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J. J. Hamlin

Publications and source records attributed to J. J. Hamlin.

At least 37 records · Page 2Linked to original sources

Functional Form of the Superconducting Critical Temperature from Machine Learning

Predicting the critical temperature $T_c$ of new superconductors is a notoriously difficult task, even for electron-phonon paired superconductors for which the theory is relatively well understood. Early attempts by McMillan and Allen and Dynes to improve on the weak-coupling BCS formula led to closed-form approximate relations between $T_c$ and various measures of the phonon spectrum and the electron-phonon interaction appearing in Eliashberg theory. Here we propose that these approaches can be improved with the use of machine learning algorithms. As an initial test, we train a model for identifying low-dimensional descriptors using the $T_c < 10$ K data tested by Allen and Dynes, and show that a simple analytical expression thus obtained improves upon the Allen-Dynes fit. Furthermore, the prediction for the recently discovered high $T_c$ material H$_3$S at high pressure is quite reasonable. Interestingly, $T_c$'s for more recently discovered superconducting systems with a more two-dimensional electron-phonon coupling, which do not follow Allen and Dynes' expression, also do not follow our analytic expression. Thus, this machine learning approach appears to be a powerful method for highlighting the need for a new descriptor beyond those used by Allen and Dynes to describe their set of isotropic electron-phonon coupled superconductors. We argue that this machine learning method, and its implied need for a descriptor characterizing Fermi surface properties, represents a promising new approach to superconductor materials discovery which may eventually replace the serendipitous discovery paradigm begun by Kamerlingh Onnes.

cond-mat.supr-con↗

Possible pressure-induced topological quantum phase transition in the nodal line semimetal ZrSiS

ZrSiS has recently gained attention due to its unusual electronic properties: nearly perfect electron-hole compensation, large, anisotropic magneto-resistance, multiple Dirac nodes near the Fermi level, and an extremely large range of linear dispersion of up to 2 eV. We have carried out a series of high pressure electrical resistivity measurements on single crystals of ZrSiS. Shubnikov-de Haas measurements show two distinct oscillation frequencies. For the smaller orbit, we observe a change in the phase of 0.5, which occurs between 0.16 - 0.5 GPa. This change in phase is accompanied by an abrupt decrease of the cross-sectional area of this Fermi surface. We attribute this change in phase to a possible topological quantum phase transition. The phase of the larger orbit exhibits a Berry phase of pi and remains roughly constant up to 2.3 GPa. Resistivity measurements to higher pressures show no evidence for pressure-induced superconductivity to at least 20 GPa.

cond-mat.str-el↗

Unusual Effects of Be doping in the Iron Based Superconductor FeSe

Recent superconducting transition temperatures (Tc) over 100 K for monolayer FeSe on SrTiO3 have renewed interest in the bulk parent compound. In KCl:AlCl3 flux-transport-grown crystals of FeSe0.94Be0.06, FeSe0.97Be0.03 and, for comparison, FeSe, this work reports doping of FeSe using Be, among the smallest of possible dopants, corresponding to an effective chemical pressure. According to lattice parameter measurements, 6% Be doping shrank the tetragonal FeSe lattice equivalent to a physical pressure of 0.75 GPa. Using this flux-transport method of sample preparation, 6% of Be was the maximum amount of dopant achievable. At this maximal composition of FeSe0.94Be0.06, the lattice unit cell shrinks by 2.4%, Tc - measured in the bulk via specific heat - increases by almost 10%, the Tc vs pressure behavior shifts its peak Tconset downwards by ~1 GPa, the high temperature structural transition around TS = 89 K increases by 1.9 K (in contrast to other dopants in FeSe which uniformly depress TS), and the low temperature specific heat gamma increases by 10 % compared to pure FeSe. Also, upon doping by 6% Be the residual resistivity ratio, rho(300K)/rho(T->0), increases by almost a factor of four, while rho(300K)/rho(T=Tc+) increases by 50%.

cond-mat.supr-con↗

Superconductivity of barium-VI synthesized via compression at low temperatures

Using a membrane-driven diamond anvil cell and both ac magnetic susceptibility and electrical resistivity measurements, we have characterized the superconducting phase diagram of elemental barium to pressures as high as 65 GPa. We have determined the superconducting properties of the recently discovered Ba-VI crystal structure, which can only be accessed via the application of pressure at low temperature. We find that Ba-VI exhibits a maximum Tc near 8 K, which is substantially higher than the maximum Tc found when pressure is applied at room temperature.

cond-mat.supr-con↗

Evolution of the Fermi surface of BiTeCl with pressure

We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeCl under applied pressures up to ~2.5 GPa. We observe two distinct oscillation frequencies, corresponding to the Rashba-split inner and outer Fermi surfaces. BiTeCl has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling, resulting in two spin-polarized conduction bands as well as a Dirac point. Our results suggest that the chemical potential lies above this Dirac point, giving rise to two Fermi surfaces. We use a simple two-band model to understand the pressure dependence of our sample parameters. Comparing our results on BiTeCl to previous results on BiTeI, we observe similar trends in both the chemical potential and the Rashba splitting with pressure.

cond-mat.mtrl-sci↗

Pressure-induced superconductivity in the giant Rashba system BiTeI

At ambient pressure, BiTeI is the first material found to exhibit a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements on BiTeI at pressure up to ~40 GPa in an effort to characterize the properties of the high-pressure phases. A previous calculation found that the high-pressure orthorhombic P4/nmm structure BiTeI is a metal. We find that this structure is superconducting with Tc values as high as 6 K. AC magnetic susceptibility measurements support the bulk nature of the superconductivity. Using electronic structure and phonon calculations, we compute Tc and find that our data is consistent with phonon-mediated superconductivity.

cond-mat.supr-con↗

Pressure dependence of the charge-density-wave and superconducting states in GdTe$_3$, TbTe$_3$ and DyTe$_3$

We present electrical resistivity and ac-susceptibility measurements of GdTe$_3$, TbTe$_3$ and DyTe$_3$ performed under pressure. An upper charge-density-wave (CDW) is suppressed at a rate of $\mathrm{d}T_{\mathrm{CDW,1}}/\mathrm{d}P$ = $-$85 K/GPa. For TbTe$_3$ and DyTe$_3$, a second CDW below $T_{\mathrm{CDW,2}}$ increases with pressure until it reaches the $T_{\mathrm{CDW,1}}$($P$) line. For GdTe$_3$, the lower CDW emerges as pressure is increased above $\sim$ 1 GPa. As these two CDW states are suppressed with pressure, superconductivity (SC) appears in the three compounds at lower temperatures. Ac-susceptibility experiments performed on TbTe$_3$ provide compelling evidence for bulk SC in the low-pressure region of the phase diagram. We provide measurements of superconducting critical fields and discuss the origin of a high-pressure superconducting phase occurring above 5 GPa.

cond-mat.supr-con↗

Tuning the Fermi level through the Dirac point of giant Rashba semiconductor BiTeI with pressure

We report measurements of Shubnikov-de Haas oscillations in the giant Rashba semiconductor BiTeI under applied pressures up to $\sim 2\,\mathrm{GPa}$. We observe one high frequency oscillation at all pressures and one low frequency oscillation that emerges between $\sim 0.3-0.7\,\mathrm{GPa}$ indicating the appearance of a second small Fermi surface. BiTeI has a conduction band bottom that is split into two sub-bands due to the strong Rashba coupling, resulting in a `Dirac point'. Our results suggest that the chemical potential starts below the Dirac point in the conduction band at ambient pressure and moves upward, crossing it as pressure is increased. The presence of the chemical potential above this Dirac point results in two Fermi surfaces. We present a simple model that captures this effect and can be used to understand the pressure dependence of our sample parameters. These extracted parameters are in quantitative agreement with first-principles calculations and other experiments. The parameters extracted via our model support the notion that pressure brings the system closer to the predicted topological quantum phase transition.

cond-mat.mtrl-sci↗

Persistent non-metallic behavior in Sr2IrO4 and Sr3Ir2O7 at high pressures

Iridium-based 5d transition-metal oxides are attractive candidates for the study of correlated electronic states due to the interplay of enhanced crystal-field, Coulomb and spin-orbit interaction energies. At ambient pressure, these conditions promote a novel Jeff = 1/2 Mott insulating state, characterized by a gap of the order of ~0.1 eV. We present high-pressure electrical resistivity measurements of single crystals of Sr2IrO4 and Sr3Ir2O7. While no indications of a pressure-induced metallic state up to 55 GPa were found in Sr2IrO4, a strong decrease of the gap energy and of the resistance of Sr3Ir2O7 between ambient pressure and 104 GPa confirm that this compound is in the proximity of a metal-insulator transition.

cond-mat.str-el↗

Probing the superconductivity of PrPt4Ge12 through Ce substitution

We report measurements of electrical resistivity, magnetic susceptibility, specific heat, and thermoelectric power on the system Pr1-xCexPt4Ge12. Superconductivity is suppressed with increasing Ce concentration up to x = 0.5, above which there is no evidence for superconductivity down to 1.1 K. The Sommerfeld coefficient γ increases with increasing x from 48 mJ/mol K^2 up to 120 mJ/mol K^2 at x = 0.5, indicating an increase in strength of electronic correlations. The temperature dependence of the specific heat at low temperatures evolves from roughly T^3 for x = 0 to e^(-Δ/T) behavior for x = 0.05 and above, suggesting a crossover from a nodal to a nodeless superconducting energy gap or a transition from multiband to single-band superconductivity. Fermi-liquid behavior is observed throughout the series in low-temperature magnetization, specific heat, and electrical resistivity measurements.

cond-mat.str-el↗

Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions

The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO4 as a narrow-gap semiconductor.

cond-mat.mtrl-sci↗

Magneto-Transport Properties of Single Crystalline LaFeAsO

Measurements of magnetization, specific heat, electrical resistivity, Hall effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in a NaAs flux are reported. While this material is known to be a semimetal, the temperature dependence of the electrical resistivity data presented herein is reminiscent of semiconducting behavior and exhibits distinct features associated with a structural transition and spin density wave (SDW) order. Magnetoresistance and Hall coefficient measurements were performed in magnetic fields up to 9 T applied perpendicular to the basal plane using a van der Pauw configuration. The charge carrier density and mobility indicate that electrons are the majority charge carriers and exhibit features indicative of the structural transition and SDW formation. Low temperature X-ray diffraction measurements have confirmed that the structural transition in these samples occurs near 140 K, compared to a transition temperature of 156 K observed in polycrystalline samples. Isotherms of magnetoresistivity measured as a function of magnetic field can be scaled onto a single curve in which the scaling field is a linear function of temperature between 2.2 K and 180 K.

cond-mat.supr-con↗

Pressure-Induced Unconventional Superconducting Phase in the Topological Insulator Bi2Se3

Simultaneous low-temperature electrical resistivity and Hall effect measurements were performed on single-crystalline Bi2Se3 under applied pressures up to 50 GPa. As a function of pressure, superconductivity is observed to onset above 11 GPa with a transition temperature Tc and upper critical field Hc2 that both increase with pressure up to 30 GPa, where they reach maximum values of 7 K and 4 T, respectively. Upon further pressure increase, Tc remains anomalously constant up to the highest achieved pressure. Conversely, the carrier concentration increases continuously with pressure, including a tenfold increase over the pressure range where Tc remains constant. Together with a quasi-linear temperature dependence of Hc2 that exceeds the orbital and Pauli limits, the anomalously stagnant pressure dependence of Tc points to an unconventional pressure-induced pairing state in Bi2Se3 that is unique among the superconducting topological insulators.

cond-mat.supr-con↗

Ferromagnetic quantum critical point in UCo1-xFexGe

We have carried out a comprehensive study of the UCo1-xFexGe series across the entire range of compositions 0 <= x <= 1, and report the results of x-ray diffraction, magnetization, specific heat, and electrical resistivity to uncover the T-x phase diagram. Substitution of Fe into UCoGe initially results in an increase in the Curie temperature and a rapid destruction of the superconductivity. Near x = 0.22, the ferromagnetic transition is suppressed to zero temperature at an apparent ferromagnetic itinerant electron quantum critical point, where the temperature dependence of the electrical resistivity and specific heat in this region reveal non-Fermi liquid behavior.

cond-mat.str-el↗

High pressure transport properties of the topological insulator Bi2Se3

We report x-ray diffraction, electrical resistivity, and magnetoresistance measurements on Bi2Se3 under high pressure and low temperature conditions. Pressure induces profound changes in both the room temperature value of the electrical resistivity as well as the temperature dependence of the resistivity. Initially, pressure drives Bi2Se3 towards increasingly insulating behavior and then, at higher pressures, the sample appears to enter a fully metallic state coincident with a change in the crystal structure. Within the low pressure phase, Bi2Se3 exhibits an unusual field dependence of the transverse magnetoresistance that is positive at low fields and becomes negative at higher fields. Our results demonstrate that pressures below 8 GPa provide a non-chemical means to controllably reduce the bulk conductivity of Bi2Se3.

cond-mat.mtrl-sci↗

Transport, magnetic, and thermal properties of non-centrosymmetric Yb2Co12P7

We report magnetization and specific heat measurements down to 2 K and electrical resistivity down to millikelvin temperatures on polycrystalline samples of the non-centrosymmetric compound Yb2Co12P7. In addition to the previously reported ferromagnetic ordering of the cobalt sub-lattice at T_C = 136 K we find a magnetic transition below T_M = 5 K that is likely associated with ordering of the Yb ions. The broad nature of the specific heat anomaly suggests disordered magnetism and possible short range correlations well above T_M.

cond-mat.str-el↗

The crystalline lattice of URu_2Si_2 under pressure in the paramagnetic, hidden order, and antiferromagnetic states

X-ray diffraction experiments under pressure in a diamond anvil cell have been performed to gauge any response of the crystalline lattice of URu2Si2 to the "hidden order" or antiferromagnetic transitions, the latter of which is accessible only with applied pressure. The ambient-pressure crystal structure of URu2Si2 persists to high pressure, and structural characterization reveals a reasonably robust crystal lattice with respect to both of the aforementioned temperature-induced electronic transitions. Coupling between the lattice and the "hidden order" transition is reconfirmed to be subtle, and that subtle sensitivity is extended to the antiferromagnetic transition. The pressure-dependent evolution of the lattice parameters indicates a slightly anisotropic compression of the unit cell, which results in a decrease in the lattice c/a ratio with increasing pressure. From compression data, the bulk modulus is estimated to be B_0~190 GPa. While the unit cell volume undergoes compression, the Ru-Si layers separating the U planes evince an apparent "flattening," resulting in a more 2D-like structure and an increased volume per U ion.

cond-mat.str-el↗