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J. H. Dil

Publications and source records attributed to J. H. Dil.

44 records · Page 3Linked to original sources

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

We report a Rashba spin splitting of a two-dimensional electron gas in the topological insulator Bi$_2$Se$_3$ from angle-resolved photoemission spectroscopy. We further demonstrate its electrostatic control, and show that spin splittings can be achieved which are at least an order-of-magnitude larger than in other semiconductors. Together these results show promise for the miniaturization of spintronic devices to the nanoscale and their operation at room temperature.

cond-mat.mtrl-sci↗

Direct observation of spin-polarized surface states in the parent compound of topological insulator Bi-Sb using spin-resolved-ARPES in a 3D Mott-polarimetry spin mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a $k$-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of first bulk (3D) topological insulator - topological order in bulk solids. [Invited article for NJP-IOP Focus issue on "Topological Insulators"]

cond-mat.mes-hall↗

Realization of an isolated Dirac node and strongly modulated Spin Texture in the topological insulator Bi2Te3

The development of spin-based applications of topological insulators requires the knowledge and understanding of spin texture configuration maps as they change via gating in the vicinity of an isolated Dirac node. An isolated (graphene-like) Dirac node, however, does not exist in Bi2Te3. While the isolation of surface states via transport channels has been promisingly achieved in Bi2Te3, it is not known how spin textures modulate while gating the surface. Another drawback of Bi2Te3 is that it features multiple band crossings while chemical potential is placed near the Dirac node (at least 3 not one as in Bi2Se3 and many other topological insulators) and its buried Dirac point is not experimentally accessible for the next generation of experiments which require tuning the chemical potential near an isolated (graphene-like) Dirac node. Here, we image the spin texture of Bi2Te3 and suggest a simple modification to realize a much sought out isolated Dirac node regime critical for almost all potential applications (of topological nature) of Bi2Te3. Finally, we demonstrate carrier control in magnetically and nonmagnetically doped Bi2Te3 essential for realizing giant magneto-optical effects and dissipationless spin current devices involving a Bi2Te3-based platform.

cond-mat.mes-hall↗

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009) http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html]. Here we report the first observation of Spin-Momentum Helical Locking and Spin-Vortex structures in Bi2Se3 and Bi2Te3, demonstrate the existence of Topological-Order at 300K and report a material realization of topological-transport-regime for helical Dirac fermions. Our results reveal a one-to-one spin-momentum locked Dirac structure in Bi2Se3 and Bi2Te3 that is nearly 100% spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological-transport-regime. The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K). Our results pave the way for future transport based studies of topological insulators, and possible room temperature applications of protected spin-polarized edge channels we observe with spin-ARPES in spintronic technology. All of these new results are made possible due to the Spin-resolved-ARPES (Mott polarimetric) technique [http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html ] .

cond-mat.mes-hall↗

Observation of topologically protected Dirac spin-textures and πBerry's phase in pure Antimony (Sb) and topological insulator BiSb

A topologically ordered material is characterized by a rare quantum organization of electrons that evades the conventional spontaneously broken symmetry based classification of condensed matter. Exotic spin transport phenomena such as the dissipationless quantum spin Hall effect have been speculated to originate from a novel topological order whose identification requires a spin sensitive measurement. Using Spin-resolved-ARPES, we probe the spin degrees of freedom and demonstrate that topological quantum numbers are uniquely determined from spin-texture Berry Phase imaging measurements. Applying this method to pure antimony (Sb) and Bi-Sb, we identify the origin of its novel Topological Order and the negative value of the mirror Chern number. These results taken together constitute the first observation of surface electrons collectively carrying a topological Berry's phase and definite mirror Chern chirality in pure Antimony (Sb) which are the key electronic properties for realizing topological quantum computing via the interface Majorana fermion framework. This paper contains the details of the above mentioned previously reported (Science \textbf{323}, 919 (2009)) results.

cond-mat.mes-hall↗

Time-reversal-protected single-Dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3: Topologically Spin-polarized Dirac fermions with pi Berry's Phase

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 (first non-Bi topological insulator) and their derivatives belong to the Z2 (Time-Reversal-Protected, elastic backscattering suppressed) topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (about 150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of surface spin-only Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for exploring novel topological physics. We emphasize (theoretically and experimentally) that the Dirac node is well within the bulk-gap and not degenerate with the bulk valence band.

cond-mat.mes-hall↗

First observation of spin-helical Dirac fermions and topological phases in undoped and doped Bi2Te3 demonstrated by spin-ARPES spectroscopy

Electron systems that possess light-like dispersion relations or the conical Dirac spectrum, such as graphene and bismuth, have recently been shown to harbor unusual collective states in high magnetic fields. Such states are possible because their light-like electrons come in spin pairs that are chiral,which means that their direction of propagation is tied to a quantity called pseudospin that describes their location in the crystal lattice. An emerging direction in quantum materials research is the manipulation of atomic spin-orbit coupling to simulate the effect of a spin dependent magnetic field,in attempt to realize novel spin phases of matter. This effect has been proposed to realize systems consisting of unpaired Dirac cones that are helical, meaning their direction of propagation is tied to the electron spin itself, which are forbidden to exist in graphene or bismuth. The experimental existence of topological order can not be determined without spin-resolved measurements. Here we report a spin-and angle-resolved photoemission study of the hexagonal surface of the Bi2Te3 and Bi{2-x}MnxTe3 series, which is found to exhibit a single helical Dirac cone that is fully spin-polarized. Our observations of a gap in the bulk spin-degenerate band and a spin-resolved surface Dirac node close to the chemical potential show that the low energy dynamics of Bi2Te3 is dominated by the unpaired spin-helical Dirac modes. Our spin-texture measurements prove the existence of a rare topological phase in this materials class for the first time, and suggest its suitability for novel 2D Dirac spin device applications beyond the chiral variety or traditional graphene.

cond-mat.mes-hall↗

First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase

A topologically ordered material is characterized by a rare quantum organization of electrons that evades the conventional spontaneously broken symmetry based classification of condensed matter. Exotic spin transport phenomena such as the dissipationless quantum spin Hall effect have been speculated to originate from a novel topological order whose identification requires a spin sensitive measurement, which does not exist to this date in any system (neither in Hg(Cd)Te quantum wells nor in the topological insulator BiSb). Using Mott polarimetry, we probe the spin degrees of freedom of these quantum spin Hall states and demonstrate that topological quantum numbers are uniquely determined from spin texture imaging measurements. Applying this method to the Bi{1-x}Sb{x} series, we identify the origin of its novel order and unusual chiral properties. These results taken together constitute the first observation of surface electrons collectively carrying a geometrical quantum (Berry's) phase and definite chirality (mirror Chern number, n_M =-1), which are the key electronic properties for realizing topological computing bits with intrinsic spin Hall-like topological phenomena. Our spin-resolved results not only provides the first clear proof of a topological insulating state in nature but also demonstrate the utility of spin-resolved ARPES technique in measuring the quantum spin Hall phases of matter.

cond-mat.mes-hall↗