arXiv subjects

J. J. Lee

Publications and source records attributed to J. J. Lee.

14 recordsLinked to original sources

arXiv2023

A strongly conservative hybridizable discontinuous Galerkin method for the coupled time-dependent Navier-Stokes and Darcy problem

We present a strongly conservative and pressure-robust hybridizable discontinuous Galerkin method for the coupled time-dependent Navier-Stokes and Darcy problem. We show existence and uniqueness of a solution and present an optimal a priori error analysis for the fully discrete problem when using Backward Euler time stepping. The theoretical results are verified by numerical examples.

math.NA↗

arXiv2017

Electronically driven nematicity in FeSe Films on SrTiO3

The intriguing role of nematicity in iron-based superconductors, defined as broken rotational symmetry below a characteristic temperature, is an intensely investigated contemporary subject. Nematicity is closely connected to the structural transition, however, it is highly doubtful that the lattice degree of freedom is responsible for its formation, given the accumulating evidence for the observed large anisotropy. Here we combine molecular beam epitaxy, angle-resolved photoemission spectroscopy and scanning tunneling microscopy together to study the nematicity in multilayer FeSe films on SrTiO3. Our results demonstrate direct connection between electronic anisotropy in momentum space and standing waves in real space at atomic scale. The lifting of orbital degeneracy of dxz/dyz bands gives rise to a pair of Dirac cone structures near the zone corner, which causes energy-independent unidirectional interference fringes, observed in real space as standing waves by scattering electrons off C2 domain walls and Se-defects. On the other hand, the formation of C2 nematic domain walls unexpectedly shows no correlation with lattice strain pattern, which is induced by the lattice mismatch between the film and substrate. Our results establish a clean case that the nematicity is driven by electronic rather than lattice degrees of freedom in FeSe films.

cond-mat.supr-con↗

arXiv2016

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

cond-mat.mes-hall↗

arXiv2016

Simulations of background sources in AMoRE-I experiment

The first phase of the Advanced Mo-based Rare Process Experiment (AMoRE-I), an experimental search for neutrinoless double beta decay (0$νββ$) of $^{100}$Mo in calcium molybdate (CMO) crystal using cryogenic techniques, is in preparation at the YangYang underground laboratory (Y2L) in South Korea. A GEANT4 based Monte Carlo simulation was performed for background estimation in the first-phase the AMoRE-I detector and shield configuration. Background sources such as $^{238}$U, $^{232}$Th, $^{40}$K, $^{235}$U, and $^{210}$Pb were simulated from inside the crystals, surrounding materials, outer shielding walls of the Y2L cavity. The estimated background rate in the region of interest was found to be $< 1.5 \times 10^{-3}$ counts/keV/kg/yr (ckky). The effects of random coincidences between background and two-neutrino double beta decay of $^{100}$Mo were estimated as a potential background source and its estimated rate was $< 2.3 \times 10^{-4}$ ckky.

physics.ins-det↗

arXiv2015

Superconducting gap anisotropy in monolayer FeSe thin film

Fermi surface topology and pairing symmetry are two pivotal characteristics of a superconductor. Superconductivity in one monolayer (1ML) FeSe thin film has attracted great interest recently due to its intriguing interfacial properties and possibly high superconducting transition temperature (Tc) over 77 K. Here, we report high-resolution measurements of the Fermi surface and superconducting gaps in 1ML FeSe using angle-resolved photoemission spectroscopy (ARPES). Two ellipse-like electron pockets are clearly resolved overlapping with each other at the Brillouin zone corner. The superconducting gap is nodeless but moderately anisotropic, which put strong constraints on determining the pairing symmetry. The gap maxima locate along the major axis of ellipse, which cannot be explained by a single d-wave, extended s-wave, or s$\pm$ gap function. Four gap minima are observed at the intersection of electron pockets suggesting the existence of either a sign change or orbital-dependent pairing in 1ML FeSe.

cond-mat.supr-con↗

arXiv2015

The UWISH2 extended H2 source catalogue

We present the extended source catalogue for the UKIRT Widefield Infrared Survey for H2 (UWISH2). The survey is unbiased along the inner Galactic Plane from l \approx 357deg to l \approx 65deg and |b| < 1.5deg and covers 209 square degrees. A further 42.0 and 35.5 square degrees of high dust column density regions have been targeted in Cygnus and Auriga. We have identified 33200 individual extended H2 features. They have been classified to be associated with about 700 groups of jets and outflows, 284 individual (candidate) Planetary Nebulae, 30 Supernova Remnants and about 1300 Photo-Dissociation Regions. We find a clear decline of star formation activity (traced by H2 emission from jets and photo-dissociation regions) with increasing distance from the Galactic Centre. About 60% of the detected candidate Planetary Nebulae have no known counterpart and 25% of all Supernova Remnants have detectable H2 emission associated with them.

astro-ph.GA↗

arXiv2015

Interfacial mode coupling as the origin of the enhancement of Tc in FeSe films on SrTiO3

Single unit cell films of iron selenide (1UC FeSe) grown on SrTiO3 (STO) substrates have recently shown superconducting energy gaps opening at temperatures close to the boiling point of liquid nitrogen (77 K), a record for iron-based superconductors. Towards understanding why Cooper pairs form at such high temperatures, a primary question to address is the role, if any, of the STO substrate. Here, we report high resolution angle resolved photoemission spectroscopy (ARPES) results which reveal an unexpected and unique characteristic of the 1UC FeSe/STO system: shake-off bands suggesting the presence of bosonic modes, most likely oxygen optical phonons in STO, which couple to the FeSe electrons with only small momentum transfer. Such coupling has the unusual benefit of helping superconductivity in most channels, including those mediated by spin fluctuations. Our calculations suggest such coupling is responsible for raising the superconducting gap opening temperature in 1UC FeSe/STO. This discovery suggests a pathway to engineer high temperature superconductors.

cond-mat.supr-con↗

arXiv2015

Distinctive momentum dependence of the band reconstruction in the nematic state of FeSe thin film

Nematic state, where the system is translationally invariant but breaks the rotational symmetry, has drawn great attentions recently due to experimental observations of such a state in both cuprates and iron-based superconductors. The mechanism of nematicity that is likely tied to the pairing mechanism of high-Tc, however, still remains controversial. Here, we studied the electronic structure of multilayer FeSe film by angle-resolved photoemission spectroscopy (ARPES). We found that the FeSe film enters the nematic state around 125 K, while the electronic signature of long range magnetic order has not been observed down to 20K indicating the non-magnetic origin of the nematicity. The band reconstruction in the nematic state is characterized by the splitting of the dxz and dyz bands. More intriguingly, such energy splitting is strong momentum dependent with the largest band splitting of ~80meV at the zone corner. The simple on-site ferro-orbital ordering is insufficient to reproduce the nontrivial momentum dependence of the band reconstruction. Instead, our results suggest that the nearest-neighbor hopping of dxz and dyz is highly anisotropic in the nematic state, the origin of which holds the key in understanding the nematicity in iron-based superconductors.

cond-mat.supr-con↗

arXiv2014

Asymmetry of collective excitations in electron and hole doped cuprate superconductors

High-temperature superconductivity (HTSC) mysteriously emerges upon doping holes or electrons into insulating copper oxides with antiferromagnetic (AFM) order. It has been thought that the large energy scale of magnetic excitations, compared to phonon energies for example, lies at the heart of an electronically-driven superconducting phase at high temperatures. However, despite extensive studies, little information is available for comparison of high-energy magnetic excitations of hole- and electron-doped superconductors to assess a possible correlation with the respective superconducting transition temperatures. Here, we use resonant inelastic x-ray scattering (RIXS) at the Cu L3-edge to reveal high-energy collective excitations in the archetype electron-doped cuprate Nd2-xCexCuO4 (NCCO). Surprisingly, despite the fact that the spin stiffness is zero and the AFM correlations are short-ranged, magnetic excitations harden significantly across the AFM-HTSC phase boundary, in stark contrast with the hole-doped cuprates. Furthermore, we find an unexpected and highly dispersive mode in superconducting NCCO that is undetected in the hole-doped compounds, which emanates from the zone center with a characteristic energy comparable to the pseudogap, and may signal a quantum phase distinct from superconductivity. The uncovered asymmetry in the high-energy collective excitations with respect to hole and electron doping provides additional constraints for modeling the HTSC cuprates.

cond-mat.supr-con↗

arXiv2013

Charge-orbital-lattice coupling effects in the dd-excitation profile of one dimensional cuprates

We identify dd-excitations in the quasi-one dimensional compound Ca$_2$Y$_2$Cu$_5$O$_{10}$ using resonant inelastic x-ray scattering. By tuning across the Cu L$_3$-edge, we observe abrupt shifts in the dd-peak positions as a function of incident photon energy. This observation demonstrates orbital-specific coupling of the high-energy excited states of the system to the low-energy degrees of freedom. A Franck-Condon treatment of electron-lattice coupling, consistent with other measurements in this compound, reproduces these shifts, explains the Gaussian lineshapes, and highlights charge-orbital-lattice renormalization in the high energy d-manifold.

cond-mat.str-el↗

arXiv2013

Direct Optical Coupling to an Unoccupied Dirac Surface State in the Topological Insulator Bi$_2$Se$_3$

We characterize the occupied and unoccupied electronic structure of the topological insulator Bi$_2$Se$_3$ by one-photon and two-photon angle-resolved photoemission spectroscopy and slab band structure calculations. We reveal a second, unoccupied Dirac surface state with similar electronic structure and physical origin to the well-known topological surface state. This state is energetically located 1.5 eV above the conduction band, which permits it to be directly excited by the output of a Ti:Sapphire laser. This discovery demonstrates the feasibility of direct ultrafast optical coupling to a topologically protected, spin-textured surface state.

cond-mat.mtrl-sci↗

arXiv2012

Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy

We demonstrate the capability of growing high quality ultrathin films of the topological insulators Bi2Se3 and Bi2Te3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band for ultrathin samples, our samples remain intrinsic bulk insulators. We characterize these films using in-situ angle resolved photoemission spectroscopy (ARPES), which is a direct probe of bandstructure, and ex-situ atomic force microscopy. We find that the conduction band lies above the Fermi energy, indicating bulk insulating behavior with only the surface states crossing EF . We conclude that thermal cracking of Te and Se in our growth leads to higher quality thin films, paving the way for future improvements in growth of topological insulators.

cond-mat.mtrl-sci↗

arXiv2012

Room-Temperature Charge Stability Modulated by Quantum Effects in a Nanoscale Silicon Island

We report on transport measurement performed on a room-temperature-operating ultra-small Coulomb blockade devices with a silicon island of sub-5nm. The charge stability at 300K exhibits a substantial change in slopes and diagonal size of each successive Coulomb diamond, but remarkably its main feature persists even at low temperature down to 5.3K except for additional Coulomb peak splitting. This key feature of charge stability with additional fine structures of Coulomb peaks are successfully modeled by including the interplay between Coulomb interaction, valley splitting, and strong quantum confinement, which leads to several low-energy many-body excited states for each dot occupancy. These excited states become enhanced in the sub-5nm ultra-small scale and persist even at 300K in the form of cluster, leading to the substantial modulation of charge stability.

cond-mat.mes-hall↗

arXiv2010

Enhanced Quantum Effects in an Ultra-Small Coulomb Blockaded Device Operating at Room-Temperature

An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated using relatively large devices at ultra-low temperatures, where they give rise to a fine additional structure on the Coulomb oscillations [2-13]. Here, we report transport measurements carried out on a sub-2nm single-electron device; this size is sufficiently small that Coulomb blockade, and other quantum effects, persist up to room temperature (RT). These devices were made by scaling the size of a FinFET structure down to an ultimate limiting form, resulting in the reliable formation of a sub-2nm silicon Coulomb island. Four clear Coulomb diamonds can be observed at RT and the 2nd Coulomb diamond is unusually large, due to quantum confinement. The observed characteristics are successfully modeled on the basis of a very low electron number on the island, combined with Pauli spin exclusion. These effects offer additional functionality for future RT-operating single-electron device applications

cond-mat.mes-hall↗