SearcharxivSearch

arXiv subjects

J. Herfort

Publications and source records attributed to J. Herfort.

4 recordsLinked to original sources

Large-area synthesis of ferromagnetic Fe$_{5-x}$GeTe$_{2}$/graphene van der Waals heterostructures with Curie temperature above room temperature

Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devices with integrated magnetic, electronic and optical functionalities. Their implementation in various technologies depends strongly on the development of a bottom-up scalable synthesis approach allowing to realize highly uniform heterostructures with well-defined interfaces between different 2D layered materials. It also requires that each material component of the heterostructure remains functional, which ideally includes ferromagnetic order above room temperature for 2D ferromagnets. Here, we demonstrate large-area growth of Fe$_{5-x}$GeTe$_{2}$/graphene heterostructures achieved by vdW epitaxy of Fe$_{5-x}$GeTe$_{2}$ on epitaxial graphene. Structural characterization confirmed the realization of a continuous vdW heterostructure film with a sharp interface between Fe$_{5-x}$GeTe$_{2}$ and graphene. Magnetic and transport studies revealed that the ferromagnetic order persists well above 300 K with a perpendicular magnetic anisotropy. In addition, epitaxial graphene on SiC(0001) continues to exhibit a high electronic quality. These results represent an important advance beyond non-scalable flake exfoliation and stacking methods, thus marking a crucial step toward the implementation of ferromagnetic 2D materials in practical applications.

cond-mat.mtrl-sci

Large non-reciprocal propagation of surface acoustic waves in epitaxial ferromagnetic/semiconductor hybrid structures

Non-reciprocal propagation of sound, that is, the different transmission of acoustic waves traveling along opposite directions, is a challenging requirement for the realization of devices like acoustic isolators and circulators. Here, we demonstrate the efficient non-reciprocal transmission of surface acoustic waves (SAWs) propagating along opposite directions of a GaAs substrate coated with an epitaxial Fe$_3$Si film. The non-reciprocity arises from the acoustic attenuation induced by the magneto-elastic (ME) interaction between the SAW strain field and spin waves in the ferromagnetic film, which depends on the SAW propagation direction and can be controlled via the amplitude and orientation of an external magnetic field. The acoustic transmission non-reciprocity, defined as the difference between the transmitted acoustic power for forward and backward propagation under ME resonance, reaches values of up to 20%, which are, to our knowledge, the largest non-reciprocity reported for SAWs traveling along a semiconducting piezoelectric substrate covered by a ferromagnetic film. The experimental results are well accounted for by a model for ME interaction, which also shows that non-reciprocity can be further enhanced by optimization of the sample design. These results make Fe$_3$Si/GaAs a promising platform for the realization of efficient non-reciprocal SAW devices.

physics.app-ph

Ab initio and nuclear inelastic scattering studies of Fe$_3$Si/GaAs heterostructures

The structure and dynamical properties of the Fe$_3$Si/GaAs(001) interface are investigated by density functional theory and nuclear inelastic scattering measurements. The stability of four different atomic configurations of the Fe$_3$Si/GaAs multilayers is analyzed by calculating the formation energies and phonon dispersion curves. The differences in charge density, magnetization, and electronic density of states between the configurations are examined. Our calculations unveil that magnetic moments of the Fe atoms tend to align in a plane parallel to the interface, along the [110] direction of the Fe$_3$Si crystallographic unit cell. In some configurations, the spin polarization of interface layers is larger than that of bulk Fe$_3$Si. The effect of the interface on element-specific and layer-resolved phonon density of states is discussed. The Fe-partial phonon density of states measured for the Fe$_3$Si layer thickness of three monolayers is compared with theoretical results obtained for each interface atomic configuration. The best agreement is found for one of the configurations with a mixed Fe-Si interface layer, which reproduces the anomalous enhancement of the phonon density of states below 10 meV

cond-mat.mtrl-sci

Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells

Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.

cond-mat.mtrl-sci