arXiv subjects

J. Fernández-Rossier

Publications and source records attributed to J. Fernández-Rossier.

99 records · Page 6Linked to original sources

arXiv2005

Single exciton spectroscopy of semimagnetic quantum dots

A photo-excited II-VI semiconductor nanocrystal doped with a few Mn spins is considered. The effects of spin-exciton interactions and the resulting multi-spin correlations on the photoluminescence are calculated by numerical diagonalization of the Hamiltonian, including exchange interaction between electrons, holes and Mn spins, as well as spin-orbit interaction. The results provide a unified description of recent experiments of photoluminesnce of dots with one and many Mn atoms as well as optically induced ferromagnetism in semimagnetic nanocrystals.

cond-mat.mes-hall↗

arXiv2005

Magnetic and orbital blocking in Ni nanocontacts

We address the fundamental question of whether magneto-resistance (MR) of atomic-sized contacts of Nickel is very large because of the formation of a domain wall (DW) at the neck. Using {\em ab initio} transport calculations we find that, as in the case of non-magnetic electrodes, transport in Ni nanocontacts depends very much on the orbital nature of the electrons. Our results are in agreement with several experiments in the average value of the conductance. On the other hand, contrary to existing claims, DW scattering does {\em not} account for large MR in Ni nanocontacts.

cond-mat.mtrl-sci↗

arXiv2004

Tunnel Magneto-resistance in GaMnAs: going beyond Jullière formula

The relation between tunnel magneto-resistance (TMR) and spin polarization is explored for GaMnAs/GaAlAs/GaMnAs structures where the carriers experience strong spin-orbit interactions. TMR is calculated using Landauer approach. The materials are described in the 6 band $\bf {k}\cdot \bf{p}$ model which includes spin orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of of spin polarization and barrier thickness. As a result of the stong spin orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula.

cond-mat.mtrl-sci↗

arXiv2004

Single-photon exchange interaction in a semiconductor microcavity

We consider the effective coupling of localized spins in a semiconductor quantum dot embedded in a microcavity. The lowest cavity mode and the quantum dot exciton are coupled and close in energy, forming a polariton. The fermions forming the exciton interact with localized spins via exchange. Exact diagonalization of a Hamiltonian in which photons, spins and excitons are treated quantum mechanically shows that {\it a single polariton} induces a sizable indirect exchange interaction between otherwise independent spins. The origin, symmetry properties and the intensity of that interaction depend both on the dot-cavity coupling and detuning. In the case of a (Cd,Mn)Te quantum dot, Mn-Mn ferromagnetic coupling mediated by a single photon survives above 1 K whereas the exciton mediated coupling survives at 15 K.

cond-mat.mes-hall↗

arXiv2004

Optical spin transfer in ferromagnetic semiconductors

Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a photocarrier in a (III,V) semiconductors is determined by the polarization state of the laser. We show that the photocarrier spin can be irreversibly transferred to the collective magnetization, whose dynamics can consequently be flexibly controlled by suitably chosen laser pulses. As illustrations we demonstrate the feasibility of all optical ferromagnetic resonance and optical magnetization reorientation.

cond-mat.mes-hall↗

arXiv2004

Ferromagnetism mediated by few electrons in a semimagnetic quantum dot

A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single conduction band electron is able to induce a spontaneous collective magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions. The carrier mediated ferromagnetism in the dot survives at temperatures above 1 Kelvin, two orders of magnitude larger than the Curie temperature for the same material in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of injected electrons.

cond-mat.mes-hall↗

arXiv2003

Coherently photo-induced ferromagnetism in diluted magnetic semiconductors

Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-bandgap laser radiation . The mechanism for photo-induced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T_C depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1 K.

cond-mat.mes-hall↗

arXiv2002

Spin separation in digital ferromagnetic heterostructures

In a study of the ferromagnetic phase of a multilayer digital ferromagnetic semiconductor in the mean-field and effective-mass approximations, we find the exchange interaction to have the dominant energy scale of the problem, effectively controlling the spatial distribution of the carrier spins in the digital ferromagnetic heterostructures. In the ferromagnetic phase, the majority and minority carriers tend to be in different regions of the space (spin separation). Hence, the charge distribution of carriers also changes noticeably from the ferromagnetic to the paramagnetic phase. An example of a design to exploit these phenomena is given.

cond-mat.mes-hall↗

arXiv1995

Polarized interacting exciton gas in quantum wells and bulk semiconductors

We develop a theory to calculate exciton binding energies of both two- and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton luminescence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at high exciton density $(5 \ \ 10^{10} cm ^2)$. Energy level splitting betwen spin +1 and spin -1 is shown to be due to many-body inter-excitonic exchange while the spin relaxation time is controlled by intra-exciton exchange.

cond-mat↗