by incoherent magnetization reversal modes. The temperature dependence of the magnetization reveals that the magnetic behavior is dominated by grain surface properties. These measurements were acquired using a Silicon micro-mechanical oscillator working in its resonant mode. The sensitivity was enough to measure the magnetic properties of these two samples with a mass lower than 14 picograms and to obtain for the first time the magnetization loop for one isolated nanotube.

cond-mat.mes-hall↗

arXiv2007

Probing phase coexistence and stabilization of the spin-ordered ferrimagnetic state by Calcium addition in the YBa_{1-x}Ca_{x}Co_{2}O_{5.5} layered cobaltites using neutron diffraction

In this article we study the effects of a partial substitution of Ba with the smaller cation Ca in the layered cobaltites YBaCo_2O_{5+δ} for δ\approx 0.5. Neutron thermodiffractograms are reported for the compounds YBa_{0.95}Ca_{0.05}Co_2O_{5.5} (x_{Ca}=0.05) and YBa_{0.90}Ca_{0.10}Co_2O_{5.5} (x_{Ca}=0.10) in the temperature range 20 K \leq T \leq 300 K, as well as high resolution neutron diffraction experiments at selected temperatures for the samples x_{Ca}=0.05, x_{Ca}=0.10 and the parent compound x_{Ca}=0. We have found the magnetic properties to be strongly affected by the cationic substitution. Although the "122" perovskite structure seems unaffected by Ca addition, the magnetic arrangements of Co ions are drastically modified: the antiferromagnetic (AFM) long-range order is destroyed, and a ferrimagnetic phase with spin state order is stabilized below T \sim 290 K. For the sample with x_{Ca}=0.05 a fraction of AFM phase coexists with the ferrimagnetic one below T \sim 190 K, whereas for x_{Ca}=0.10 the AFM order is completely lost. The systematic refinement of the whole series has allowed for a better understanding of the observed low-temperature diffraction patterns of the parent compound, YBaCo_2O_{5.5}, which had not yet been clarified. A two-phase scenario is proposed for the x_{Ca}=0 compound which is compatible with the phase coexistence observed in the x_{Ca}=0.05 sample.

cond-mat.str-el↗

arXiv2003

Low temperature irreversibility induced by thermal cycles on two prototypical phase separated manganites

We have studied the effect of irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La0.5Ca0.5MnO3 and La0.325Pr0.3Ca0.375MnO3. An increase of the resistivity and a decrease of the magnetization at different temperature ranges after cycling is obtained in the temperature range between 300 K and 30 K. Both compounds are known to exhibit intrinsic submicrometric coexistence of phases and undergo a sequence of phase transitions related to structural changes. Changes induced by thermal cycling can be partially inhibited by applying magnetic field and hydrostatic pressure. Our results suggest that the growth and coexistence of phases with different structures gives rise to microstructural tracks and strain accommodation, producing the observed irreversibility. Irrespective of the actual ground state of each compound, the effect of thermal cycling is towards an increase of the amount of the insulating phase in both compounds.

cond-mat.mtrl-sci↗

arXiv2002

Persistent magnetoresistive memory in phase separated manganites

We have studied magnetic and transport properties on different manganese oxide based compounds exhibiting phase separation: polycrystalline La5/8-yPryCa3/8MnO3 (y=0.3) and La1/2Ca1/2Mn1-zFezO3 (z = 0.05), and single crystals of La5/8-yPryCa3/8MnO3 (y=0.35). Time dependent effects indicate that the fractions of the coexisting phases are dynamically changing in a definite temperature range. We found that in this range the ferromagnetic fraction f can be easily tuned by application of low magnetic fields (< 1 T). The effect is persistent after the field is turned off, thus the field remains imprinted in the actual value of f and can be recovered through transport measurements. This effect is due both to the existence of a true phase separated equilibrium state with definite equilibrium fraction f0, and to the slow growth dynamics. The fact that the same global features were found on different compounds and in polycrystalline and single crystalline samples, suggests that the effect is a general feature of some phase separated media.

cond-mat.mtrl-sci↗

arXiv2002

Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$

We have measured magnetic and transport response on the polycrystalline La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ ($y=0.30$, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions coexist we observed a persistent memory of low magnetic fields ($<$ 1 T) which is determined by the actual amount of the ferromagnetic phase. The possibility to manipulate this fraction with relatively small external perturbations is related to the phase separated nature of these manganese oxide based compounds. The colossal magnetoresistance figures obtained (about 80%) are determined by the fraction enlargement mechanism. Self-shielding of the memory to external fields is found under certain described circumstances. We show that this non-volatile memory has multilevel capability associated with different applied low magnetic field values.

cond-mat.str-el↗