arXiv subjects

J. F. DiTusa

Publications and source records attributed to J. F. DiTusa.

41 records · Page 3Linked to original sources

arXiv2001

Holes in a Quantum Spin Liquid

Magnetic neutron scattering provides evidence for nucleation of antiferromagnetic droplets around impurities in a doped nickel-oxide based quantum magnet. The undoped parent compound contains a spin liquid with a cooperative singlet ground state and a gap in the magnetic excitation spectrum. Calcium doping creates excitations below the gap with an incommensurate structure factor. We show that weakly interacting antiferromagnetic droplets with a central phase shift of $π$ and a size controlled by the correlation length of the quantum liquid can account for the data. The experiment provides a first quantitative impression of the magnetic polarization cloud associated with holes in a doped transition metal oxide.

cond-mat.dis-nn↗

arXiv2000

Coulomb Gap: How a Metal Film Becomes an Insulator

Electron tunneling measurements of the density of states (DOS) in ultra-thin Be films reveal that a correlation gap mediates their insulating behavior. In films with sheet resistance $R<5000Ω$ the correlation singularity appears as the usual perturbative $ln(V)$ zero bias anomaly (ZBA) in the DOS. As R is increased further, however, the ZBA grows and begins to dominate the DOS spectrum. This evolution continues until a non-perturbative $|V|$ Efros-Shklovskii Coulomb gap spectrum finally emerges in the highest R films. Transport measurements of films which display this gap are well described by a universal variable range hopping law $R(T)=(h/2e^2)exp(T_o/T)^{1/2}$.

cond-mat.str-el↗

arXiv2000

Magnetoresistance From Quantum Interference Effects in Ferromagnets

The desire to maximize the sensitivity of read/write heads and thus the information density of magnetic storage devices has produced an intense interest in the magnetoresistance (MR) of magnetic materials. Recent discoveries include "colossal" MR of the manganites1-4 and the enhanced MR of low carrier density ferromagnets4-6. In the low carrier density systems investigated to date as well as the manganites, a key feature is that the electrical conduction is due to a different set of electrons than the localized electrons responsible for the magnetism. Here we propose a mechanism for ferromagnetic MR originating from quantum interference effects, rather than simple scattering. The new mechanism obtains in disordered low carrier density magnets where the magnetism as well as the electrical conduction are due to the same electrons. Here the MR is positive and only weakly temperature dependent below the Curie point. This is very different from the MR seen when conduction electrons and local moments can be treated separately, in which case the MR is negative and strongly peaked at the Curie point.

cond-mat.str-el↗

arXiv2000

Tenfold Magnetoconductance in a Non-Magnetic Metal Film

We present magnetoconductance (MC) measurements of homogeneously disordered Be films whose zero field sheet conductance (G) is described by the Efros-Shklovskii hopping law $G(T)=(2e^2/h)\exp{-(T_o/T)^{1/2}}$. The low field MC of the films is negative with G decreasing 200% below 1 T. In contrast the MC above 1 T is strongly positive. At 8 T, G increases 1000% in perpendicular field and 500% in parallel field. In the simpler parallel case, we observe {\em field enhanced} variable range hopping characterized by an attenuation of $T_o$ via the Zeeman interaction.

cond-mat.str-el↗

arXiv1997

Is a doped 'Kondo' insulator different from doped Silicon?

We have observed the metal-insulator transition in the strongly correlated insulator FeSi with the chemical substitution of Al at the Si site. The magnetic susceptibility, heat capacity, and field dependent conductivity are measured for Al concentrations ranging from 0 to 0.08. For concentrations greater than 0.01 we find metallic properties quantitatively similar to those measured in Si:P with the exception of a greatly enhanced quasiparticle mass. Below 2 K the temperature and field dependent conductivity can be completely described by the theory of disordered Fermi Liquids.

cond-mat.str-el↗