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J. Kudrnovsky

Publications and source records attributed to J. Kudrnovsky.

At least 19 recordsLinked to original sources

Tetragonal CuMnAs alloy: role of defects

The antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure is a promising material for the AFM spintronics. The resistivity measurements indicate the presence of defects about whose types and concentrations is more speculated as known. We confirmed vacancies on Mn or Cu sublattices and Mn$_{\rm Cu}$ and Cu$_{\rm Mn}$ antisites as most probable defects in CuMnAs by our new ab initio total energy calculations. We have estimated resistivities of possible defect types as well as resistivities of samples for which the X-ray structural analysis is available. In the latter case we have found that samples with Cu- and Mn-vacancies with low formation energies have also resistivities which agree well with the experiment. Finally, we have also calculated exchange interactions and estimated the Néel temperatures by using the Monte Carlo approach. A good agreement with experiment was obtained.

cond-mat.mtrl-sci

Defect-induced magnetic structure of CuMnSb

Ab initio total energy calculations show that the antiferromagnetic (111) order is not the ground state for the ideal CuMnSb Heusler alloy in contrast to the results of neutron diffraction experiments. It is known, that Heusler alloys usually contain various defects depending on the sample preparation. We have therefore investigated magnetic phases of CuMnSb assuming the most common defects which exist in real experimental conditions. The full-potential supercell approach and a Heisenberg model approach using the coherent potential approximation are adopted. The results of the total energy supercell calculations indicate that defects that bring Mn atoms close together promote the antiferromagnetic (111) structure already for a low critical defect concentrations ($\approx$ 3%). A detailed study of exchange interactions between Mn-moments further supports the above stabilization mechanism. Finally, the stability of the antiferromagnetic (111) order is enhanced by inclusion of electron correlations in narrow Mn-bands. The present refinement structure analysis of neutron scattering experiment supports theoretical conclusions.

cond-mat.mtrl-sci

Pressure dependence of Curie temperature and resistivity in complex Heusler alloys

Using first-principles electronic structure calculations, we have studied the dependence of the Curie temperature on external hydrostatic pressure for random Ni2MnSn Heusler alloys doped with Cu and Pd atoms, over the entire range of dopant concentrations. The Curie temperatures are calculated by applying random-phase approximation to the Heisenberg Hamiltonian whose parameters are determined using the linear response and multiple scattering methods, based on density-functional theory. In (Ni1-x,Pdx)2MnSn alloys, the Curie temperature is found to increase with applied pressure over the whole concentration range. The crossover from the increase to the decrease of the Curie temperature with pressure takes place for Cu concentrations larger than about 70% in (Ni1-x,Cux)2MnSn Heusler alloys. The results for the reference Ni2MnSn Heusler alloy agree well with a previous theoretical study of E. Sasioglu, L. M. Sandratskii and P. Bruno Phys. Rev. B 71 214412 (2005) and also reasonably well with available experimental data. Results for the spin-disorder-induced part of the resistivity in (Ni1-x,Pdx)2MnSn Heusler alloys, calculated by using the disordered local moment model, are also presented. Finally, a qualitative understanding of the results, based on Anderson's superexchange interaction and Stearn's model of the indirect exchange interaction between localized and itinerant d electrons, is provided.

cond-mat.mtrl-sci

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As.

cond-mat.mtrl-sci

Relation of Curie temperature and conductivity: (Ga,Mn)As alloy as a case study

Experimental investigations of diluted magnetic semiconductors indicate a strong relation between Curie temperature and conductivity. Both quantities depend non trivially on the concentration of magnetic impurities, the carrier density, and the presence of compensating defects. We calculate both Curie temperature and conductivity of (Ga,Mn)As alloys in a selfconsistent manner based on the same first principles Hamiltonian in which the presence of compensating defects is taken into account. The effect of As-antisites and Mn-interstitials is determined separately and a good agreement between theory and experiment exists only in the case where the dominating mechanism of is due to the Mn-interstitials.

cond-mat.dis-nn

Magnetic order of FeMn alloy on the W(001) surface

We investigate theoretically the ground state of the FeMn binary alloy monolayer on the W(001) surface, the stability of different magnetic configurations (ferro/antiferromagnetic, disordered local moments, etc.) and estimate concentrations at which a transition occurs between different magnetic orders. The tight-binding linear muffin-tin orbital method combined with the coherent potential approximation is used to treat the surface alloy appropriately. We discuss the role of disorder on the phase transitions in surface alloys composed from two different 3d transition metals.

cond-mat.mtrl-sci

Chemical ordering and composition fluctuations at the (001) surface of the Fe-Ni Invar alloy

We report on a study of (001) oriented fcc Fe-Ni alloy surfaces which combines first-principles calculations and low-temperature STM experiments. Density functional theory calculations show that Fe-Ni alloy surfaces are buckled with the Fe atoms slightly shifted outwards and the Ni atoms inwards. This is consistent with the observation that the atoms in the surface layer can be chemically distinguished in the STM image: brighter spots (corrugation maxima with increased apparent height) indicate iron atoms, darker ones nickel atoms. This chemical contrast reveals a c2x2 chemical order (50% Fe) with frequent Fe-rich defects on Invar alloy surface. The calculations also indicate that subsurface composition fluctuations may additionally modulate the apparent height of the surface atoms. The STM images show that this effect is pronounced compared to the surfaces of other disordered alloys, which suggests that some chemical order and corresponding concentration fluctuations exist also in the subsurface layers of Invar alloy. In addition, detailed electronic structure calculations allow us to identify the nature of a distinct peak below the Fermi level observed in the tunneling spectra. This peak corresponds to a surface resonance band which is particularly pronounced in iron-rich surface regions and provides a second type of chemical contrast with less spatial resolution but one that is essentially independent of the subsurface composition.

cond-mat.mtrl-sci

Magnetism of 3d transition metal atoms on W(001): submonolayer films

We have investigated random submonolayer films of 3d transition metals on W(001). The tight-binding linear muffin-tin orbital method combined with the coherent potential approximation was employed to calculate the electronic structure of the films. We have estimated local magnetic moments and the stability of different magnetic structures, namely the ferromagnetic order, the disordered local moments and the non-magnetic state, by comparing the total energies of the corresponding systems. It has been found that the magnetic moments of V and Cr decrease and eventually disappear with decreasing coverage. On the other hand, Fe retains approximately the same magnetic moment throughout the whole concentration range from a single impurity to the monolayer coverage. Mn is an intermediate case between Cr and Fe since it is non-magnetic at very low coverages and ferromagnetic otherwise.

cond-mat.mtrl-sci

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP or (Al,Ga)As which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn)(As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

cond-mat.mtrl-sci

Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As

We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include unlimited solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by detail ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the microscopic physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.

cond-mat.mtrl-sci

Dynamical correlations in multiorbital Hubbard models: Fluctuation-exchange approximations

We study the two band degenerate Hubbard model using the Fluctuation Exchange approximation (FLEX) method and compare the results with Quantum Monte-Carlo calculations. Both the self-consistent and the non-self-consistent versions of the FLEX scheme are investigated. We find that, contrary to the one band case, in the multiband case, good agreement with the Quantum Monte-Carlo results is obtained within the electron-electron T-matrix approximation using the full renormalization of the one-particle propagators. The crossover to strong coupling and the formation of satellites is more clearly visible in the non-self-consistent scheme. Finally we discuss the behavior of the FLEX for higher orbital degeneracy.

cond-mat.str-el

Compositional Dependence of Formation Energies of Substitutional and Interstitial Mn in Partially Compensated (Ga,Mn)As

We use the density-functional theory to calculate the total energy of mixed crystals (Ga,Mn)As with a small concentration of various donors. We find that the formation energy of Mn depends strongly on the partial concentrations of Mn in the substitutional and interstitial positions, and on the concentration of other dopants. The composition dependence of the formation energies represents an effective feedback mechanism, resulting in the self-compensation property of (Ga,Mn)As. We show that the partial concentrations of both substitutional and interstitial Mn increase proportionally to the total concentration of Mn.

cond-mat.mtrl-sci

Ab initio study of Curie temperatures of diluted III-V magnetic semiconductors

The electronic structure of diluted (Ga,Mn)As magnetic semiconductors in the presence of As-antisites and magnetic disorder is studied within the framework of the local spin density approximation. Both the chemical and magnetic disorders are treated using the coherent potential approximation. A ground state with partial disorder in the local moments and with a reduced total magnetic moment appears in the presence of As-antisites. We first estimate the Curie temperature T_c from total energy differences between the ferromagnetic and the paramagnetic state by identifying these with the corresponding energy difference in a classical Heisenberg model. A more systematic approach within the framework of the mean-field approximation to estimate T_c consists in an evaluation of the effective exchange fields acting on the magnetic moment at a given site. The presence of As-antisites strongly reduces the Curie temperature. The results indicate that the effect of impurities on the electronic structure cannot be neglected and influences the Curie temperature non-negligibly. A comparison of the calculated Curie temperatures to existing experimental data indicates an increase of the donor concentration with the increase of the Mn-content.

cond-mat.mtrl-sci

Correlated Doping in Semiconductors: The Role of Donors in III-V Diluted Magnetic Semiconductors

We investigate the compositional dependence of the total energy of the mixed crystals (Ga,Mn)As co-doped with As, Sn, and Zn. Using the ab initio LMTO-CPA method we find a correlation between the incorporation of acceptors (Mn, Zn) and donors (Sn, antisite As). In particular, the formation energy of As_Ga is reduced by approx. 0.1 eV in the presence of Mn, and vice versa. This leads to the self-compensating behavior of (Ga,Mn)As.

cond-mat.mtrl-sci

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

We use the density-functional calculations to investigate the compositional dependence of the lattice constant of (Ga,Mn)As containing various native defects. The lattice constant of perfect mixed crystals does not depend much on the concentration of Mn. The lattice parameter increases if some Mn atoms occupy interstitial positions. The same happens if As antisite defects are present. A quantitative agreement with the observed compositional dependence is obtained for materials close to a complete compensation due to these two donors. The increase of the lattice constant of (Ga,Mn)As is correlated with the degree of compensation: the materials with low compensation should have lattice constants close to the lattice constant of GaAs crystal.

cond-mat.mtrl-sci

Disorder effects in diluted ferromagnetic semiconductors

Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then using a generalized RKKY formula we evaluate the Mn-Mn long-range exchange integrals and the Curie temperature as a function of the exchange parameter, magnetic impurity concentration and carrier density. The effect of the disorder (impurity scattering) appears to play a crucial role. The standard RKKY calculation (no scattering processes), strongly underestimate the Curie temperature and is inappropriate to describe magnetism in diluted magnetic semi-conductors. It is also shown that an antiferromagnetic exchange favors higher Curie temperature.

cond-mat.dis-nn

Dynamical electron correlations in metals: TB-LMTO and multiband Hubbard Hamiltonian

We study electronic properties of solids with correlated d electrons which could be described by a multiband Hubbard Hamiltonian in the weak-interaction case, $U/w<1$. The one-electron part of the many-body Hamiltonian is described by a tight-binding LMTO method. The many-body part is treated by non-selfconsistent FLEX-type approximations with adjusted chemical potential not to change the LMTO band filling. The calculated DOS gets narrower but is only little influenced by electron correlations at the Fermi energy. A precursor of a satellite band in the paramagnetic bcc Ni is found at about 6 eV below the Fermi level in agreement with experiment.

cond-mat.str-el

Adlayer core-level shifts of random metal overlayers on transition-metal substrates

We calculate the difference of the ionization energies of a core-electron of a surface alloy, i.e., a B-atom in a A_(1-x) B_x overlayer on a fcc-B(001)-substrate, and a core-electron of the clean fcc-B(001) surface using density-functional-theory. We analyze the initial-state contributions and the screening effects induced by the core hole, and study the influence of the alloy composition for a number of noble metal-transition metal systems. Data are presented for Cu_(1-x)Pd_x/Pd(001), Ag_(1-x) Pd_x/Pd(001), Pd_(1-x) Cu_x/Cu(001), and Pd_(1-x) Ag_x/Ag(001), changing x from 0 to 100 %. Our analysis clearly indicates the importance of final-state screening effects for the interpretation of measured core-level shifts. Calculated deviations from the initial-state trends are explained in terms of the change of inter- and intra-atomic screening upon alloying. A possible role of alloying on the chemical reactivity of metal surfaces is discussed.

cond-mat.mtrl-sci