arXiv subjects

J. Eroms

Publications and source records attributed to J. Eroms.

27 records · Page 2Linked to original sources

arXiv2010

Photon helicity driven electric currents in graphene

We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed.

cond-mat.mes-hall↗

arXiv2009

Weak Localization and Transport Gap in Graphene Antidot Lattices

We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity.

cond-mat.mes-hall↗

arXiv2008

Quantum transport in ferromagnetic Permalloy nanostructures

We studied phase coherent phenomena in mesoscopic Permalloy samples by exploring low temperature transport. Both, differential conductance as a function of bias voltage and magnetoconductance of individual wires display conductance fluctuations. Analysis of these fluctuations yields a phase coherence length of $\sim250$ nm at 25 mK as well as a $1/\sqrt{T}$ temperature dependence. To suppress conductance fluctuations by ensemble averaging we investigated low temperature transport in wire arrays and extended Permalloy films. In these samples we have measured conductance corrections which stem from electron-electron interaction (EEI) but attempts to detect signatures of weak localization were without success.

cond-mat.mes-hall↗

arXiv2008

Morphology and flexibility of graphene and few-layer graphene on various substrates

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions.

cond-mat.mtrl-sci↗

arXiv2006

Low-frequency Noise in Josephson Junctions for Superconducting Qubits

We have studied low-frequency resistance fluctuations in shadow-evaporated Al/AlOx/Al tunnel junctions. Between 300 K and 5 K the spectral density follows a 1/f-law. Below 5 K, individual defects distort the 1/f-shape of the spectrum. The spectral density decreases linearly with temperature between 150 K and 1 K and saturates below 0.8 K. At 4.2 K, the spectral density is about two orders of magnitude lower than expected from a recent survey [D. J. Van Harlingen et al., Phys. Rev. B 70, 064510 (2004)]. Due to the saturation below 0.8 K the estimated qubit dephasing times at 100 mK are only about two times longer than calculated by Van Harlingen et al.

cond-mat.supr-con↗

arXiv2005

Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states

We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes.

cond-mat.mes-hall↗

arXiv2003

Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling.

cond-mat↗

arXiv2001

Commensurability effects in Andreev antidot billiards

An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering the trajectories of charge carriers in the semiconductor, when Andreev reflection at the semiconductor-superconductor interface is included. For perfect Andreev reflection, we expect a complete suppression of the commensurability features, even though motion at finite B is chaotic.

cond-mat.mes-hall↗

arXiv1998

Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare surface of section at different magnetic field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum.

cond-mat.mes-hall↗