arXiv subjects

J. K. Nangoi

Publications and source records attributed to J. K. Nangoi.

6 recordsLinked to original sources

arXiv2026

Charge dynamics at nitrogen impurities and nitrogen-vacancy centers in diamond

The nitrogen-vacancy (NV) center in diamond is the prototype quantum defect that enables a variety of diamond-based quantum technologies. However, charge-state instability and spectral diffusion, often induced by substitutional nitrogen impurities (N$_{\rm C}$), remain key challenges for device performance. Here, we employ first-principles density functional theory calculations to quantitatively investigate nonradiative carrier capture processes mediated by multiphonon emission at both the NV center and the N$_{\rm C}$ impurity. For relevant cases, we also compute the rates of radiative and thermal emission processes. For N$_{\rm C}^0$ $\to$ N$_{\rm C}^-$, we obtain an electron capture coefficient of $2.2 \times 10^{-8}$ cm$^3$s$^{-1}$ at 300 K. Both the magnitude and temperature dependence are in excellent agreement with experimentally measured capture cross sections. Electron capture at N$_{\rm C}^+$ is even faster, with a capture coefficient of $1.0 \times 10^{-4}$ cm$^3$s$^{-1}$ at 300 K. For the NV center, we find that carrier capture rates involving only the ground states of NV$^0$ and NV$^-$ are negligibly slow. However, capture into the excited states (NV$^{0*}$ and NV$^{-*}$) is significantly faster. In particular, the capture coefficient for the hole capture process NV$^-$ $\to$ NV$^{0*}$ is as large as $1.8 \times 10^{-7}$ cm$^3$s$^{-1}$ and largely temperature-independent. Hole capture at NV$^-$ will thus occur via nonradiative capture into an excited state of NV$^{0}$ followed by fast radiative decay to the NV$^0$ ground state. Similarly, electron capture at NV$^0$ will occur via the NV$^0$ $\to$ NV$^{-*}$ $\to$ NV$^-$ pathway, but with a lower nonradiative capture coefficient ($2.1 \times 10^{-9}$ cm$^3$s$^{-1}$ at 300 K). Our calculated capture coefficients and rates provide essential information for analyzing charge-state dynamics.

cond-mat.mtrl-sci↗

arXiv2025

A CN complex as an alternative to the T center in Si

We present a first-principles study of a carbon-nitrogen (CN) impurity complex in silicon as an isoelectronic alternative to the T center [(CCH)$_\mathrm{Si}$]. The latter has been pursued for applications in quantum information science, yet its sensitivity to the presence of hydrogen is still problematic. Our proposed complex has no hydrogen, thereby eliminating this issue. First, we show that the CN complex is stable against decomposition into substitutional and interstitial defects. Next, we show that due to being isoelectronic to the T center, the CN complex has a similar electronic structure, and therefore could be used in similar applications. We assess several low-energy configurations of the CN complex, finding (CN)$_\mathrm{Si}$ to be stable and have the largest Debye-Waller factor. We predict a zero-phonon line (ZPL) of 828 meV (in the telecom S-band) and a radiative lifetime of 4.2 $μ$s, comparable to the T center. Due to the presence of a bound exciton, choice of the exchange-correlation functional and also supercell-size scaling of the ZPL and transition dipole moment require special scrutiny; we rigorously justify our extrapolation schemes that allow computing values in the dilute limit.

cond-mat.mtrl-sci↗

arXiv2024

First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi$_2$(111)/Si(111) interfaces

We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(111) and CoSi$_2$(111)/Si(111), we consider various possible interfacial structures, for which we study the relaxations of the atoms near the interface, calculate the formation energies and Schottky barrier heights, and provide estimates of the Josephson critical currents based on the WKB tunneling formalism as implemented in the Simmons/Tsu-Esaki model. We find that the formation energies and SBHs are very similar for all Al(111)/Si(111) structures, yet vary significantly for the CoSi$_2$(111)/Si(111) structures. We attribute this to the more covalent character of bonding at CoSi$_2$/Si, which leads to configurations with distinct atomic and electronic structure. Our estimated Josephson critical currents, which govern the behavior of merged-element transmons, provide insight into the trends as a function of Schottky-barrier height. We show that desirable qubit frequencies of 4-5 GHz can be obtained with a Si barrier thickness of about 5-10 nm, and demonstrate that the critical current density as a function of Schottky barrier height can be modeled based on the tunneling probability for a rectangular barrier.

cond-mat.mtrl-sci↗

arXiv2023

Atomically smooth films of CsSb: a chemically robust visible light photocathode

Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and contamination, must be overcome. By exploring the growth of CsxSb thin films monitored by in situ electron diffraction, the conditions to reproducibly synthesize atomically smooth films of CsSb on 3C-SiC (100) and graphene coated TiO2 (110) substrates are identified, and detailed structural, morphological, and electronic characterization is presented. These films combine high quantum efficiency in the visible (up to 1.2% at 400 nm), an easily accessible photoemission threshold of 550 nm, low surface roughness (down to 600 pm on a 1 um scale), and a robustness against oxidation up to 15 times greater then Cs3Sb. These properties suggest that CsSb has the potential to operate as an alternative to Cs$_3$Sb in electron source applications where the demands of the vacuum environment might otherwise preclude the use of traditional alkali antimonides.

physics.acc-ph↗

arXiv2022

Ab initio study of the crystal and electronic structure of mono- and bi-alkali antimonides: Stability, Goldschmidt-like tolerance factors, and optical properties

Mono- and bi-alkali antimonides, X$_2$YSb (X and Y from Group I), are promising for next-generation electron emitters due to their capability of producing high-quality electron beams. However, these materials are not yet well understood, in part due to the technical challenges in growing pure, ordered alkali antimonides. For example, in the current literature there is a lack of complete understanding of the mechanically stable crystal structures of these materials. As a first step towards understanding this issue, this paper presents an ab initio study of stability of single-crystal mono- and bi-alkali antimonides in the $D0_3$ structure, the structure generally assumed in the literature for these materials. Finding that many of these materials actually are unstable in the $D0_3$ structure, we formulate a new set of Goldschmidt-like tolerance factors that accurately predict $D0_3$ stability using a procedure analogous to machine-learning perceptron-based analysis. Next, we consider possible stable structures for materials that we predict to be unstable in the $D0_3$ structure. Taking as examples the mono- and bi-alkali antimonides Cs$_3$Sb and Cs$_2$KSb, which also are technologically interesting for photoemission and photoabsorption applications, respectively, we note that the most unstable phonon displacements are consistent with the cubic structure, and we therefore perform extensive ab initio searches to identify potential ground-state structures in a cubic lattice. Our X-ray diffraction experiments confirm that indeed these two materials are not stable in the $D0_3$ structure and show scattering that is consistent with our new, proposed stable structures. Finally, we explore ab initio the implications of the breaking of the $D0_3$ symmetry on the electronic structure, showing significant impact on the location of the optical absorption edge.

cond-mat.mtrl-sci↗

arXiv2021

A single-crystal alkali antimonide photocathode: high efficiency in the ultra-thin limit

The properties of photoemission electron sources determine the ultimate performance of a wide class of electron accelerators and photon detectors. To date, all high-efficiency visible-light photocathode materials are either polycrystalline or exhibit intrinsic surface disorder, both of which limit emitted electron beam brightness. In this letter we demonstrate the synthesis of epitaxial thin films of Cs$_3$Sb on 3C-SiC (001) using molecular-beam epitaxy. Films as thin as 4 nm have quantum efficiencies exceeding 2\% at 532 nm. We also find that epitaxial films have an order of magnitude larger quantum efficiency at 650 nm than comparable polycrystalline films on Si. Additionally, these films permit angle-resolved photoemission spectroscopy measurements of the electronic structure, which are found to be in good agreement with theory. Epitaxial films open the door to dramatic brightness enhancements via increased efficiency near threshold, reduced surface disorder, and the possibility of engineering new photoemission functionality at the level of single atomic layers.

physics.acc-ph↗