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J. D. LaVeigne

Publications and source records attributed to J. D. LaVeigne.

2 recordsLinked to original sources

Photoinduced time-resolved electrodynamics of superconducting metals and alloys

The photoexcited state in superconducting metals and alloys was studied via pump-probe spectroscopy. A pulsed Ti:sapphire laser was used to create the non-equilibrium state and the far-infrared pulses of a synchrotron storage ring, to which the laser is synchronized, measured the changes in the material optical properties. Both the time- and frequency- dependent photoinduced spectra of Pb, Nb, NbN, Nb{0.5}Ti{0.5}N, and Pb{0.75}Bi{0.25} superconducting thin films were measured in the low-fluence regime. The time dependent data establish the regions where the relaxation rate is dominated either by the phonon escape time (phonon bottleneck effect) or by the intrinsic quasiparticle recombination time. The photoinduced spectra measure directly the reduction of the superconducting gap due to an excess number of quasiparticles created by the short laser pulses. This gap shift allows us to establish the temperature range over which the low fluence approximation is valid.

cond-mat.supr-con↗

Sub-nanosecond, time-resolved, broadband infrared spectroscopy using synchrotron radiation

A facility for sub-nanosecond time-resolved (pump-probe) infrared spectroscopy has been developed at the National Synchrotron Light Source of Brookhaven National Laboratory. A mode-locked Ti:sapphire laser produces 2 ps duration, tunable near-IR pump pulses synchronized to probe pulses from a synchrotron storage ring. The facility is unique on account of the broadband infrared from the synchrotron, which allows the entire spectral range from 2 cm-1 (0.25 meV) to 20,000 cm-1 (2.5 eV) to be probed. A temporal resolution of 200 ps, limited by the infrared synchrotron-pulse duration, is achieved. A maximum time delay of 170 ns is available without gating the infrared detector. To illustrate the performance of the facility, a measurement of electron-hole recombination dynamics for an HgCdTe semiconductor film in the far- and mid infrared range is presented.

physics.ins-det↗