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J. Güttinger

Publications and source records attributed to J. Güttinger.

10 recordsLinked to original sources
arXiv2018

High quality factor graphene-based 2D heterostructure mechanical resonator

Ultralight mechanical resonators based on low-dimensional materials are well suited as exceptional transducers of minuscule forces or mass changes. However, the low dimensionality also provides a challenge to minimize resistive losses and heating. Here, we report on a novel approach that aims to combine different 2D materials to tackle this challenge. We fabricated a heterostructure mechanical resonator consisting of few layers of niobium diselenide (NbSe$_2$) encapsulated by two graphene sheets. The hybrid membrane shows high quality factors up to 245'000 at low temperatures, comparable to the best few-layer graphene mechanical resonators. In contrast to few-layer graphene resonators, the device shows reduced electrical losses attributed to the lower resistivity of the NbSe$_2$ layer. The peculiar low temperature dependence of the intrinsic quality factor points to dissipation over two-level systems which in turn relax over the electronic system. Our high sensitivity readout is enabled by coupling the membrane to a superconducting cavity which allows for the integration of the hybrid mechanical resonator as a sensitive and low loss transducer in future quantum circuits.

cond-mat.mes-hall↗
arXiv2014

Coupling graphene mechanical resonators to superconducting microwave cavities

Graphene is an attractive material for nanomechanical devices because it allows for exceptional properties, such as high frequencies and quality factors, and low mass. An outstanding challenge, however, has been to obtain large coupling between the motion and external systems for efficient readout and manipulation. Here, we report on a novel approach, in which we capacitively couple a high-Q graphene mechanical resonator ($Q \sim 10^5$) to a superconducting microwave cavity. The initial devices exhibit a large single-photon coupling of $\sim 10$ Hz. Remarkably, we can electrostatically change the graphene equilibrium position and thereby tune the single photon coupling, the mechanical resonance frequency and the sign and magnitude of the observed Duffing nonlinearity. The strong tunability opens up new possibilities, such as the tuning of the optomechanical coupling strength on a time scale faster than the inverse of the cavity linewidth. With realistic improvements, it should be possible to enter the regime of quantum optomechanics.

cond-mat.mes-hall↗
arXiv2012

High-frequency gate manipulation of a bilayer graphene quantum dot

We report transport data obtained for a double-gated bilayer graphene quantum dot. In Coulomb blockade measurements, the gate dielectric Cytop(TM) is found to provide remarkable electronic stability even at cryogenic temperatures. Moreover, we demonstrate gate manipulation with square shaped voltage pulses at frequencies up to 100 MHz and show that the signal amplitude is not affected by the presence of the capacitively coupled back gate.

cond-mat.mes-hall↗
arXiv2011

Coherent Electron-Phonon Coupling in Tailored Quantum Systems

The coupling between a two-level system and its environment leads to decoherence. Within the context of coherent manipulation of electronic or quasiparticle states in nanostructures, it is crucial to understand the sources of decoherence. Here, we study the effect of electron-phonon coupling in a graphene and an InAs nanowire double quantum dot. Our measurements reveal oscillations of the double quantum dot current periodic in energy detuning between the two levels. These periodic peaks are more pronounced in the nanowire than in graphene, and disappear when the temperature is increased. We attribute the oscillations to an interference effect between two alternative inelastic decay paths involving acoustic phonons present in these materials. This interpretation predicts the oscillations to wash out when temperature is increased, as observed experimentally.

cond-mat.mes-hall↗
arXiv2010

Transition to Landau Levels in Graphene Quantum Dots

We investigate the electronic eigenstates of graphene quantum dots of realistic size (i.e., up to 80 nm diameter) in the presence of a perpendicular magnetic field B. Numerical tight-binding calculations and Coulomb-blockade measurements performed near the Dirac point exhibit the transition from the linear density of states at B=0 to the Landau level regime at high fields. Details of this transition sensitively depend on the underlying graphene lattice structure, bulk defects, and localization effects at the edges. Key to the understanding of the parametric evolution of the levels is the strength of the chiral-symmetry breaking K-K' scattering. We show that the parametric variation of the level variance provides a quantitative measure for this scattering mechanism. We perform measurements of the parametric motion of Coulomb blockade peaks as a function of magnetic field and find good agreement. We thereby demonstrate that the magnetic-field dependence of graphene energy levels may serve as a sensitive indicator for the properties of graphene quantum dots and, in further consequence, for the validity of the Dirac-picture.

cond-mat.mes-hall↗
arXiv2010

Imaging Localized States in Graphene Nanostructures

Probing techniques with spatial resolution have the potential to lead to a better understanding of the microscopic physical processes and to novel routes for manipulating nanostructures. We present scanning-gate images of a graphene quantum dot which is coupled to source and drain via two constrictions. We image and locate conductance resonances of the quantum dot in the Coulomb-blockade regime as well as resonances of localized states in the constrictions in real space.

cond-mat.mes-hall↗
arXiv2010

Observation of excited states in a graphene double quantum dot

We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.

cond-mat.mes-hall↗
arXiv2009

Transport through graphene double dots

We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.

cond-mat.mes-hall↗
arXiv2007

Local gating of a graphene Hall bar by graphene side gates

We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances.

cond-mat.mes-hall↗