arXiv subjects

J. Fuhrmann

Publications and source records attributed to J. Fuhrmann.

2 recordsLinked to original sources

arXiv2026

High yield creation of germanium vacancy centers in diamond by focused ion beam implantation and high temperature annealing

Negatively charged germanium vacancy centers (GeV) in diamond are a promising platform for quantum computing and quantum communication. However, these applications require the precise incorporation of GeV centers with good optical properties inside of nanophotonic structures. In this work, we demonstrate the highly efficient local creation of GeV centers in diamond via focused-ion-beam implantation, followed by high-temperature annealing. We report the successful creation of GeV centers over the depth range of 5.5 - 30 nm. Implantation at low fluence enables the creation of single GeV centers. The formation yield strongly depends on implantation energy and fluence, reaching up to 33% at energies of 35 and 70 keV. This method, therefore, enables the efficient creation of GeV centers within a small, well-defined local sample volume and offers a potential means of incorporating them into photonic structures.

quant-ph↗

arXiv2026

Phonon-assisted charge-cycling of nitrogen-vacancy centres in diamond

The nitrogen-vacancy (NV) centre in diamond is a leading platform for room-temperature quantum sensing. Improvements in sensitivity require precise control of the NV charge state. Transitions from the neutral NV$^0$ charge state to the negative NV$^-$ charge state can occur during excitation with photon energies below the ZPL transition of NV$^0$. These sub-resonant charge transitions limit modern initialisation protocols and have not been studied in full detail. In this paper we show that sub-resonant charge cycling arises from phonon-assisted anti-Stokes excitation. We further uncover the phonon states which contribute most strongly to the anti-Stokes transition via the development of novel quantitative models. The models indicate that low energy acoustic phonons strongly contribute to the transition close to the ZPL. At longer wavelengths a 43\,meV mode additionally impacts the charge cycling dynamics.

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