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J. Gabelli

Publications and source records attributed to J. Gabelli.

8 recordsLinked to original sources
arXiv2022

Role of optical rectification in photon-assisted tunneling current

We study the optical rectification in a metallic tunnel junction. We consider a planar junction in a Kretschmann configuration and measure the photon-assisted tunneling under infrared illumination at $\lambda= 1.5\, \mu \mathrm{m}$. To address the microscopic mechanism at the origin of the optical rectification, we compare the photon assisted current and the current-voltage characteristics of the junction measured on a voltage range much greater than $V_0=\frac{hc}{e\lambda}=0.825 \, \mathrm{V}$. The experimental results do not agree with the Tucker theory based on the exchange of energy quanta between electrons and photons and describing the dc current induced by photon-assisted processes in terms of a linear combination of the shifted characteristics $I(V)$ and $I(V\pm V_0)$. We show instead that the illumination power mainly goes into heating and that the rectification results mainly from the non-linearity of the tunnel junction at optical frequency.

cond-mat.mes-hall↗
arXiv2019

Sample-based calibration for cryogenic broadband microwave reflectometry measurements

The characteristic frequencies of a system provide important information on the phenomena that govern its physical properties. In this framework, there has recently been renewed interest in cryogenic microwave characterization for condensed matter systems since it allows to probe energy scales of the order of a few $μ$eV. However, broadband measurements of the absolute value of a sample response in this frequency range are extremely sensitive to its environment and require a careful calibration. In this paper, we present an \textit{in situ} calibration method for cryogenic broadband microwave reflectometry experiments that is both simple to implement and through which the effect of the sample electromagnetic environment can be minimized. The calibration references are here provided by the sample itself, at three reference temperatures where its impedance is assumed or measured, and not by external standards as is usual. We compare the frequency-dependent complex impedance (0.1--2 GHz) of an a-Nb$_{15}$Si$_{85}$ superconducting thin film obtained through this Sample-Based Calibration (SBC) and through an Open-Short-Load Standard Calibration (SC) when working at very low temperature (0.02--4 K) and show that the SBC allows us to obtain the absolute response of the sample. This method brings the calibration planes as close as possible to the sample, so that the environment electrodynamic response does not affect the measurement, provided it is temperature independent. This results in a heightened sensitivity, for a given experimental set--up.

cond-mat.supr-con↗
arXiv2013

Cryogenic Calibration Setup for Broadband Complex Impedance Measurements

Reflection measurements give access to the complex impedance of a material on a wide frequency range. This is of interest to study the dynamical properties of various materials, for instance disordered superconductors. However reflection measurements made at cryogenic temperature suffer from the difficulty to reliably subtract the circuit contribution. Here we report on the design and first tests of a setup able to precisely calibrate in situ the sample reflection, at 4.2 K and up to 2 GHz, by switching and measuring, during the same cool down, the sample and three calibration standards.

physics.ins-det↗
arXiv2010

Comment on "Experimental Determination of the Statistics of Photons Emitted by a Tunnel Junction"

A very recent article [(1) E. Zakka-Bajjani et al., PRL104, 206802 (2010)] has addressed the problem of how the statistics of electrons crossing a quantum conductor influences that of the photons they emit. It is however not clear that the detection used in [1] is sensitive to emitted photons and not to the overall electromagnetic fluctuations, which include vacuum fluctuations. We show that the proof in [1] that non-symmetrized noise is detected is erroneous: supposing that the detection simply takes the square of the voltage, i.e. is sensitive to vacuum fluctuations, leads to identical results. We demonstrate that all the results can be explained in terms of usual gaussian voltage fluctuations instead of photon statistics. Finally, it is found in [1] that the photon noise is gaussian for a tunnel junction, for which the electron counting statistics is poissonian. We show that this result is beyond the experimental sensitivity by at least one order of magnitude, and thus is also incorrect.

cond-mat.mes-hall↗
arXiv2009

Full Counting Statistics of Avalanche Transport: an Experiment

We report the first measurement of high order cumulants of the current fluctuations in an avalanche diode run through by a stationary dc current. Such a system is archetypic of devices in which transport is governed by a collective mechanism, here charge multiplication by avalanche. We have measured the first 5 cumulants of the probability distribution of the current fluctuations. We show that the charge multiplication factor is distributed according to a power law that is different from that of the usual avalanche below breakdown, when avalanches are well separated.

cond-mat.stat-mech↗
arXiv2008

High Frequency Dynamics and Third Cumulant of Quantum Noise

The existence of the third cumulant $S_{3}$ of voltage fluctuations has demonstrated the non-Gaussian aspect of shot noise in electronic transport. Until now, measurements have been performed at low frequency, \textit{i.e.} in the classical regime $\hbar ω< eV, k_BT$ where voltage fluctuations arise from charge transfer process. We report here the first measurement of $S_3$ at high frequency, in the quantum regime $\hbar ω> eV, k_BT$. In this regime, experiment cannot be seen as a charge counting statistics problem anymore. It raises central questions of the statistics of quantum noise: 1) the electromagnetic environment of the sample has been proven to strongly influence the measurement, through the possible modulation of the noise of the sample. What happens to this mechanism in the quantum regime? 2) For $\hbar ω> eV$, the noise is due to zero point fluctuations and keeps its equilibrium value: $S_2= G \hbar ω$ with $G$ the conductance of the sample. Therefore, $S_2$ is independent of the bias voltage and no photon is emitted by the conductor. Is it possible, as suggested by some theories, that $S_3 \neq 0$ in this regime? With regard to these questions, we give theoretical and experimental answers to the environmental effects showing that they involve dynamics of the quantum noise. Using these results, we investigate the question of the third cumulant of quantum noise in the a tunnel junction.

cond-mat.mes-hall↗
arXiv2007

Dynamics of Quantum Noise in a Tunnel Junction under ac Excitation

We report the first measurement of the \emph{dynamical response} of shot noise (measured at frequency $ω$) of a tunnel junction to an ac excitation at frequency $ω_0$. The experiment is performed in the quantum regime, $\hbarω\sim\hbarω_0\gg k_BT$ at very low temperature T=35mK and high frequency $ω_0/2π=6.2$ GHz. We observe that the noise responds in phase with the excitation, but not adiabatically. The results are in very good agreement with a prediction based on a new current-current correlator.

cond-mat.mes-hall↗