arXiv subjects

J. E. Medvedeva

Publications and source records attributed to J. E. Medvedeva.

17 recordsLinked to original sources

arXiv2012

Work hardening behavior in a steel with multiple TRIP mechanisms

Transformation induced plasticity (TRIP) behavior was studied in steel with composition Fe-0.07C-2.85Si-15.3Mn-2.4Al-0.017N that exhibited two TRIP mechanisms. The initial microstructure consisted of both ε- and α-martensites with 27% retained austenite. TRIP behavior in the first 5% strain was predominately austenite transforming to ε-martensite (Stage I), but upon saturation of Stage I, the ε-martensite transformed to α-martensite (Stage II). Alloy segregation also affected the TRIP behavior with alloy rich regions producing TRIP just prior to necking. This behavior was explained by first principle calculations that revealed aluminum significantly affected the stacking fault energy in Fe-Mn-Al-C steels by decreasing the unstable stacking fault energy and promoting easy nucleation of ε-martensite. The addition of aluminum also raised the intrinsic stacking fault energy and caused the ε-martensite to be unstable and transform to α-martensite under further deformation. The two stage TRIP behavior produced a high strain hardening exponent of 1.4 and led to ultimate tensile strength of 1165 MPa and elongation to failure of 35%.

cond-mat.mtrl-sci↗

arXiv2012

First-principles study of the Mn, Al and C distribution and their effect on the stacking fault energies in austenite

We present ab-initio simulation of manganese, aluminum and carbon impurities in austenite and demonstrate their inhomogeneous distribution, which involves the repulsion of interstitial carbon atoms, the formation of bonded Mn-C pairs as well as a short range Al-ordering of D03-type. The mechanisms for the formation of stacking faults in Fe-Mn-Al-C are considered, and we find that the impurities have influence on the stacking fault energies only when located within a few interatomic layers near stacking fault. As a result, the stacking fault energy does not depend on the average concentration of impurities in matrix, but is highly sensitive to the concentration of the impurities in the vicinity of stacking fault defect. We predict that manganese shows a slight tendency for segregation near SF, while carbon prefers to be located far from the stacking fault region. Both aluminum and carbon impurities linearly increase the SFE, while the formation of Mn-C pairs and short range Al-ordering restrain the SFE growth. Short range order in Fe-Al-C alloys strongly affects the energy barrier for nucleation of dislocations and may lead to softening phenomenon.

cond-mat.mtrl-sci↗

arXiv2011

Electronic properties of layered multicomponent wide-bandgap oxides: a combinatorial approach

The structural, electronic, and optical properties of twelve multicomponent oxides with layered structure, RAMO$_4$, where R$^{3+}$=In or Sc; A$^{3+}$=Al or Ga; and M$^{2+}$=Ca, Cd, Mg, or Zn, are investigated using first-principles density functional approach. The compositional complexity of RAMO$_4$ leads to a wide range of band gap values varying from 2.45 eV for InGaCdO$_4$ to 6.29 eV for ScAlMgO$_4$. Strikingly, despite the different band gaps in the oxide constituents, namely, 2-4 eV in CdO, In$_2$O$_3$, or ZnO; 5-6 for Ga$_2$O$_3$ or Sc$_2$O$_3$; and 7-9 eV in CaO, MgO, or Al$_2$O$_3$, the bottom of the conduction band in the multicomponent oxides is formed from the s-states of all cations and their neighboring oxygen p-states. We show that the hybrid nature of the conduction band in multicomponent oxides originates from the unusual five-fold atomic coordination of A$^{3+}$ and M$^{2+}$ cations which enables the interaction between the spatially-spread s-orbitals of adjacent cations via shared oxygen atoms. The effect of the local atomic coordination on the band gap, the electron effective mass, the orbital composition of the conduction band, and the expected (an)isotropic character of the electron transport in layered RAMO$_4$ is thoroughly discussed.

cond-mat.mtrl-sci↗

arXiv2009

First-principles investigation of uranium monochalcogenides

We present first-principles investigation of the electronic structure and magnetic properties of uranium monochalcogenides: US, USe, UTe. The calculations were performed by using recently developed LDA+U+SO method in which both Coulomb and spin-orbit interactions have been taken into account in rotationally invariant form. We discuss the problem of choice of the Coulomb interaction value. The calculated [111] easy axes agree with those experimentally observed. The electronic configuration 5$f^3$ was found for all uranium compounds under investigation.

cond-mat.str-el↗

arXiv2007

Electronic band structure and carrier effective mass in calcium aluminates

First-principles electronic band structure investigations of five compounds of the CaO-Al2O3 family, 3CaO.Al2O3, 12CaO.7Al2O3, CaO.Al2O3, CaO.2Al2O3 and CaO.6Al2O3, as well as CaO and alpha-, theta- and kappa-Al2O3 are performed. We find that the conduction band in the complex oxides is formed from the oxygen antibonding p-states and, although the band gap in Al2O3 is almost twice larger than in CaO, the s-states of both cations. Such a hybrid nature of the conduction band leads to isotropic electron effective masses which are nearly the same for all compounds investigated. This insensitivity of the effective mass to variations in the composition and structure suggests that upon a proper degenerate doping, both amorphous and crystalline phases of the materials will possess mobile extra electrons.

cond-mat.mtrl-sci↗

arXiv2007

Averaging of the electron effective mass in multicomponent transparent conducting oxides

We find that layered materials composed of various oxides of cations with $s^2$ electronic configuration, $XY_2$O$_4$, $X$=In or Sc, $Y$=Ga, Zn, Al, Cd and/or Mg, exhibit isotropic electron effective mass which can be obtained via averaging over those of the corresponding single-cation oxide constituents. This effect is due to a hybrid nature of the conduction band formed from the s-states of {\it all} cations and the oxygen p-states. Moreover, the observed insensitivity of the electron effective mass to the oxygen coordination and to the distortions in the cation-oxygen chains suggests that similar behavior can be expected in technologically important amorphous state. These findings significantly broaden the range of materials as efficient transparent conductor hosts.

cond-mat.mtrl-sci↗

arXiv2007

Unconventional approaches to combine optical transparency with electrical conductivity

Combination of electrical conductivity and optical transparency in the same material -- known to be a prerogative of only a few oxides of post-transition metals, such as In, Sn, Zn and Cd -- manifests itself in a distinctive band structure of the transparent conductor host. While the oxides of other elements with $s^2$ electronic configuration, for example, Mg, Ca, Sc and Al, also exhibit the desired optical and electronic features, they have not been considered as candidates for achieving good electrical conductivity because of the challenges of efficient carrier generation in these wide-bandgap materials. Here we demonstrate that alternative approaches to the problem not only allow attaining the transport and optical properties which compete with those in currently utilized transparent conducting oxides (TCO), but also significantly broaden the range of materials with a potential of being developed into novel functional transparent conductors.

cond-mat.mtrl-sci↗

arXiv2006

Magnetically Mediated Transparent Conductors: In$_2$O$_3$ doped with Mo

First-principles band structure investigations of the electronic, optical and magnetic properties of Mo-doped In$_2$O$_3$ reveal the vital role of magnetic interactions in determining both the electrical conductivity and the Burstein-Moss shift which governs optical absorption. We demonstrate the advantages of the transition metal doping which results in smaller effective mass, larger fundamental band gap and better overall optical transmission in the visible -- as compared to commercial Sn-doped In$_2$O$_3$. Similar behavior is expected upon doping with other transition metals opening up an avenue for the family of efficient transparent conductors mediated by magnetic interactions.

cond-mat.mtrl-sci↗

arXiv2004

Tunable Conductivity and Conduction Mechanism in a UV light activated electronic conductor

A tunable conductivity has been achieved by controllable substitution of a novel UV light activated electronic conductor. The transparent conducting oxide system H-doped Ca12-xMgxAl14O33 (x = 0; 0.1; 0.3; 0.5; 0.8; 1.0) presents a conductivity that is strongly dependent on the substitution level and temperature. Four-point dc-conductivity decreases with x from 0.26 S/cm (x = 0) to 0.106 S/cm (x = 1) at room temperature. At each composition the conductivity increases (reversibly with temperature) until a decomposition temperature is reached; above this value, the conductivity drops dramatically due to hydrogen recombination and loss. The observed conductivity behavior is consistent with the predictions of our first principles density functional calculations for the Mg-substituted system with x=0, 1 and 2. The Seebeck coefficient is essentially composition- and temperature-independent, the later suggesting the existence of an activated mobility associated with small polaron conduction. The optical gap measured remains constant near 2.6 eV while transparency increases with the substitution level, concomitant with a decrease in carrier content.

cond-mat.mtrl-sci↗

arXiv2004

Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width can be controlled by adjusting the Al concentration in the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers.

cond-mat.mtrl-sci↗

arXiv2004

Electronic structure properties and BCS superconductivity in beta-pyrochlore oxides: KOs_2O_6

We report a first-principles density-functional calculation of the electronic structure and properties of the recently discovered superconducting beta-pyrochlore oxide KOs_2O_6. We find that the electronic structure near the Fermi energy E_F is dominated by strongly hybridized Os-5d and O-2p states. A van Hove singularity very close to E_F leads to a relatively large density of states at E_F, and the Fermi surface exhibits strong nesting along several directions. These features could provide the scattering processes leading to the observed anomalous temperature dependence of the resistivity and to the rather large specific heat mass enhancement we obtain from the calculated density of states and the observed specific heat coefficient. An estimate of T_c within the framework of the BCS theory of superconductivity taking into account the possible effects of spin fluctuations arising from nesting yields the experimental value.

cond-mat.supr-con↗

arXiv2004

Combining high conductivity with complete optical transparency: A band-structure approach

A comparison of the structural, optical and electronic properties of the recently discovered transparent conducting oxide (TCO), nanoporous Ca12Al14O33, with those of the conventional TCO's (such as Sc-doped CdO) indicates that this material belongs conceptually to a new class of transparent conductors. For this class of materials, we formulate criteria for the successful combination of high electrical conductivity with complete transparency in the visible range. Our analysis suggests that this set of requirements can be met for a group of novel materials called electrides.

cond-mat.mtrl-sci↗

arXiv2004

Hopping versus bulk conductivity in transparent oxides: 12CaO.7Al2O3

First-principles calculations of the mayenite-based oxide, [Ca12Al14O32]{2+}(2e-), reveal the mechanism responsible for its high conductivity. A detailed comparison of the electronic and optical properties of this material with those of the recently discovered novel transparent conducting oxide, H-doped UV-activated Ca12Al14O33, allowed us to conclude that the enhanced conductivity in [Ca12Al14O32]{2+}(2e-) is achieved by elimination of the Coulomb blocade of the charge carriers. This results in a transition from variable range hopping behavior with a Coulomb gap in H-doped UV-irradiated Ca12Al14O33 to bulk conductivity in [Ca12Al14O32]{2+}(2e-). Further, the high degree of the delocalization of the conduction electrons obtained in [Ca12Al14O32]{2+}(2e-) indicate that it cannot be classified as an electride, originally suggested.

cond-mat.mtrl-sci↗

arXiv2004

Electronic structure and light-induced conductivity in a transparent refractory oxide

Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by specific doping.

cond-mat.mtrl-sci↗

arXiv2002

Orbital Ordering in Paramagnetic LaMnO3 and KCuF3

{\it Ab-initio} studies of the stability of orbital ordering, its coupling to magnetic structure and its possible origins (electron-phonon and/or electron-electron interactions) are reported for two perovskite systems, LaMnO$_3$ and KCuF$_3$. We present a new Average Spin State (ASS) calculational scheme that allowed us to treat a paramagnetic state. Using this scheme, we succesfully described the experimental magnetic/orbital phase diagram of both LaMnO$_3$ and KCuF$_3$ in crystal structures when the Jahn-Teller distortions are neglected. Hence, we conclude that the orbital ordering in both compounds is purely electronic in origin.

cond-mat.str-el↗

arXiv2001

Electric field gradients in s-, p- and d-metal diborides and the effect of pressure on the band structure and T$_c$ in MgB$_2$

Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized gradient approximation) calculations of the band structure and boron electric field gradients (EFG) for the new medium-T$_c$ superconductor (MTSC), MgB$_2$, and related diborides MB$_2$, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported. The boron EFG variations are found to be related to specific features of their band structure and particularly to the M-B hybridization. The strong charge anisotropy at the B site in MgB$_2$ is completely defined by the valence electrons - a property which sets MgB$_2$ apart from other diborides. The boron EFG in MgB$_2$ is weakly dependent of applied pressure: the B p electron anisotropy increases with pressure, but it is partly compensated by the increase of core charge assymetry. The concentration of holes in bonding $σ$ bands is found to decrease slightly from 0.067 to 0.062 holes/B under a pressure of 10 GPa. Despite a small decrease of N(E$_F$), the Hopfield parameter increases with pressure and we believe that the main reason for the reduction under pressure of the superconducting transition temperature, T$_c$, is the strong pressure dependence of phonon frequencies, which is sufficient to compensate the electronic effects.

cond-mat.supr-con↗

arXiv2001

Electronic structure of superconducting MgB2 and related binary and ternary borides

First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band holes at the $Γ$ point. Based on these calculations, we explain the absence of medium-$T_C$ superconductivity for $BeB_2$, $AlB_2$ $ScB_2$ and $YB_2$. The simulation of a number of $MgB_2$-based ternary systems using a supercell approach demonstrates that (i) the electron doping of $MgB_2$ (i.e., $MgB_{2-y}X_y$ with X=Be, C, N, O) and the creation of isoelectronic defects in the boron sublattice (nonstoichiometric $MgB_{y<2}$) are not favorable for superconductivity, and (ii) a possible way of searching for similar MTSC should be via hole doping of $MgB_2$ (i.e., $Mg_{1-x}M_xB_2$ with M=Be, Ca, Li, Na, Cu, Zn) or $CaB_2$ or via creating layered superstructures of the $MgB_2/CaB_2$ type. A recent report of superconductivity in Cu doped $MgB_2$ supports this view.

cond-mat.supr-con↗