J. Hood | Searcharxiv

arXiv2023

Measurement of Dielectric Loss in Silicon Nitride at Centimeter and Millimeter Wavelengths

This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from $\sim$1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave resonator at different temperatures to a model that captures the two-level system (TLS) response to extract and characterize both the real and imaginary components of the dielectric loss. The inverse of the internal quality factor is a second measure of the overall loss of the resonator, where TLS loss through the dielectric material is typically the dominant source. The third technique is a differential optical measurement at 150 GHz. The same antenna feeds two microstrip lines with different lengths that terminate in two microwave kinetic inductance detectors (MKIDs). The difference in the detector response is used to estimate the loss per unit length of the microstrip line. Our results suggest a larger loss for SiN$_x$ at 150 GHz of ${\mathrm{\tan \delta\sim 4\times10^{-3}}}$ compared to ${\mathrm{2.0\times10^{-3}}}$ and ${\mathrm{\gtrsim 1\times10^{-3}}}$ measured at $\sim$1 GHz using the other two methods. {These measurement techniques can be applied to other dielectrics by adjusting the microstrip lengths to provide enough optical efficiency contrast and other mm/sub-mm frequency ranges by tuning the antenna and feedhorn accordingly.

astro-ph.IM↗

arXiv2022

Testing low-loss microstrip materials with MKIDs for microwave applications

Future measurements of the millimeter-wavelength sky require a low-loss superconducting microstrip, typically made from niobium and silicon-nitride, coupling the antenna to detectors. We propose a simple device for characterizing these low-loss microstrips at 150 GHz. In our device we illuminate an antenna with a thermal source and compare the measured power at 150 GHz transmitted down microstrips of different lengths. The power measurement is made using Microwave Kinetic Inductance Detectors (MKIDs) fabricated directly onto the microstrip dielectric, and comparing the measured response provides a direct measurement of the microstrip loss. Our proposed structure provides a simple device (4 layers and a DRIE etch) for characterizing the dielectric loss of various microstrip materials and substrates. We present initial results using these devices. We demonstrate that the millimeter wavelength loss of microstrip lines, a few tens of millimeters long, can be measured using a practical aluminum MKID with a black body source at a few tens of Kelvin.

astro-ph.IM↗