arXiv subjects

J. I. Dadap

Publications and source records attributed to J. I. Dadap.

4 recordsLinked to original sources

arXiv2025

Enhanced coherence and layer-selective charge order in a trilayer cuprate superconductor

Trilayer cuprates hold the record for the highest superconducting critical temperatures ($T_{\text{c}}$), yet the underlying mechanism remains elusive. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES), we uncover a striking interplay between charge order, superconducting gap magnitude, and quasiparticle coherence in Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ (Bi2223). This constitutes ARPES-based evidence of charge order on the inner CuO$_2$ plane, as confirmed via resonant x-ray scattering (RXS); in addition, the same inner plane hosts a superconducting gap significantly larger than that of the overdoped outer planes, firmly establishing it as underdoped. Unexpectedly, despite its underdoped nature, the inner plane also exhibits an exceptional degree of quasiparticle coherence; suppressing charge-order fluctuations further enhances this, making it comparable to that of the overdoped outer planes at elevated electronic temperatures. These findings, supported by complementary three-layer single-band Hubbard calculations, reveal a unique interlayer mechanism in which both pairing strength and phase coherence are optimized when interfacing planes with distinct hole concentrations, providing new microscopic insight into the record $T_{\text{c}}$ of Bi2223.

cond-mat.str-el↗

arXiv2016

Engineering the structural and electronic phases of MoTe2 through W substitution

MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe$_2$ through W substitution by unveiling the phase-diagram of the Mo$_{1-x}$W$_x$Te$_2$ solid solution which displays a semiconducting to semimetallic transition as a function of $x$. We find that only $\sim 8$ \% of W stabilizes the $T_d-$phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe$_2$.

cond-mat.mes-hall↗

arXiv2011

Trapping Surface Electrons on Graphene Layers and Islands

We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.

cond-mat.mes-hall↗

arXiv1998

DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces

The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures.

physics.optics↗